<IGBT Modules> CM300DY-24S HIGH POWER SWITCHING USE INSULATED TYPE Collector current I ...................................... 3 0 0 A C Collector-emitter voltage V ........................ 1 2 0 0 V CES Maximum junction temperature T ..................... 1 7 5 C jmax Flat base Type Copper base plate RoHS Directive compliant UL Recognized under UL1557, File E323585 dual switch (Half-Bridge) APPLICATION AC Motor Control, Motion/Servo Control, Power supply, etc. OUTLINE DRAWING & INTERNAL CONNECTION Dimension in mm INTERNAL CONNECTION Tolerance otherwise specified Division of Dimension Tolerance 0.5 to 3 0.2 Di1 over 3 to 6 0.3 Tr2 C2E1 E2 C1 over 6 to 30 0.5 Tr1 over 30 to 120 0.8 Di2 over 120 to 400 1.2 Publication Date : February 2015 1 CMH-10486 Ver.1.5 G1 E1 E2 G2 (Es1) (Es2) <IGBT Modules> CM300DY-24S HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS (T=25 C, unless otherwise specified) j Symbol Item Conditions Rating Unit V Collector-emitter voltage G-E short-circuited 1200 V CES V Gate-emitter voltage C-E short-circuited 20 V GES (Note2, 4) I DC, T =119 C 300 C C Collector current A (Note3) ICRM Pulse, Repetitive 600 (Note2, 4) P Total power dissipation T =25 C 2270 W t ot C (Note1) (Note2) I DC 300 E Emitter current A (Note1) (Note3) I Pulse, Repetitive 600 ERM V i so l Isolation voltage Terminals to base plate, RMS, f=60 Hz, AC 1 min 2500 V T Maximum junction temperature Instantaneous event (overload) 175 j m ax C (Note4) T Maximum case temperature 125 c m ax T Operating junction temperature Continuous operation (under switching) -40 ~ +150 j op C T st g Storage temperature - -40 ~ +125 ELECTRICAL CHARACTERISTICS (T =25 C, unless otherwise specified) j Limits Symbol Item Conditions Unit Min. Typ. Max. I Collector-emitter cut-off current V =V , G-E short-circuited - - 1.0 mA CES CE CES IGES Gate-emitter leakage current V =V , C-E short-circuited - - 0.5 A GE GES V Gate-emitter threshold voltage I =30 mA, V =10 V 5.4 6.0 6.6 V GE(th) C CE I =300 A, V =15 V, T =25 C - 1.80 2.25 j C GE V CEsat Refer to the figure of test circuit T =125 C - 2.00 - V j (Terminal) (Note5) T j=150 C - 2.05 - Collector-emitter saturation voltage I =300 A, T =25 C - 1.70 2.15 j C V CEsat V =15 V, T =125 C - 1.90 - V j GE (Chip) (Note5) T =150 C - 1.95 - j C i es Input capacitance - - 30 C Output capacitance V =10 V, G-E short-circuited - - 6.0 nF oe s CE C Reverse transfer capacitance - - 0.5 re s Q Gate charge V =600 V, I =300 A, V =15 V - 700 - nC G CC C GE t d( o n) Turn-on delay time - - 800 V =600 V, I =300 A, V =15 V, CC C GE t Rise time - - 200 r ns t Turn-off delay time - - 600 d( of f ) R =0 , Inductive load G t Fall time - - 300 f I =300 A, G-E short-circuited, T j=25 C - 1.85 2.30 E (Note.1) V EC Refer to the figure of test circuit T =125 C - 1.85 - V j (Terminal) (Note5) T =150 C - 1.85 - j Emitter-collector voltage I =300 A, T =25 C - 1.70 2.15 E j (Note.1) V EC G-E short-circuited, T j=125 C - 1.70 - V (Chip) (Note5) T =150 C - 1.70 - j (Note1) t Reverse recovery time V =600 V, I =300 A, V =15 V, - - 300 ns rr CC E GE (Note1) Q Reverse recovery charge R =0 , Inductive load - 16 - C rr G Eon Turn-on switching energy per pulse VCC=600 V, IC=IE=300 A, - 41 - mJ E Turn-off switching energy per pulse V =15 V, R =0 , - 32 - off GE G (Note1) E Reverse recovery energy per pulse T =150 C, Inductive load - 22 - mJ rr j R Internal lead resistance Main terminals -chip, per switch, T =25 C - - 0.9 m CC + E E C r g Internal gate resistance Per switch - 6.5 - Publication Date : February 2015 2 CMH-10486 Ver.1.5