CM600DY-12NF Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Dual IGBTMOD www.pwrx.com NF-Series Module 600 Amperes/600 Volts T MEASURED POINT C (BASEPLATE) A F F W G2 G E2 B H J E N E1 G G1 C2E1 E2 C1 Description: Powerex IGBTMOD Modules L K K K are designed for use in switching (4 PLACES) M NUTS applications. Each module consists D (3 PLACES) of two IGBT Transistors in a half- bridge configuration with each tran- T THICK P P P sistor having a reverse-connected Q Q U WIDTH super-fast recovery free-wheel diode. All components and S interconnects are isolated from C V LABEL R the heatsinking baseplate, offering simplified system assembly and thermal management. G2 Features: E2 Low Drive Power Low V CE(sat) Discrete Super-Fast Recovery C2E1 E2 C1 Free-Wheel Diode Isolated Baseplate for Easy E1 Heat Sinking G1 Applications: AC Motor Control Outline Drawing and Circuit Diagram UPS Battery Powered Supplies Dimensions Inches Millimeters Dimensions Inches Millimeters M M6 Metric M6 A 4.33 110.0 Ordering Information: N 1.18 30.0 Example: Select the complete B 3.15 80.0 part module number you desire P 0.71 18.0 C 1.14+0.04/-0.002 29.0+1.0/-0.5 from the table below -i.e. Q 0.28 7.0 D 3.660.01 93.00.25 CM600DY-12NF is a 600V R 0.83 21.2 E 2.440.01 62.00.25 (V ), 600 Ampere Dual CES S 0.33 8.5 IGBTMOD Power Module. F 0.98 25.0 Type Current Rating V T 0.02 0.5 CES G 0.24 6.0 Amperes Volts (x 50) U 0.110 2.8 H 0.59 15.0 CM 600 12 V 0.16 4.0 J 0.81 20.5 W 0.85 21.5 K 0.55 14.0 L 0.26 Dia. Dia. 6.5 Rev. 09/09 1Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM600DY-12NF Dual IGBTMOD NF-Series Module 600 Amperes/600 Volts Absolute Maximum Ratings, T = 25 C unless otherwise specified j Ratings Symbol CM600DY-12NF Units Junction Temperature T 40 to 150 C j Storage Temperature T 40 to 125 C stg Collector-Emitter Voltage (G-E Short) V 600 Volts CES Gate-Emitter Voltage (C-E Short) V 20 Volts GES Collector Current*** (DC, T = 89C) I 600 Amperes C C Peak Collector Current I 1200* Amperes CM Emitter Current** (T = 25C) I 600 Amperes C E Emitter Surge Current** I 1200* Amperes EM Maximum Collector Dissipation (T = 25C, T 150C) P 1130 Watts C j C Mounting Torque, M6 Main Terminal 40 in-lb Mounting Torque, M6 Mounting 40 in-lb Weight 580 Grams Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V 2500 Volts ISO Static Electrical Characteristics, T = 25 C unless otherwise specified j Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current I V = V , V = 0V 1.0 mA CES CE CES GE Gate Leakage Current I V = V , V = 0V 0.5 A GES GE GES CE Gate-Emitter Threshold Voltage V I = 60mA, V = 10V 5.0 6.0 7.5 Volts GE(th) C CE Collector-Emitter Saturation Voltage V I = 600A, V = 15V, T = 25C 1.7 2.2 Volts CE(sat) C GE j I = 600A, V = 15V, T = 125C 1.7 Volts C GE j Total Gate Charge Q V = 300V, I = 600A, V = 15V 2400 nC G CC C GE Emitter-Collector Voltage** V I = 600A, V = 0V 2.6 Volts EC E GE Dynamic Electrical Characteristics, T = 25 C unless otherwise specified j Characteristics Symbol Test Conditions Min. Typ. Max. Units Input Capacitance C 90 nf ies Output Capacitance C V = 10V, V = 0V 11.0 nf oes CE GE Reverse Transfer Capacitance C 3.6 nf res Inductive Turn-on Delay Time t 500 ns d(on) Load Rise Time t V = 300V, I = 600A, 300 ns r CC C Switch Turn-off Delay Time t V = V = 15V, R = 4.2, 750 ns d(off) GE1 GE2 G Time Fall Time t Inductive Load 300 ns f Diode Reverse Recovery Time** t Switching Operation, 250 ns rr Diode Reverse Recovery Charge** Q I = 600A 8.7 C rr E *Pulse width and repetition rate should be such that device junction temperature (T ) does not exceed T rating. j j(max) **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). ***T measured point is just under the chips. If this value is used, R should be measured just under the chips. C th(f-a) 2 Rev. 09/09