CM600DY-24S Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Dual IGBT www.pwrx.com S-Series Module 600 Amperes/1200 Volts A D L K (4 PLACES) K K V G G2 E2 C2E1 E2 C1 E B H J N E1 G1 M G (3 PLACES) X Description: Z F F Y Powerex Dual IGBT Modules are U Q Q designed for use in switching V P P P applications. Each module consists W S of two IGBT Transistors in a C half-bridge configuration with each LABEL R transistor having a reverse- connected super-fast recovery free-wheel diode. All components G2 Tolerance Otherwise Specified Division of Dimension Tolerance E2 (Es2) and interconnects are isolated from 0.5 to 3 0.2 over 3 to 6 0.3 Tr2 Di1 the heat sinking baseplate, offering over 6 to 30 0.5 E2 C2E1 C1 over 30 to 120 0.8 Tr1 simplified system assembly and over 120 to 400 1.2 Di2 thermal management. E1 (Es1) G1 Features: Outline Drawing and Circuit Diagram Low Drive Power Low V CE(sat) Dimensions Inches Millimeters Dimensions Inches Millimeters Discrete Super-Fast Recovery A 4.33 110.0 N 1.18 30.0 Free-Wheel Diode B 3.15 80.0 P 0.71 18.0 Isolated Baseplate for Easy C 1.14+0.04/-0.02 29.0+1.0/-0.5 Q 0.28 7.0 Heat Sinking D 3.660.01 93.00.25 R 0.83 21.2 Applications: E 2.440.01 62.00.25 S 0.33 8.5 AC Motor Control F 0.98 25.0 T 0.016 0.4 Motion/Servo Control G 0.24 6.0 U 0.16 4.0 UPS Welding Power Supplies H 0.59 15.0 V 0.11 2.8 Laser Power Supplies J 0.81 20.5 W 0.30 7.5 K 0.55 14.0 X 0.21 6.3 Ordering Information: Example: Select the complete L 0.26 Dia. 6.5 Dia. Y 0.47 12.0 module number you desire from M M6 Metric M6 Z 0.85 21.5 the table - i.e. CM600DY-24S is a 1200V (V ), 600 Ampere Dual CES IGBT Power Module. Current Rating V CES Type Amperes Volts (x 50) CM 600 24 11/12 Rev. 0 1Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM600DY-24S Dual IGBT S-Series Module 600 Amperes/1200 Volts Absolute Maximum Ratings, T = 25C unless otherwise specified j Characteristics Symbol Rating Units Collector-Emitter Voltage (G-E Short-Circuited) V 1200 Volts CES Gate-Emitter Voltage (C-E Short-Circuited) V 20 Volts GES *2,*4 Collector Current (DC, T = 112C) I 600 Amperes C C *3 Collector Current (Pulse, Repetitive) I 1200 Amperes CRM *2,*4 Total Power Dissipation (T = 25C) P 4050 Watts C tot *2 *1 Emitter Current I 600 Amperes E *3 *1 Emitter Current (Pulse, Repetitive) I 1200 Amperes ERM Isolation Voltage (Terminals to Baseplate, RMS, f = 60Hz, AC 1 minute) V 2500 Volts ISO Maximum Junction Temperature T 175 C j(max) *4 Maximum Case Temperature T 125 C C(max) Operating Junction Temperature (Under Switching) T -40 to +150 C j(opr) Storage Temperature T -40 to +125 C stg *1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi). *2 Junction temperature (T ) should not increase beyond maximum junction j temperature (T ) rating. j(max) *3 Pulse width and repetition rate should be such that device junction temperature (T ) j does not exceed T rating. j(max) Di1 Tr1 57.5 *4 Case temperature (T ) and heatsink temperature (T ) is measured on the surface C s 49.1 Tr2 Tr2 Tr2 (mounting side) of the baseplate and the heatsink side just under the chips. Di1 Tr1 44.3 Refer to the figure to the right for chip location. 35.6 Di2 Di2 Di2 The heatsink thermal resistance should be measured just under the chips. Di1 Tr1 31.1 0 0 LABEL SIDE Tr1/Tr2: IGBT Di1/Di2: FWDi 2 11/12 Rev. 0 0 20.4 33.6 46.8 66.1 79.3