CM400DY-24A Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Dual IGBTMOD A-Series Module 400 Amperes/1200 Volts A F F W G2 G E2 B H E J N E1 G1 G C2E1 E2 C1 L K K K (4 PLACES) Description: M NUTS D (3 PLACES) Powerex IGBTMOD Modules are designed for use in switching applications. Each module consists T THICK P P P Q Q U WIDTH of two IGBT Transistors in a half- bridge configuration with each tran - S sistor having a reverse-connected C V super-fast recovery free-wheel LABEL R diode. All components and inter- connects are isolated from the heat sinking baseplate, offering simpli- fied system assembly and thermal G2 management. E2 Features: C2E1 E2 C1 Low Drive Power Low V CE(sat) Discrete Super-Fast Recovery E1 Free-Wheel Diode G1 Isolated Baseplate for Easy Heat Sinking Applications: AC Motor Control Outline Drawing and Circuit Diagram UPS Battery Powered Supplies Dimensions Inches Millimeters Dimensions Inches Millimeters M M6 Metric M6 A 4.33 110.0 Ordering Information: N 1.18 30.0 B 3.15 80.0 Example: Select the complete part module number you de- P 0.71 18.0 C 1.14+0.4/-0.002 29.0+1.0/-0.5 sire from the table below -i.e. Q 0.28 7.0 D 3.660.01 93.00.25 CM400DY-24A is a 1200V (V ), CES R 0.83 21.2 E 2.440.01 62.00.25 400 Ampere Dual IGBTMOD S 0.33 8.5 Power Module F 0.98 25.0 T 0.02 0.5 Type Current Rating V G 0.24 6.0 CES Amperes Volts (x 50) U 0.110 2.8 H 0.59 15.0 CM 400 24 V 0.16 4.0 J 0.81 20.5 W 0.85 21.5 K 0.55 14.0 L 0.26 Dia. Dia. 6.5 Rev. 10/07 1Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 CM400DY-24A Dual IGBTMOD A-Series Module 400 Amperes/1200 Volts Absolute Maximum Ratings, T = 25C unless otherwise specified j Ratings Symbol CM400DY-24A Units Junction Temperature T 40 to 150 C j Storage Temperature T 40 to 125 C stg Collector-Emitter Voltage (G-E Short) V 1200 Volts CES Gate-Emitter Voltage (C-E Short) V 20 Volts GES Collector Current (DC, T = 87C*) I 400 Amperes C C Peak Collector Current I 800** Amperes CM Emitter Current*** (T = 25C) I 400 Amperes C E Peak Emitter Current*** I 800** Amperes EM Maximum Collector Dissipation (T = 25C*, T 150C) P 2710 Watts C j C Mounting Torque, M6 MainTerminal 40 in-lb Mounting Torque, M6 Mounting 40 in-lb Weight 580 Grams Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V 2500 Volts ISO Static Electrical Characteristics, T = 25C unless otherwise specified j Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current I V = V , V = 0V 1.0 mA CES CE CES GE Gate Leakage Current I V = V , V = 0V 0.5 A GES GE GES CE Gate-Emitter Threshold Voltage V I = 40mA, V = 10V 6.0 7.0 8.0 Volts GE(th) C CE Collector-Emitter Saturation Voltage V I = 400A, V = 15V, T = 25C 2.1 3.0 Volts CE(sat) C GE j I = 400A, V = 15V, T = 125C 2.4 Volts C GE j Total Gate Charge Q V = 600V, I = 400A, V = 15V 2000 nC G CC C GE Emitter-Collector Voltage** V I = 400A, V = 0V 3.8 Volts EC E GE Dynamic Electrical Characteristics, T = 25C unless otherwise specified j Characteristics Symbol Test Conditions Min. Typ. Max. Units Input Capacitance C 70 nf ies Output Capacitance C V = 10V, V = 0V 6.0 nf oes CE GE Reverse Transfer Capacitance C 1.4 nf res Inductive Turn-on Delay Time t 550 ns d(on) Load Rise Time t V = 600V, I = 400A, 180 ns r CC C Switch Turn-off Delay Time t V = V = 15V, R = 0.78 , 600 ns d(off) GE1 GE2 G Time Fall Time t Inductive Load 350 ns f Diode Reverse Recovery Time** t Switching Operation, 250 ns rr Diode Reverse Recovery Charge** Q I = 400A 16 C rr E *T , T measured point is just under the chips. C f **Pulse width and repetition rate should be such that device junction temperature (T ) does not exceed T rating. j j(max) ***Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). 2 Rev. 10/07