2N3906 Preferred Device General Purpose Transistors PNP Silicon 2N3906 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage (Note 2) (I = 1.0 mAdc, I = 0) V 40 Vdc C B (BR)CEO CollectorBase Breakdown Voltage (I = 10 Adc, I = 0) V 40 Vdc C E (BR)CBO EmitterBase Breakdown Voltage (I = 10 Adc, I = 0) V 5.0 Vdc E C (BR)EBO Base Cutoff Current (V = 30 Vdc, V = 3.0 Vdc) I 50 nAdc CE EB BL Collector Cutoff Current (V = 30 Vdc, V = 3.0 Vdc) I 50 nAdc CE EB CEX ON CHARACTERISTICS (Note 2) DC Current Gain (I = 0.1 mAdc, V = 1.0 Vdc) h 60 C CE FE (I = 1.0 mAdc, V = 1.0 Vdc) 80 C CE (I = 10 mAdc, V = 1.0 Vdc) 100 300 C CE (I = 50 mAdc, V = 1.0 Vdc) 60 C CE (I = 100 mAdc, V = 1.0 Vdc) 30 C CE CollectorEmitter Saturation Voltage (I = 10 mAdc, I = 1.0 mAdc) V 0.25 Vdc C B CE(sat) (I = 50 mAdc, I = 5.0 mAdc 0.4 C B BaseEmitter Saturation Voltage (I = 10 mAdc, I = 1.0 mAdc) V 0.65 0.85 Vdc C B BE(sat) (I = 50 mAdc, I = 5.0 mAdc) 0.95 C B SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product (I = 10 mAdc, V = 20 Vdc, f = 100 MHz) f 250 MHz C CE T Output Capacitance (V = 5.0 Vdc, I = 0, f = 1.0 MHz) C 4.5 pF CB E obo Input Capacitance (V = 0.5 Vdc, I = 0, f = 1.0 MHz) C 10 pF EB C ibo Input Impedance (I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz) h 2.0 12 k C CE ie 4 Voltage Feedback Ratio (I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz) h 0.1 10 X 10 C CE re SmallSignal Current Gain (I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz) h 100 400 C CE fe Output Admittance (I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz) h 3.0 60 mhos C CE oe Noise Figure (I = 100 Adc, V = 5.0 Vdc, R = 1.0 k , f = 1.0 kHz) NF 4.0 dB C CE S SWITCHING CHARACTERISTICS Delay Time t 35 ns d (V = 3.0 Vdc, V = 0.5 Vdc, CC BE I = 10 mAdc, I = 1.0 mAdc) C B1 Rise Time t 35 ns r Storage Time (V = 3.0 Vdc, I = 10 mAdc, I = I = 1.0 mAdc) t 225 ns CC C B1 B2 s Fall Time (V = 3.0 Vdc, I = 10 mAdc, I = I = 1.0 mAdc) t 75 ns CC C B1 B2 f 2. Pulse Test: Pulse Width 300 s Duty Cycle 2%.