X-On Electronics has gained recognition as a prominent supplier of DMA204010R Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. DMA204010R Bipolar Transistors - BJT are a product manufactured by Panasonic. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

DMA204010R Panasonic

DMA204010R electronic component of Panasonic
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Part No.DMA204010R
Manufacturer: Panasonic
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT COMPOSITE TRANSISTOR GL WNG 2.9x2.8mm
Datasheet: DMA204010R Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 0.9821
10 : USD 0.6527
100 : USD 0.1946
500 : USD 0.1745
1000 : USD 0.1302
3000 : USD 0.1111
9000 : USD 0.1086
24000 : USD 0.1025
45000 : USD 0.0976
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Collector- Emitter Voltage VCEO Max
Gain Bandwidth Product fT
Maximum Operating Temperature
Packaging
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the DMA204010R from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DMA204010R and other electronic components in the Bipolar Transistors - BJT category and beyond.

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DMA20401 Unit: mm Silicon PNP epitaxial planar type For general amplication Features High forward current transfer ratio h with excellent linearity FE Low collector-emitter saturation voltage V CE(sat) Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) Marking Symbol: A7 Basic Part Number Dual DSA2001 (Individual) 1: Emitter (Tr1) 4: Emitter (Tr2) 2: Base (Tr1) 5: Base (Tr2) Packaging 3: Collector (Tr2) 6: Collector (Tr1) DMA204010R Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard) Panasonic Mini6-G4-B JEITA SC-74 Absolute Maximum Ratings T = 25C a Code SOT-457 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) V 60 V CBO (C1) (B2) (E2) 6 5 4 Collector-emitter voltage (Base open) V 50 V CEO Tr1 Emitter-base voltage (Collector open) V 7 V EBO Tr2 Tr1 Tr2 Collector current I 100 mA C Peak collector current I 200 mA CP 1 2 3 (E1) (B1) (C2) Total power dissipation P 300 mW T Junction temperature T 150 C j Overall Operating ambient temperature T 40 to +85 C opr Storage temperature T 55 to +150 C stg Electrical Characteristics T = 25C3C a Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V I = 10 A, I = 0 60 V CBO C E Collector-emitter voltage (Base open) V I = 2 mA, I = 0 50 V CEO C B Emitter-base voltage (Collector open) V I = 10 A, I = 0 7 V EBO E C Collector-base cutoff current (Emitter open) I V = 20 V, I = 0 0.1 A CBO CB E Collector-emitter cutoff current (Base open) I V = 10 V, I = 0 100 A CEO CE B Forward current transfer ratio h V = 10 V, I = 2 mA 210 460 FE CE C Collector-emitter saturation voltage V I = 100 mA, I = 10 mA 0.2 0.5 V CE(sat) C B Transition frequency f V = 10 V, I = 2 mA 150 MHz T CE C Collector output capacitance C V = 10 V, I = 0, f = 1 MHz 2 pF ob CB E (Common base, input open circuited) Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Publication date: December 2013 Ver. DED 1DMA20401 DMA20401 IC-VCE DMA20401 hFE-IC DMA20401 PT-Ta P T I V h I T a C CE FE C 120 600 400 V = 10 V T = 25C CE a I = 600 A B 100 500 300 500 A 80 400 T = 85C a 400 A 200 60 300 300 A 25C 40 200 200 A 40C 100 20 100 A 100 0 0 0 0 2 4 6 8 10 12 0.1 1 10 100 0 40 80 120 160 200 ( ) Ambient temperature T C Collector-emitter voltage V (V) Collector current I (mA) a CE C DMA20401 VCEsat-IC DMA20401 IC-VBE DMA20401 Cob-VCB V I I V C V CE(sat) C C BE ob CB 10 120 I / I = 10 V = 10 V C B CE I = 0 E f =1 MHz 4.0 25C 100 T = 25C a T = 85C a 1 80 3.0 40C 60 2.0 0.1 40 T = 85C a 1.0 40C 20 25C 0.01 0 0 0.1 1 10 100 0 0.4 0.8 1.2 1 10 100 Collector current I (mA) Base-emitter voltage V (V) Collector-base voltage V (V) C BE CB DMA20401 fT-IC f I T C 250 V = 10 V CE T = 25C a 200 150 100 50 0 0.1 1 10 100 Collector current I (mA) C Ver. DED 2 Transition frequency f (MHz) Collector-emitter saturation voltage V (V) ( ) Total power dissipation P mW T CE(sat) T Collector current I (mA) Collector current I (mA) C C Collector output capacitance Forward current transfer ratio h C (pF) FE ob (Common base, input open circuited)

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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