X-On Electronics has gained recognition as a prominent supplier of CM50DU-24F IGBT Modules across the USA, India, Europe, Australia, and various other global locations. CM50DU-24F IGBT Modules are a product manufactured by Mitsubishi. We provide cost-effective solutions for IGBT Modules, ensuring timely deliveries around the world.

CM50DU-24F Mitsubishi

CM50DU-24F electronic component of Mitsubishi
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Part No.CM50DU-24F
Manufacturer: Mitsubishi
Category: IGBT Modules
Description: IGBT MODULE, 1.2KV, 50A
Datasheet: CM50DU-24F Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 124.3627 ea
Line Total: USD 124.36 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 124.3627
10 : USD 105.2116
25 : USD 99.9196

   
Manufacturer
Product Category
Brand
Transistor Polarity
Dc Collector Current
Collector Emitter Voltage Vces
Power Dissipation Pd
Collector Emitter Voltage Vbrceo
Operating Temperature Range
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the CM50DU-24F from our IGBT Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CM50DU-24F and other electronic components in the IGBT Modules category and beyond.

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CM CM50DU-24F Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Trench Gate Design Dual IGBTMOD 50 Amperes/1200 Volts A N D P - NUTS (3 TYP) T MEASURED POINT C Y E C2E1 E2 C1 W Q (2 F PLACES) B X G F Description: Powerex IGBTMOD Modules M K K J are designed for use in switching R applications. Each module con- H (4 PLACES) sists of two IGBT Transistors in a T V T S half-bridge conguration with each U U transistor having a reverse-con- nected super-fast recovery free- C wheel diode. All components and L interconnects are isolated from the heat sinking baseplate, offering simplied system assembly and G2 thermal management. E2 RTC Features: C2E1 Low Drive Power C1 Low V E2 CE(sat) RTC Discrete Super-Fast Recovery Free-Wheel Diode E1 G1 Isolated Baseplate for Easy Heat Sinking Applications: AC Motor Control Outline Drawing and Circuit Diagram UPS Battery Powered Supplies Dimensions Inches Millimeters Dimensions Inches Millimeters A 3.70 94.0 N 0.28 7.0 Ordering Information: B 1.89 48.0 P M5 M5 Example: Select the complete C 1.18 +0.04/-0.02 30.0 +1.0/-0.5 Q Dia. 0.26 6.5 Dia. module number you desire from D 3.150.01 80.00.25 R 0.02 4.0 the table - i.e. CM50DU-24Fis a E 0.43 11.0 S 0.30 7.5 1200V (V ), 50 Ampere Dual CES F 0.16 4.0 T 0.63 16.0 IGBTMOD Power Module. G 0.71 18.0 U 0.10 2.5 Current Rating V CES H 0.02 0.5 V 1.0 25.0 Type Amperes Volts (x 50) J 0.53 13.5 W 0.94 24.0 CM 50 24 K 0.91 23.0 X 0.51 13.0 L 0.83 21.2 Y 0.47 12.0 M 0.67 17.0 Z 0.47 12.0 11 G1 E1 E2 G2Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM50DU-24F Trench Gate Design Dual IGBTMOD 50 Amperes/1200 Volts Absolute Maximum Ratings, T = 25C unless otherwise specied j Ratings Symbol CM50DU-24F Units Junction Temperature T -40 to 150 C j Storage Temperature T -40 to 125 C stg Collector-Emitter Voltage (G-E SHORT) V 1200 Volts CES Gate-Emitter Voltage (C-E SHORT) V 20 Volts GES Collector Current (T = 25C) I 50 Amperes c C Peak Collector Current I 100* Amperes CM Emitter Current** (T = 25C) I 50 Amperes c E Peak Emitter Current** I 100* Amperes EM Maximum Collector Dissipation (T = 25C, T 150C) P 320 Watts c j c Mounting Torque, M5 Main Terminal 31 in-lb Mounting Torque, M6 Mounting 40 in-lb Weight 310 Grams Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V 2500 Volts iso Static Electrical Characteristics, T = 25C unless otherwise specied j Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current I V = V , V = 0V 1 mA CES CE CES GE Gate Leakage Current I V = V , V = 0V 20 A GES GE GES CE Gate-Emitter Threshold Voltage V I = 5mA, V = 10V 5 6 7 Volts GE(th) C CE Collector-Emitter Saturation Voltage V I = 50A, V = 15V, T = 25C 1.8 2.4 Volts CE(sat) C GE j I = 50A, V = 15V, T = 125C 1.9 Volts C GE j Total Gate Charge Q V = 600V, I = 50A, V = 15V 550 nC G CC C GE Emitter-Collector Voltage** V I = 50A, V = 0V 3.2 Volts EC E GE * Pulse width and repetition rate should be such that the device junction temperature (T ) does not exceed T rating. j j(max) ** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). 22

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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