X-On Electronics has gained recognition as a prominent supplier of 2SB1132SQ-Q Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SB1132SQ-Q Bipolar Transistors - BJT are a product manufactured by Pingjingsemi. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SB1132SQ-Q Pingjingsemi

Name: 2SB1132SQ-Q
Brand: Pingjingsemi
SKU: 2SB1132SQQ_Pingjingsemi
Availability: InStock
Rating: 5 (11 reviews)

2SB1132SQ-Q electronic component of Pingjingsemi

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Part No.	2SB1132SQ-Q
Manufacturer:	Pingjingsemi
Category:	Bipolar Transistors - BJT
Description:	Transistors (NPN/PNP) SOT-89 RoHS
Datasheet:	2SB1132SQ-Q Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

10: USD 0.0629 ea
Line Total: USD 0.63

Availability - 311
Ship by Fri. 06 Dec to Wed. 11 Dec

MOQ: 10 Multiples: 10
Pack Size: 10

2SB1132SQ-Q More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

311

Ship by Fri. 06 Dec to Wed. 11 Dec

MOQ : 10
Multiples : 10

10 : USD 0.0629
100 : USD 0.0503
300 : USD 0.044
1000 : USD 0.0391
5000 : USD 0.0353
10000 : USD 0.0335

Specifications

Manufacturer
Pingjingsemi Pingjingsemi

Product Category
Bipolar Transistors - BJT Bipolar Transistors - BJT

Brand
Pingjingsemi Pingjingsemi

Rohs
Y Y

Package
SOT - 89 SOT - 89

Transistor Type
PNP PNP

Current - Collector Ic Max
1 A 1 A

Voltage - Collector Emitter Breakdown Max
32 V 32 V

Power - Max
500 mW 500 mW

Collector Cut-Off Current Icbo
500 nA 500 nA

Collector-Emitter Breakdown Voltage Vceo
32 V 32 V

Power Dissipation Pd
500 mW 500 mW

Collector Current Ic
1 A 1 A

Dc Current Gain Hfe@Ic Vce
120@500 mA , 2V 120@500 mA , 2V

Transition Frequency Ft
150MHz 150MHz

Collector-Emitter Saturation Voltage Vcesat@Ic Ib
200 mV @500 mA , 50 mA 200 mV @500 mA , 50 mA

Operating Temperature
+ 150 C @ (Tj) + 150 C @ (Tj)

Notes:- Show Stocked Products With Similar Attributes.

2SB1132SQ-Q Alternative Parts

We are delighted to provide the 2SB1132SQ-Q from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SB1132SQ-Q and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

The 2SB1132SQ-Q is a SOT-89 packaged NPN transistor manufactured by Pingjingsemi. It has a Collector-Base breakdown voltage of 100V, a maximum collector current rating of 0.2A, and a maximum collector-emitter voltage of -20V. The maximum power dissipation is 500mW and the operating temperature range is between -55C to 150C. This transistor is RoHS compliant, and is commonly used for signal amplification and switching applications.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

PJ(Pingjingsemi) may also be referenced as

PJSEMI

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Availability	Price	Buy Price	Quantity
311 Ship by Fri. 06 Dec to Wed. 11 Dec MOQ : 10 Multiples : 10	10 : USD 0.0629 100 : USD 0.0503 300 : USD 0.044 1000 : USD 0.0391 5000 : USD 0.0353 10000 : USD 0.0335

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