X-On Electronics has gained recognition as a prominent supplier of DSA2401S0L Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. DSA2401S0L Bipolar Transistors - BJT are a product manufactured by Panasonic. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

DSA2401S0L Panasonic

DSA2401S0L electronic component of Panasonic
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Part No.DSA2401S0L
Manufacturer: Panasonic
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT SM SIG TRANS GL WNG 2.9x2.8mm
Datasheet: DSA2401S0L Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 0.7254
10 : USD 0.6024
100 : USD 0.4497
500 : USD 0.3533
N/A

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Collector- Emitter Voltage VCEO Max
Gain Bandwidth Product fT
Maximum Operating Temperature
Packaging
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the DSA2401S0L from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DSA2401S0L and other electronic components in the Bipolar Transistors - BJT category and beyond.

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DSA2401 Silicon PNP epitaxial planar type For low frequency amplication Unit: mm Features Low collector-emitter saturation voltage V CE(sat) Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) Marking Symbol: B1 Packaging DSA24010L Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard) Absolute Maximum Ratings T = 25C a Parameter Symbol Rating Unit Collector-base voltage (Emitter open) V 15 V CBO 1: Base Collector-emitter voltage (Base open) V 10 V CEO 2: Emitter Emitter-base voltage (Collector open) V 7 V EBO 3: Collector Panasonic Mini3-G3-B-B Collector current I 0.5 A C JEITA SC-59A Peak collector current I 1 A CP Code TO-236AA/SOT-23 Collector power dissipation P 200 mW C Junction temperature T 150 C j Operating ambient temperature T 40 to +85 C opr Storage temperature T 55 to +150 C stg Electrical Characteristics T = 25C3C a Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V I = 10 mA, I = 0 15 V CBO C E Collector-emitter voltage (Base open) V I = 1 mA, I = 0 10 V CEO C B Emitter-base voltage (Collector open) V I = 10 mA, I = 0 7 V EBO E C Collector-base cutoff current (Emitter open) I V = 10 V, I = 0 100 nA CBO CB E 2 * h V = 2 V, I = 0.5 A 130 350 FE1 CE C 1 * Forward current transfer ratio h V = 2 V, I = 1 A 60 FE2 CE C 1 * Collector-emitter saturation voltage V I = 0.4 A, I = 8 mA 0.15 0.30 V CE(sat) C B 1 * Base-emitter saturation voltage V I = 0.4 A, I = 8 mA 0.8 1.2 V BE(sat) C B Transition frequency f V = 10 V, I = 50 mA 250 MHz T CE C Collector output capacitance C V = 10 V, I = 0, f = 1 MHz 18 pF ob CB E (Common base, input open circuited) Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. 1: Pulse measurement * 2: Rank classication * Code R S Rank R S h 130 to 220 180 to 350 FE1 Marking Symbol B1R B1S Publication date: February 2014 Ver. BED 1DSA2401 DSA2401 hFE-IC DSA2401 PC-Ta DSA2401 IC-VCE P T I V h I C a C CE FE C 250 600 600 T = 25C a V = 2 V CE 500 500 I = 1.4 mA 200 B T = 85C a 1.2 mA 400 400 1.0 mA 150 25C 0.8 mA 300 300 0.6 mA 100 40C 200 200 0.4 mA 50 100 100 0.2 mA 0 0 0 2 3 0 40 80 120 160 200 0 2 4 6 8 10 12 1 10 10 10 ( ) Ambient temperature T C Collector-emitter voltage V (V) Collector current I (mA) a CE C DSA2401 VCEsat-IC DSA2401 IC-VBE DSA2401 Cob-VCB V I I V C V CE(sat) C C BE ob CB 10 50 500 I / I = 50 V = 2 V I = 0 C B CE E f =1 MHz T = 25C 25C a 400 40 T = 85C a 1 300 30 40C 200 20 T = 85C a 1 10 100 10 40C 25C 2 10 0 0 2 3 1 10 10 10 0 0.4 0.8 1.2 1 10 100 Collector current I (mA) Base-emitter voltage V (V) Collector-base voltage V (V) C BE CB DSA2401 fT-IC DSA2401 VBEsat-IC f I V I T C BE(sat) C 300 10 I / I = 50 C B V = 10 V CE T = 25C a 250 40C 200 1 T = 85C a 150 25C 1 100 10 50 2 0 10 2 3 0.1 1 10 100 1 10 10 10 Collector current I (mA) Collector current I (mA) C C Ver. BED 2 Transition frequency f (MHz) Collector-emitter saturation voltage V (V) ( ) Collector power dissipation P mW T CE(sat) C Collector current I (mA) Base-emitter saturation voltage V (V) Collector current I (mA) C BE(sat) C Collector output capacitance Forward current transfer ratio h C (pF) FE ob (Common base, input open circuited)

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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