DSC7004 Silicon NPN epitaxial planar type For low frequency amplification Unit: mm Complementary to DSA7004 Features Low collector-emitter saturation voltage V CE(sat) Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) Marking Symbol: 5B Packaging DSC70040L Embossed type (Thermo-compression sealing): 1 000 pcs / reel (standard) Absolute Maximum Ratings T = 25C a Parameter Symbol Rating Unit Collector-base voltage (Emitter open) V 60 V CBO 1: Base Collector-emitter voltage (Base open) V 50 V CEO 2: Collector Emitter-base voltage (Collector open) V 5 V EBO 3: Emitter Collector current I 2 A C Panasonic MiniP3-F2-B Peak collector current I 3 A CP JEITA SC-62 Collector power dissipation P 1 W Code TO-243 C Junction temperature T 150 C j Operating ambient temperature T 40 to +85 C opr Storage temperature T 55 to +150 C stg 2 Note) Printed circuit board: Copper foil area of 1 cm or more, and the board thickness of 1.7 mm for the collector portion Absolute maximum rating without heat sink for P is 0.5 W C Electrical Characteristics T = 25C3C a Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V I = 10 mA, I = 0 60 V CBO C E Collector-emitter voltage (Base open) V I = 1 mA, I = 0 50 V CEO C B Emitter-base voltage (Collector open) V I = 10 mA, I = 0 5 V EBO E C Collector-base cutoff current (Emitter open) I V = 20 V, I = 0 0.1 mA CBO CB E 2 * h V = 2 V, I = 200 mA 120 340 FE1 CE C 1 * Forward current transfer ratio h V = 2 V, I = 1 A 80 FE2 CE C 1 * Collector-emitter saturation voltage V I = 1 A, I = 50 mA 0.15 0.3 V CE(sat) C B 1 * Base-emitter saturation voltage V I = 1 A, I = 50 mA 0.9 1.2 V BE(sat) C B Transition frequency f V = 10 V, I = 50 mA 120 MHz T CE C Collector output capacitance C V = 10 V, I = 0, f = 1 MHz 22 35 pF ob CB E (Common base, input open circuited) Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. 1: Pulse measurement * 2: Rank classification * Code R S 0 Rank R S No-rank h 120 to 240 170 to 340 120 to 340 FE1 Marking Symbol 5BR 5BS 5B Product of no-rank is not classified and have no marking symbol for rank. Publication date: February 2014 Ver. EED 1DSC7004 DSC7004 hFE-IC DSC7004 IC-VCE DSC7004 PC-Ta P T I V h I C a C CE FE C 350 1 250 2 000 T = 25C Copper plate at the collector is a I = 10 mA V = 2 V B CE 2 more than 1.0 cm in area, 1.7 mm 300 in thickness. 1 000 1 600 9 mA T = 85C a 8 mA 250 7 mA 25C 1 200 750 200 6 mA 5 mA 40C 150 500 800 4 mA 100 3 mA 400 250 2 mA 50 1 mA 0 0 0 3 4 2 1 10 10 10 10 0 2 4 6 8 10 12 0 40 80 120 160 200 ( ) Ambient temperature T C Collector-emitter voltage V (V) Collector current I (mA) a CE C DSC7004 VCEsat-IC DSC7004 IC-VBE DSC7004 Cob-VCB V I I V C V CE(sat) C C BE ob CB 10 2 000 60 I = 0 I / I = 20 E C B V = 2 V CE f = 1 MHz T = 25C T = 85C a a 50 1 600 25C 1 40 1 200 30 40C 800 0.1 20 25C T = 85C 400 a 10 40C 0.01 0 0 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1.0 1.2 1 10 100 Base-emitter voltage V (V) Collector-base voltage V (V) Collector current I (mA) BE CB C DSC7004 fT-IC f I T C 250 V = 10 V CE T = 25C a 200 150 100 50 0 0.1 1 10 100 Collector current I (mA) C Ver. EED 2 Transition frequency f (MHz) Collector-emitter saturation voltage V (V) (m ) T CE(sat) Collector power dissipation P W C Collector current I (mA) Collector current I (mA) C C Collector output capacitance Forward current transfer ratio h C (pF) FE ob (Common base, input open circuited)