CM300DY-12H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Dual IGBTMOD H-Series Module 300 Amperes/600 Volts A B H E E H S C2E1 E2 C1 G C K S L Description: R - M5 THD (3 TYP.) Powerex IGBTMOD Modules P - DIA. (2 TYP.) are designed for use in switching .110 TAB applications. Each module consists J JJ N N of two IGBT Transistors in a half-bridge configuration with each M transistor having a reverse- connected super-fast recovery D F free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, Q offering simplified system assem- bly and thermal management. Features: G2 h Low Drive Power E2 h Low V CE(sat) h Discrete Super-Fast Recovery (70ns) Free-Wheel Diode C2E1 E2 C1 h High Frequency Operation (20-25kHz) E1 h Isolated Baseplate for Easy G1 Heat Sinking Applications: Outline Drawing and Circuit Diagram h AC Motor Control h Motion/Servo Control Dimensions Inches Millimeters Dimensions Inches Millimeters h UPS A 3.70 94.0 K 0.51 13.0 h Welding Power Supplies B 3.1500.01 80.00.25 L 0.47 12.0 h Laser Power Supplies C 1.89 48.0 M 0.30 7.5 Ordering Information: D 1.18 Max. 30.0 Max. N 0.28 7.0 Example: Select the complete part E 0.90 23.0 P 0.256 Dia. Dia. 6.5 module number you desire from F 0.83 21.2 Q 0.26 6.5 the table below -i.e. CM300DY-12H G 0.71 18.0 R M5 Metric M5 is a 600V (V ), 300 Ampere CES Dual IGBTMOD Power Module. H 0.67 17.0 S 0.16 4.0 Type Current Rating V J 0.63 16.0 CES Amperes Volts (x 50) CM 300 12 245 G1 E1 E2 G2Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM300DY-12H Dual IGBTMOD H-Series Module 300 Amperes/600 Volts Absolute Maximum Ratings, T = 25 C unless otherwise specified j Ratings Symbol CM300DY-12H Units Junction Temperature T 40 to 150 C j Storage Temperature T 40 to 125 C stg Collector-Emitter Voltage (G-E SHORT) V 600 Volts CES Gate-Emitter Voltage V 20 Volts GES Collector Current I 300 Amperes C Peak Collector Current I 600* Amperes CM Diode Forward Current I 300 Amperes F Diode Forward Surge Current I 600* Amperes FM Power Dissipation P 1100 Watts d Max. Mounting Torque M5 Terminal Screws 17 in-lb Max. Mounting Torque M6 Mounting Screws 26 in-lb Module Weight (Typical) 270 Grams V Isolation V 2500 Volts RMS * Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating. Static Electrical Characteristics, T = 25 C unless otherwise specified j Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current I V = V , V = 0V 1.0 mA CES CE CES GE Gate Leakage Current I V = V , V = 0V 0.5 A GES GE GES CE Gate-Emitter Threshold Voltage V I = 30mA, V = 10V 4.5 6.0 7.5 Volts GE(th) C CE Collector-Emitter Saturation Voltage V I = 300A, V = 15V 2.1 2.8** Volts CE(sat) C GE I = 300A, V = 15V, T = 150C 2.15 Volts C GE j Total Gate Charge Q V = 300V, I = 300A, V = 15V 900 nC G CC C GS Diode Forward Voltage V I = 300A, V = 0V 2.8 Volts FM E GS ** Pulse width and repetition rate should be such that device junction temperature rise is negligible. Dynamic Electrical Characteristics, T = 25 C unless otherwise specified j Characteristics Symbol Test Conditions Min. Typ. Max. Units Input Capacitance C 30 nF ies Output Capacitance C V = 0V, V = 10V, f = 1MHz 10.5 nF oes GE CE Reverse Transfer Capacitance C 6 nF res Resistive Turn-on Delay Time t 350 ns d(on) Load Rise Time t V = 300V, I = 300A, 600 ns r CC C Switching Turn-off Delay Time t V = V = 15V, R = 2.1 350 ns d(off) GE1 GE2 G Times Fall Time t 300 ns f Diode Reverse Recovery Time t I = 300A, di /dt = 600A/s 110 ns rr E E Diode Reverse Recovery Charge Q I = 300A, di /dt = 600A/s 0.81 C rr E E Thermal and Mechanical Characteristics, T = 25 C unless otherwise specified j Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case R Per IGBT 0.11 C/W th(j-c) Thermal Resistance, Junction to Case R Per FWDi 0.24 C/W th(j-c) Contact Thermal Resistance R Per Module, Thermal Grease Applied 0.065 C/W th(c-f) 246