Product Information

DSC7Q01R0L

DSC7Q01R0L electronic component of Panasonic

Datasheet
Transistors Bipolar - BJT BIPLR PW TRANS FLAT LEAD 4.5x4.0mm
Manufacturer: Panasonic
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1

Stock Image

DSC7Q01R0L
Panasonic

1 : USD 2.8797
10 : USD 1.2337
25 : USD 1.0785
100 : USD 0.7538
250 : USD 0.6991
500 : USD 0.6057
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1

Stock Image

DSC7Q01R0L
Panasonic

1 : USD 2.2295
10 : USD 0.9527
100 : USD 0.6306
500 : USD 0.537
1000 : USD 0.4212
2000 : USD 0.3835
10000 : USD 0.3835
N/A

Obsolete

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Maximum Operating Temperature
Packaging
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Additional Infomation About Product

DSC7Q01 Silicon NPN epitaxial planar type darlington For low frequency amplication Unit: mm Darlington connection Features High forward current transfer ratio h with excellent linearity FE Low collector-emitter saturation voltage V CE(sat) Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) Marking Symbol: 5K Packaging DSC7Q010L Embossed type (Thermo-compression sealing): 1 000 pcs / reel (standard) Absolute Maximum Ratings T = 25C a Parameter Symbol Rating Unit 1: Base Collector-base voltage (Emitter open) V 100 V CBO 2: Collector Collector-emitter voltage (Base open) V 80 V CEO 3: Emitter Emitter-base voltage (Collector open) V 5 V EBO Panasonic MiniP3-F2-B Collector current I 1 A JEITA SC-62 C Code TO-243 Peak collector current I 1.5 A CP 1 * Collector power dissipation P 1 W C C Junction temperature T 150 C j Operating ambient temperature T 40 to +85 C B opr Storage temperature T 55 to +150 C stg 2 Note) 1: Printed circuit board: Copper foil area of 1 cm or more, and the board thickness * 200 E of 1.7 mm for the collector portion Absolute maximum rating without heat sink for P is 0.5 W C Electrical Characteristics T = 25C3C a Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V I = 100 mA, I = 0 100 V CBO C E Collector-emitter voltage (Base open) V I = 1 mA, I = 0 80 V CEO C B Emitter-base voltage (Collector open) V I = 100 mA, I = 0 5 V EBO E C Collector-base cutoff current (Emitter open) I V = 25 V, I = 0 0.1 mA CBO CB E Emitter-base cutoff current (Collector open) I V = 4 V, I = 0 0.1 mA EBO EB C 1, 2 * Forward current transfer ratio h V = 10 V, I = 1 A 4 000 40 000 FE CE C 1 * Collector-emitter saturation voltage V I = 1 A, I = 1 mA 1.8 V CE(sat) C B 1 * Base-emitter saturation voltage V I = 1 A, I = 1 mA 2.2 V BE(sat) C B Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. 1: Pulse measurement * 2: Rank classication * Code Q R S 0 Rank Q R S No-rank h 4 000 to 10 000 8 000 to 20 000 16 000 to 40 000 4 000 to 40 000 FE Marking Symbol 5KQ 5KR 5KS 5K Product of no-rank is not classied and have no marking symbol for rank. Publication date: February 2014 Ver. DED 1DSC7Q01 DSC7Q01 hFE-IC DSC7Q01 PC-Ta DSC7Q01 IC-VCE P T I V h I C a C CE FE C 1 250 30 000 1 200 Copper plate at the collector is V = 10 V 2 T = 25C CE more than 1.0 cm in area, 1.7 mm a in thickness. 70 A 25 000 1 000 1 000 I = 80 A B T = 85C a 60 A 20 000 800 50 A 750 25C 40 A 15 000 600 30 A 500 10 000 400 40C 250 5 000 200 0 0 0 3 2 0 40 80 120 160 200 1 10 10 10 0 2 4 6 8 10 12 ( ) Ambient temperature T C Collector current I (mA) a Collector-emitter voltage V (V) C CE DSC7Q01 VCEsat-IC DSC7Q01 IC-VBE DSC7Q01 Cob-VCB V I I V C V CE(sat) C C BE ob CB 2 1 000 10 12 I = 0 I / I = 1 000 E C B V = 10 V CE f = 1 MHz T = 25C a 10 T = 85C 800 a 10 25C 8 600 6 40C 40C 25C 400 1 4 T = 85C a 200 2 1 10 0 0 2 3 1 10 10 10 0 0.5 1.0 1.5 2.0 2.5 1 10 100 Base-emitter voltage V (V) Collector-base voltage V (V) Collector current I (mA) BE CB C DSC7Q01 VBEsat-IC V I BE(sat) C 2 10 I / I = 1 000 C B 10 25C 40C 1 T = 85C a 1 10 2 3 1 10 10 10 Collector current I (mA) C Ver. DED 2 Base-emitter voltage V (V) Collector-emitter saturation voltage V (V) (m ) Collector power dissipation P W BE(sat) CE(sat) C Collector current I (mA) Collector current I (mA) C C Collector output capacitance Forward current transfer ratio h C (pF) FE ob (Common base, input open circuited)

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Panasonic may also be referenced as

Aromat
PA4
PAB
PAN
Panasonic - BSG
Panasonic - ECG
Panasonic - SSG
PANASONIC / SUNX
PANASONIC ACCESSORIES
PANASONIC BATTERIES
PANASONIC BATTERY
Panasonic Electric W
Panasonic Electric Works
Panasonic Electronic Components
Panasonic Electronic Components - Semiconductor Products
PANASONIC EW / AROMAT
PANASONIC EW/AROMAT
PANASONIC IMD
PANASONIC IND DEVICES (PIDSA)
Panasonic Industrial Automation Sales
Panasonic Industrial Devices
PANASONIC PIDSMY
Panasonic Semiconductors
PB4

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