DSC7Q01 Silicon NPN epitaxial planar type darlington For low frequency amplication Unit: mm Darlington connection Features High forward current transfer ratio h with excellent linearity FE Low collector-emitter saturation voltage V CE(sat) Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) Marking Symbol: 5K Packaging DSC7Q010L Embossed type (Thermo-compression sealing): 1 000 pcs / reel (standard) Absolute Maximum Ratings T = 25C a Parameter Symbol Rating Unit 1: Base Collector-base voltage (Emitter open) V 100 V CBO 2: Collector Collector-emitter voltage (Base open) V 80 V CEO 3: Emitter Emitter-base voltage (Collector open) V 5 V EBO Panasonic MiniP3-F2-B Collector current I 1 A JEITA SC-62 C Code TO-243 Peak collector current I 1.5 A CP 1 * Collector power dissipation P 1 W C C Junction temperature T 150 C j Operating ambient temperature T 40 to +85 C B opr Storage temperature T 55 to +150 C stg 2 Note) 1: Printed circuit board: Copper foil area of 1 cm or more, and the board thickness * 200 E of 1.7 mm for the collector portion Absolute maximum rating without heat sink for P is 0.5 W C Electrical Characteristics T = 25C3C a Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V I = 100 mA, I = 0 100 V CBO C E Collector-emitter voltage (Base open) V I = 1 mA, I = 0 80 V CEO C B Emitter-base voltage (Collector open) V I = 100 mA, I = 0 5 V EBO E C Collector-base cutoff current (Emitter open) I V = 25 V, I = 0 0.1 mA CBO CB E Emitter-base cutoff current (Collector open) I V = 4 V, I = 0 0.1 mA EBO EB C 1, 2 * Forward current transfer ratio h V = 10 V, I = 1 A 4 000 40 000 FE CE C 1 * Collector-emitter saturation voltage V I = 1 A, I = 1 mA 1.8 V CE(sat) C B 1 * Base-emitter saturation voltage V I = 1 A, I = 1 mA 2.2 V BE(sat) C B Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. 1: Pulse measurement * 2: Rank classication * Code Q R S 0 Rank Q R S No-rank h 4 000 to 10 000 8 000 to 20 000 16 000 to 40 000 4 000 to 40 000 FE Marking Symbol 5KQ 5KR 5KS 5K Product of no-rank is not classied and have no marking symbol for rank. Publication date: February 2014 Ver. DED 1DSC7Q01 DSC7Q01 hFE-IC DSC7Q01 PC-Ta DSC7Q01 IC-VCE P T I V h I C a C CE FE C 1 250 30 000 1 200 Copper plate at the collector is V = 10 V 2 T = 25C CE more than 1.0 cm in area, 1.7 mm a in thickness. 70 A 25 000 1 000 1 000 I = 80 A B T = 85C a 60 A 20 000 800 50 A 750 25C 40 A 15 000 600 30 A 500 10 000 400 40C 250 5 000 200 0 0 0 3 2 0 40 80 120 160 200 1 10 10 10 0 2 4 6 8 10 12 ( ) Ambient temperature T C Collector current I (mA) a Collector-emitter voltage V (V) C CE DSC7Q01 VCEsat-IC DSC7Q01 IC-VBE DSC7Q01 Cob-VCB V I I V C V CE(sat) C C BE ob CB 2 1 000 10 12 I = 0 I / I = 1 000 E C B V = 10 V CE f = 1 MHz T = 25C a 10 T = 85C 800 a 10 25C 8 600 6 40C 40C 25C 400 1 4 T = 85C a 200 2 1 10 0 0 2 3 1 10 10 10 0 0.5 1.0 1.5 2.0 2.5 1 10 100 Base-emitter voltage V (V) Collector-base voltage V (V) Collector current I (mA) BE CB C DSC7Q01 VBEsat-IC V I BE(sat) C 2 10 I / I = 1 000 C B 10 25C 40C 1 T = 85C a 1 10 2 3 1 10 10 10 Collector current I (mA) C Ver. DED 2 Base-emitter voltage V (V) Collector-emitter saturation voltage V (V) (m ) Collector power dissipation P W BE(sat) CE(sat) C Collector current I (mA) Collector current I (mA) C C Collector output capacitance Forward current transfer ratio h C (pF) FE ob (Common base, input open circuited)