CM400HA-24A Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Single IGBTMOD www.pwrx.com A-Series Module 400 Amperes/1200 Volts H G F E D J W - DIA. (4 TYP.) AE K AG C AF E Q M L Y P N E C X Y G Z AB AF AA C AH K D AJ B R A Description: U - THD. V -THD. Powerex IGBTMOD Modules (2 TYP.) (2 TYP.) are designed for use in switching applications. Each module consists of one IGBT Transis- AD S T AC tor in a single configuration with a reverse connected super-fast recovery free-wheel diode. All components and interconnects E C are isolated from the heat sinking E baseplate, offering simplified system assembly and thermal G management. Features: Outline Drawing and Circuit Diagram Low Drive Power Low V CE(sat) Dimensions Inches Millimeters Dimensions Inches Millimeters Discrete Super-Fast Recovery A 4.25 108.0 T 1.02+0.04/-0.02 25.8+1/-0.5 Free-Wheel Diode B 3.660.01 93.00.25 U M6 Metric M6 Isolated Baseplate for Easy C 0.63 16.0 V M4 Metric M4 Heat Sinking D 0.30 7.5 W 0.256 Dia. 6.5 Dia. Applications: E 0.69 17.5 X 0.79 20.0 DC Chopper F 1.14 29.0 Y 0.35 9.0 Inverter G 0.79 20.0 Z 0.43 11.0 UPS Forklift H 0.94 24.0 AA 0.53 13.55 J 0.55 13.9 AB 0.28 7.0 Ordering Information: Example: Select the complete K 0.24 6.0 AC 0.98 25.0 part module number you L 2.44 62.0 AD 1.38 35.0 desire from the table below -i.e. M 1.890.01 48.00.25 AE 0.45 11.5 CM400HA-24A is a 1200V (V ), CES N 0.39 10.0 AF 0.2 5.0 400 Ampere Single IGBTMOD Power Module. P 0.79 20.0 AG 0.26 6.5 Type Current Rating V Q 0.91 23.0 AH 0.13 3.2 CES Amperes Volts (x 50) R 0.33 8.5 AJ 0.32 8.2 CM 400 24 S 1.42+0.04/-0.02 36.0+1/-0.5 01/10 Rev. 1 1Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM400HA-24A Single IGBTMOD A-Series Module 400 Amperes/1200 Volts Absolute Maximum Ratings, T = 25C unless otherwise specified j Ratings Symbol CM400HA-24A Units Junction Temperature T 40 to 150 C j Storage Temperature T 40 to 125 C stg Collector-Emitter Voltage (G-E Short) V 1200 Volts CES Gate-Emitter Voltage (C-E Short) V 20 Volts GES 4 Collector Current (DC, T = 87C)* I 400 Amperes C C 2 Peak Collector Current (Pulse, Repetitive)* I 800 Amperes CM 2, 4 Maximum Collector Dissipation (T = 25C)* * P 2350 Watts C C 1 Emitter Current (T = 25C) I * 400 Amperes C E 2 1 Peak Emitter Current (Pulse, Repetitive)* I * 800 Amperes EM Mounting Torque, M6 Main Terminal 26 in-lb Mounting Torque, M6 Mounting 26 in-lb Mounting Torque, M4 G(E) Terminal 13 in-lb Weight 480 Grams Isolation Voltage (Main Terminal to Baseplate, f = 60Hz, AC 1 min.) V 2500 Volts ISO Electrical Characteristics, T = 25C unless otherwise specified j Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current I V = V , V = 0V 1.0 mA CES CE CES GE Gate Leakage Current I V = V , V = 0V 1.0 A GES GE GES CE Gate-Emitter Threshold Voltage V I = 40mA, V = 10V 6.0 7.0 8.0 Volts GE(th) C CE 3 Collector-Emitter Saturation Voltage V I = 400A, V = 15V, T = 25C* 2.1 3.0 Volts CE(sat) C GE j 3 I = 400A, V = 15V, T = 125C* 2.4 Volts C GE j 3 Forward Transfer Admittance I = 400A, V = 10V* 120 sec fs C CE Input Capacitance C 70 nf ies Output Capacitance C V = 10V, V = 0V 6 nf oes CE GE Reverse Transfer Capacitance C 1.4 nf res Total Gate Charge Q V = 600V, I = 400A, V = 15V 2000 nC G CC C GE Inductive Turn-on Delay Time t 550 ns d(on) Load Rise Time t V = 600V, I = 400A, 180 ns r CC C Switch Turn-off Delay Time t V = 15V, R = 0.78, 600 ns d(off) GE G Time Fall Time t Inductive Load 350 ns f 1 Diode Reverse Recovery Time t * I = 400A 250 ns rr E 1 Diode Reverse Recovery Charge Q * 14.7 C rr 1 3 Emitter-Collector Voltage V * I = 400A, V = 0V* 3.8 Volts EC E GE External Gate Resistance R 0.78 10 G *1 Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). *2 Pulse width and repetition rate should be such that device junction temperature (T ) does not exceed T rating. j j(max) *3 Pulse width and repetition rate should be such as to cause negligible temperature rise. *4 Case temperature (T ), and heatsink temperature (T ) measured point is just under the chips. C f 2 01/10 Rev. 1