DSA2401 Silicon PNP epitaxial planar type For low frequency amplication Unit: mm Features Low collector-emitter saturation voltage V CE(sat) Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) Marking Symbol: B1 Packaging DSA24010L Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard) Absolute Maximum Ratings T = 25C a Parameter Symbol Rating Unit Collector-base voltage (Emitter open) V 15 V CBO 1: Base Collector-emitter voltage (Base open) V 10 V CEO 2: Emitter Emitter-base voltage (Collector open) V 7 V EBO 3: Collector Panasonic Mini3-G3-B-B Collector current I 0.5 A C JEITA SC-59A Peak collector current I 1 A CP Code TO-236AA/SOT-23 Collector power dissipation P 200 mW C Junction temperature T 150 C j Operating ambient temperature T 40 to +85 C opr Storage temperature T 55 to +150 C stg Electrical Characteristics T = 25C3C a Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V I = 10 mA, I = 0 15 V CBO C E Collector-emitter voltage (Base open) V I = 1 mA, I = 0 10 V CEO C B Emitter-base voltage (Collector open) V I = 10 mA, I = 0 7 V EBO E C Collector-base cutoff current (Emitter open) I V = 10 V, I = 0 100 nA CBO CB E 2 * h V = 2 V, I = 0.5 A 130 350 FE1 CE C 1 * Forward current transfer ratio h V = 2 V, I = 1 A 60 FE2 CE C 1 * Collector-emitter saturation voltage V I = 0.4 A, I = 8 mA 0.15 0.30 V CE(sat) C B 1 * Base-emitter saturation voltage V I = 0.4 A, I = 8 mA 0.8 1.2 V BE(sat) C B Transition frequency f V = 10 V, I = 50 mA 250 MHz T CE C Collector output capacitance C V = 10 V, I = 0, f = 1 MHz 18 pF ob CB E (Common base, input open circuited) Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. 1: Pulse measurement * 2: Rank classication * Code R S Rank R S h 130 to 220 180 to 350 FE1 Marking Symbol B1R B1S Publication date: February 2014 Ver. BED 1DSA2401 DSA2401 hFE-IC DSA2401 PC-Ta DSA2401 IC-VCE P T I V h I C a C CE FE C 250 600 600 T = 25C a V = 2 V CE 500 500 I = 1.4 mA 200 B T = 85C a 1.2 mA 400 400 1.0 mA 150 25C 0.8 mA 300 300 0.6 mA 100 40C 200 200 0.4 mA 50 100 100 0.2 mA 0 0 0 2 3 0 40 80 120 160 200 0 2 4 6 8 10 12 1 10 10 10 ( ) Ambient temperature T C Collector-emitter voltage V (V) Collector current I (mA) a CE C DSA2401 VCEsat-IC DSA2401 IC-VBE DSA2401 Cob-VCB V I I V C V CE(sat) C C BE ob CB 10 50 500 I / I = 50 V = 2 V I = 0 C B CE E f =1 MHz T = 25C 25C a 400 40 T = 85C a 1 300 30 40C 200 20 T = 85C a 1 10 100 10 40C 25C 2 10 0 0 2 3 1 10 10 10 0 0.4 0.8 1.2 1 10 100 Collector current I (mA) Base-emitter voltage V (V) Collector-base voltage V (V) C BE CB DSA2401 fT-IC DSA2401 VBEsat-IC f I V I T C BE(sat) C 300 10 I / I = 50 C B V = 10 V CE T = 25C a 250 40C 200 1 T = 85C a 150 25C 1 100 10 50 2 0 10 2 3 0.1 1 10 100 1 10 10 10 Collector current I (mA) Collector current I (mA) C C Ver. BED 2 Transition frequency f (MHz) Collector-emitter saturation voltage V (V) ( ) Collector power dissipation P mW T CE(sat) C Collector current I (mA) Base-emitter saturation voltage V (V) Collector current I (mA) C BE(sat) C Collector output capacitance Forward current transfer ratio h C (pF) FE ob (Common base, input open circuited)