DMA206010R Panasonic

DMA20601 Unit: mm Silicon PNP epitaxial planar type For general amplication Features High forward current transfer ratio h with excellent linearity FE Low collector-emitter saturation voltage V CE(sat) Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) Marking Symbol: B2 Basic Part Number Dual DSA2001 (Individual) 1: Emitter (Tr1) 4: Collector (Tr2) Packaging 2: Emitter (Tr2) 5: Base (Tr1) DMA206010R Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard) 3: Base (Tr2) 6: Collector (Tr1) Panasonic Mini6-G4-B Absolute Maximum Ratings T = 25C a JEITA SC-74 Parameter Symbol Rating Unit Code SOT-457 Collector-base voltage (Emitter open) V 60 V CBO Collector-emitter voltage (Base open) V 50 V CEO (C1) (B1) (C2) 6 5 4 Tr1 Emitter-base voltage (Collector open) V 7 V EBO Tr2 Collector current I 100 mA Tr2 C Tr1 Peak collector current I 200 mA CP Total power dissipation P 300 mW T 1 2 3 (E1) (E2) (B2) Junction temperature T 150 C j Overall Operating ambient temperature T 40 to +85 C opr Storage temperature T 55 to +150 C stg Electrical Characteristics T = 25C3C a Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V I = 10 A, I = 0 60 V CBO C E Collector-emitter voltage (Base open) V I = 2 mA, I = 0 50 V CEO C B Emitter-base voltage (Collector open) V I = 10 A, I = 0 7 V EBO E C Collector-base cutoff current (Emitter open) I V = 20 V, I = 0 0.1 A CBO CB E Collector-emitter cutoff current (Base open) I V = 10 V, I = 0 100 A CEO CE B Forward current transfer ratio h V = 10 V, I = 2 mA 210 460 FE CE C h 1 * FE h ratio V = 10 V, I = 2 mA 0.50 0.99 FE CE C (Small/Large) Collector-emitter saturation voltage V I = 100 mA, I = 10 mA 0.2 0.5 V CE(sat) C B Transition frequency f V = 10 V, I = 2 mA 150 MHz T CE C Collector output capacitance C V = 10 V, I = 0, f = 1 MHz 2 pF ob CB E (Common base, input open circuited) Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. 1: Ratio between 2 elements * Publication date: December 2013 Ver. DED 1DMA20601 DMA20601 IC-VCE DMA20601 hFE-IC DMA20601 PT-Ta P T I V h I T a C CE FE C 120 600 400 V = 10 V T = 25C CE a I = 600 A B 100 500 300 500 A 80 400 T = 85C a 400 A 200 60 300 300 A 25C 40 200 200 A 40C 100 20 100 A 100 0 0 0 0 2 4 6 8 10 12 0.1 1 10 100 0 40 80 120 160 200 ( ) Ambient temperature T C Collector-emitter voltage V (V) Collector current I (mA) a CE C DMA20601 VCEsat-IC DMA20601 IC-VBE DMA20601 Cob-VCB V I I V C V CE(sat) C C BE ob CB 10 120 I / I = 10 V = 10 V C B CE I = 0 E f =1 MHz 4.0 25C 100 T = 25C a T = 85C a 1 80 3.0 40C 60 2.0 0.1 40 T = 85C a 1.0 40C 20 25C 0.01 0 0 0.1 1 10 100 0 0.4 0.8 1.2 1 10 100 Collector current I (mA) Base-emitter voltage V (V) Collector-base voltage V (V) C BE CB DMA20601 fT-IC f I T C 250 V = 10 V CE T = 25C a 200 150 100 50 0 0.1 1 10 100 Collector current I (mA) C Ver. DED 2 Transition frequency f (MHz) Collector-emitter saturation voltage V (V) ( ) Total power dissipation P mW T CE(sat) T Collector current I (mA) Collector current I (mA) C C Collector output capacitance Forward current transfer ratio h C (pF) FE ob (Common base, input open circuited)