CM600HA-24A Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Single IGBT www.pwrx.com A-Series Module 600 Amperes/1200 Volts H G F E D J W - DIA. (4 TYP.) AE K AG C AF E Q Y M L P N E C X Y G Z AB AF AA C K D AH AJ B R A Description: U - THD. V -THD. Powerex IGBT Modules (2 TYP.) (2 TYP.) are designed for use in switching applications. Each module consists of one IGBT Transis- S AD T AC tor in a single configuration with a reverse connected super-fast recovery free-wheel diode. All components and interconnects E C are isolated from the heat sinking E baseplate, offering simplified system assembly and thermal G management. Outline Drawing and Circuit Diagram Features: Dimensions Inches Millimeters Dimensions Inches Millimeters Low Drive Power A 4.25 108.0 T 1.02+0.04/-0.02 25.8+1/-0.5 Low V CE(sat) B 3.660.01 93.00.25 U M6 Metric M6 Discrete Super-Fast Recovery C 0.63 16.0 V M4 Metric M4 Free-Wheel Diode D 0.30 7.5 W 0.256 Dia. 6.5 Dia. Isolated Baseplate for Easy E 0.69 17.5 X 0.79 20.0 Heat Sinking F 1.14 29.0 Y 0.35 9.0 Applications: G 0.79 20.0 Z 0.43 11.0 DC Chopper H 0.94 24.0 AA 0.53 13.55 Inverter J 0.55 13.9 AB 0.27 7.0 UPS K 0.24 6.0 AC 0.98 25.0 Forklift L 2.44 62.0 AD 1.38 35.0 M 1.890.01 48.00.25 AE 0.45 11.5 Ordering Information: N 0.39 10.0 AF 0.25.0 Example: Select the complete P 0.39 20.0 AG 0.25 6.5 part module number you Q 0.51 23.0 AH 0.12 3.2 desire from the table below -i.e. R 0.33 8.5 AJ 0.32 8.2 CM600HA-24A is a 1200V (V ), CES S 1.42+0.04/-0.02 36.0+1/-0.5 600 Ampere Single IGBT Power Module. Type Current Rating V CES Amperes Volts (x 50) CM 600 24 06/13 Rev. 2 1Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM600HA-24A Single IGBT A-Series Module 600 Amperes/1200 Volts Maximum Ratings, T = 25C unless otherwise specified j Characteristics Symbol Rating Units Collector-Emitter Voltage (V = 0V) V 1200 Volts GE CES Gate-Emitter Voltage (V = 0V) V 20 Volts CE GES *2,*4 Collector Current (DC, T = 80C) I 600 Amperes C C *3 Collector Current (Pulse, Repetitive) I 1200 Amperes CRM *2,*4 Total Power Dissipation (T = 25C) P 3670 Watts C tot *2 *1 Emitter Current I 600 Amperes E *3 *1 Emitter Current (Pulse, Repetitive) I 1200 Amperes ERM Isolation Voltage (Charged Part to Baseplate, RMS, f = 60Hz, AC 1 minute) V 2500 Volts ISO Junction Temperature T -40 ~ +150 C j Storage Temperature T -40 ~ +125 C stg *1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi). *2 The device junction temperature is T rating (150C) or less. j(max) *3 Pulse width and repetition rate should be such that device junction temperature (T ) j 0 0 does not exceed T rating. j(max) *4 Case temperature (T ) is measured on the surface of the baseplate just under the chip. C Refer to the figure to the right for chip location. Di1 Tr1 19.8 Di1 21.9 Tr1 Di1 Tr1 32.5 34.6 Di1 Tr1 44.8 Di1 Tr1 47.3 Tr1 Di1 LABEL SIDE Each mark points to the center position of each chip. Tr1: IGBT Di1: FWDi 2 06/13 Rev. 2 0 0 23.7 27.2 33.7 36.4 67.3 74.7 76.5 84.3