CM200DY-34A Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Dual IGBTMOD www.pwrx.com A-Series Module 200 Amperes/1700 Volts A F F W X G2 G E2 B H E N E1 G G1 C2E1 E2 C1 L K K K (4 PLACES) M NUTS Description: D (3 PLACES) Powerex IGBTMOD Modules are designed for use in switching T THICK PP P Q Q U WIDTH applications. Each module consists of two IGBT Transistors S in a half-bridge configuration with C V each transistor having a reverse- LABEL R connected super-fast recovery free-wheel diode. All components and interconnects are isolated from G2 the heat sinking baseplate, offering simplified system assembly and E2 thermal management. C2E1 E2 C1 Features: Low Drive Power Low V CE(sat) E1 Discrete Super-Fast Recovery G1 Free-Wheel Diode Isolated Baseplate for Easy Heat Sinking Applications: AC Motor Control Outline Drawing and Circuit Diagram UPS Dimensions Inches Millimeters Dimensions Inches Millimeters Battery Powered Supplies A 4.25 108.0 N 1.18 30.0 B 2.44 62.0 P 0.71 18.0 Ordering Information: Example: Select the complete C 1.18+0.04/-0.02 30.0+1.0/-0.5 Q 0.28 7.0 part module number you D 3.660.01 93.00.25 R 0.87 22.2 desire from the table below -i.e. E 1.890.01 48.00.25 S 0.33 8.5 CM200DY-34A is a 1700V (V ), CES 200 Ampere Dual IGBTMOD F 0.98 25.0 T 0.02 0.5 Power Module. G 0.24 6.0 U 0.110 2.8 Type Current Rating V H 0.59 15.0 V 0.16 4.0 CES Amperes Volts (x 50) K 0.55 14.0 W 0.85 21.5 CM 200 34 L M6 Metric M6 X 0.94 24.0 M M6 Metric M6 10/13 Rev. 2 1Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM200DY-34A Dual IGBTMOD A-Series Module 200 Amperes/1700 Volts Absolute Maximum Ratings, T = 25C unless otherwise specified j Ratings Symbol CM200DY-34A Units Junction Temperature T 40 to 150 C j Storage Temperature T 40 to 125 C stg Collector-Emitter Voltage (G-E Short) V 1700 Volts CES Gate-Emitter Voltage (C-E Short) V 20 Volts GES 4 Collector Current (DC, T = 109C)* I 200 Amperes C C 2 Peak Collector Current (Pulse Repetition)* I 400 Amperes CM 1 Emitter Current (T = 25C) I * 200 Amperes C E 2 1 Peak Emitter Current (Pulse Repetition)* I * 400 Amperes EM 2, 4 Maximum Collector Dissipation (T = 25C, T 150C)* * P 1980 Watts C j C Mounting Torque, M6 Main Terminal 40 in-lb Mounting Torque, M6 Mounting 40 in-lb Weight 400 Grams Isolation Voltage (Main Terminal to Baseplate, f = 60Hz, AC 1 min.) V 3500 Volts ISO Static Electrical Characteristics, T = 25C unless otherwise specified j Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current I V = V , V = 0V 1.0 mA CES CE CES GE Gate Leakage Current I V = V , V = 0V 2.0 A GES GE GES CE Gate-Emitter Threshold Voltage V I = 20mA, V = 10V 5.5 7.0 8.5 Volts GE(th) C CE 3 Collector-Emitter Saturation Voltage V I = 200A, V = 15V, T = 25C* 2.2 2.8 Volts CE(sat) C GE j 3 I = 200A, V = 15V, T = 125C* 2.45 Volts C GE j Total Gate Charge Q V = 1000V, I = 200A, V = 15V 1330 nC G CC C GE 1 3 Emitter-Collector Voltage V * I = 200A, V = 0V* 3.0 Volts EC E GE Dynamic Electrical Characteristics, T = 25C unless otherwise specified j Characteristics Symbol Test Conditions Min. Typ. Max. Units Input Capacitance C 49.4 nf ies Output Capacitance C V = 10V, V = 0V 5.6 nf oes CE GE Reverse Transfer Capacitance C 1.06 nf res Inductive Turn-on Delay Time t 550 ns d(on) Load Rise Time t V = 1000V, I = 200A, 190 ns r CC C Switch Turn-off Delay Time t V = V = 15V, R = 2.4, 750 ns d(off) GE1 GE2 G Time Fall Time t Inductive Load 350 ns f 1 Diode Reverse Recovery Time t * Switching Operation, 450 ns rr 1 Diode Reverse Recovery Charge Q * I = 200A 20 C rr E *1 Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). *2 Pulse width and repetition rate should be such that device junction temperature (T ) does not exceed T rating. j j(max) *3 Pulse width and repetition rate should be such as to cause negligible temperature rise. *4 Case temperature (T ), and heatsink temperature (T ) measured point is just under the chips. C f 2 10/13 Rev. 2