DMA204A0 Unit: mm Silicon PNP epitaxial planar type For low frequency amplication Features Low collector-emitter saturation voltage V CE(sat) Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) Marking Symbol: C0 Basic Part Number Dual DSA2401 (Individual) Packaging 1: Emitter (Tr1) 4: Emitter (Tr2) DMA204A00R Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard) 2: Base (Tr1) 5: Base (Tr2) 3: Collector (Tr2) 6: Collector (Tr1) Absolute Maximum Ratings T = 25C a Panasonic Mini6-G4-B JEITA SC-74 Parameter Symbol Rating Unit Code SOT-457 Collector-base voltage (Emitter open) V 15 V CBO Collector-emitter voltage (Base open) V 10 V CEO (C1) (B2) (E2) Tr1 6 5 4 Emitter-base voltage (Collector open) V 7 V EBO Tr2 Collector current I 0.5 A C Tr1 Tr2 Peak collector current I 1 A CP Total power dissipation P 300 mW T 1 2 3 Junction temperature T 150 C (E1) (B1) (C2) j Overall Operating ambient temperature T 40 to +85 C opr Storage temperature T 55 to +150 C stg Electrical Characteristics T = 25C3C a Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V I = 10 A, I = 0 15 V CBO C E Collector-emitter voltage (Base open) V I = 1 mA, I = 0 10 V CEO C B Emitter-base voltage (Collector open) V I = 10 A, I = 0 7 V EBO E C Collector-base cutoff current (Emitter open) I V = 10 V, I = 0 100 nA CBO CB E h V = 2 V, I = 0.5 A 130 350 FE1 CE C 1 * Forward current transfer ratio h V = 2 V, I = 1 A 60 FE2 CE C 1 * Collector-emitter saturation voltage V I = 0.4 A, I = 8 mA 0.15 0.30 V CE(sat) C B 1 * Base-emitter saturation voltage V I = 0.4 A, I = 8 mA 0.8 1.2 V BE(sat) C B Transition frequency f V = 10 V, I = 50 mA 250 MHz T CE C Collector output capacitance C V = 10 V, I = 0, f = 1 MHz 18 pF ob CB E (Common base, input open circuited) Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. 1: Pulse measurement * Publication date: December 2013 Ver. CED 1DMA204A0 DMA204A0 PT-Ta DMA204A0 IC-VCE DMA204A0 hFE-IC P T I V h I T a C CE FE C 400 600 600 V = 2 V T = 25C CE a 1.8 mA 1.6 mA 500 500 I = 2.0 mA 1.4 mA B 300 T = 85C a 1.2 mA 400 400 1.0 mA 25C 0.8 mA 200 300 300 0.6 mA 40C 200 200 0.4 mA 100 0.2 mA 100 100 0 0 0 2 3 0 40 80 120 160 200 0 2 4 6 8 10 12 1 10 10 10 Ambient temperature T (C) Collector-emitter voltage V (V) Collector current I (mA) a CE C DMA204A0 VCEsat-IC DMA204A0 IC-VBE DMA204A0 Cob-VCB V I I V C V CE(sat) C C BE ob CB 10 500 60 I = 0 I / I = 50 E C B f = 1 MHz V = 2 V CE T = 25C a 50 400 25C 1 T = 85C 40 a 300 30 40C 200 T = 85C a 0.1 20 25C 100 10 40C 0 0.01 0 2 3 0 0.4 0.8 1.2 1 10 10 10 1 10 100 Collector current I (mA) Base-emitter voltage V (V) Collector-base voltage V (V) C BE CB DMA204A0 fT-IC DMA204A0 VBEsat-IC f I V I T C BE(sat) C 10 300 I / I = 50 C B V = 10 V CE T = 25C a 250 25C 40C 200 1 T = 85C a 150 100 0.1 50 0 0.01 2 3 0.1 1 10 100 1 10 10 10 Collector current I (mA) Collector current I (mA) C C Ver. CED 2 Collector-emitter saturation voltage V (V) Total power dissipation P (mW) Transition frequency f (MHz) CE(sat) T T Base-emitter saturation voltage V (V) Collector current I (mA) Collector current I (mA) BE(sat) C C Collector output capacitance C (pF) Forward current transfer ratio h ob FE (Common base, input open circuited)