Product Information

DSC2001S0L

DSC2001S0L electronic component of Panasonic

Datasheet
Transistors Bipolar - BJT SM SIG TRANS GL WNG 2.9x2.8mm
Manufacturer: Panasonic
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1

MOQ : 3000
Multiples : 3000

Stock Image

DSC2001S0L
Panasonic

3000 : USD 0.0729
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1

Stock Image

DSC2001S0L
Panasonic

1 : USD 0.9765
10 : USD 0.8033
25 : USD 0.4477
100 : USD 0.1586
250 : USD 0.1454
500 : USD 0.1186
1000 : USD 0.0825
N/A

Obsolete
0 - WHS 3

MOQ : 1
Multiples : 1

Stock Image

DSC2001S0L
Panasonic

1 : USD 0.6993
10 : USD 0.4536
100 : USD 0.0878
500 : USD 0.0648
1000 : USD 0.0518
3000 : USD 0.0432
9000 : USD 0.0389
24000 : USD 0.0378
45000 : USD 0.0335
N/A

Obsolete

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Collector- Emitter Voltage VCEO Max
Gain Bandwidth Product fT
Maximum Operating Temperature
Packaging
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Additional Infomation About Product

DSC2001 Silicon NPN epitaxial planar type For general amplication Unit: mm Complementary to DSA2001 Features High forward current transfer ratio h with excellent linearity FE Low collector-emitter saturation voltage V CE(sat) Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) Marking Symbol: C1 Packaging DSC20010L Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard) Absolute Maximum Ratings T = 25C a 1: Base Parameter Symbol Rating Unit 2: Emitter Collector-base voltage (Emitter open) V 60 V CBO 3: Collector Collector-emitter voltage (Base open) V 50 V CEO Panasonic Mini3-G3-B Emitter-base voltage (Collector open) V 7 V JEITA SC-59A EBO Code TO-236AA/SOT-23 Collector current I 100 mA C Peak collector current I 200 mA CP Collector power dissipation P 200 mW C Junction temperature T 150 C j Operating ambient temperature T 40 to +85 C opr Storage temperature T 55 to +150 C stg Electrical Characteristics T = 25C3C a Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V I = 10 mA, I = 0 60 V CBO C E Collector-emitter voltage (Base open) V I = 2 mA, I = 0 50 V CEO C B Emitter-base voltage (Collector open) V I = 10 mA, I = 0 7 V EBO E C Collector-base cutoff current (Emitter open) I V = 20 V, I = 0 0.1 mA CBO CB E Collector-emitter cutoff current (Base open) I V = 10 V, I = 0 100 mA CEO CE B 1 * Forward current transfer ratio h V = 10 V, I = 2 mA 210 460 FE CE C Collector-emitter saturation voltage V I = 100 mA, I = 10 mA 0.13 0.3 V CE(sat) C B Transition frequency f V = 10 V, I = 2 mA 150 MHz T CE C Collector output capacitance C V = 10 V, I = 0, f = 1 MHz 1.5 pF ob CB E (Common base, input open circuited) Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. 1: Rank classication * Code R S 0 Rank R S No-rank h 210 to 340 290 to 460 210 to 460 FE Marking Symbol C1R C1S C1 Product of no-rank is not classied and have no marking symbol for rank. Publication date: February 2014 Ver. EED 1DSC2001 DSC2001 IC-VCE DSC2001 hFE-IC DSC2001 PC-Ta P T I V h I C a C CE FE C 120 600 250 T = 25C V = 10 V a CE 100 500 200 T = 85C a 80 400 I = 250 A B 150 200 A 25C 60 300 150 A 100 40C 40 200 100 A 50 20 100 50 A 0 0 0 0 2 4 6 8 10 12 0.1 1 10 100 0 40 80 120 160 200 Ambient temperature T (C) Collector-emitter voltage V (V) Collector current I (mA) a CE C DSC2001 IC-VBE DSC2001 VCEsat-IC DSC2001 Cob-VCB V I I V C V CE(sat) C C BE ob CB 10 120 I / I = 10 C B V = 10 V CE 4.0 25C 100 T = 85C a 1 80 3.0 40C 60 2.0 0.1 40 T = 85C a 1.0 20 40C 25C 0 0.01 0 0 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1 10 100 1 10 100 Base-emitter voltage V (V) Collector current I (mA) Collector-base voltage V (V) BE C CB DSC2001 fT-IC f I T C 250 V = 10 V CE T = 25C a 200 150 100 50 0 0.1 1 10 100 Collector current I (mA) C Ver. EED 2 Collector-emitter saturation voltage V (V) ( ) Transition frequency f (MHz) Collector power dissipation P mW CE(sat) T C Collector current I (mA) Collector current I (mA) C C Collector output capacitance Forward current transfer ratio h C (pF) FE ob (Common base, input open circuited)

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Panasonic may also be referenced as

Aromat
PA4
PAB
PAN
Panasonic - BSG
Panasonic - ECG
Panasonic - SSG
PANASONIC / SUNX
PANASONIC ACCESSORIES
PANASONIC BATTERIES
PANASONIC BATTERY
Panasonic Electric W
Panasonic Electric Works
Panasonic Electronic Components
Panasonic Electronic Components - Semiconductor Products
PANASONIC EW / AROMAT
PANASONIC EW/AROMAT
PANASONIC IMD
PANASONIC IND DEVICES (PIDSA)
Panasonic Industrial Automation Sales
Panasonic Industrial Devices
PANASONIC PIDSMY
Panasonic Semiconductors
PB4

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