CM450DY-24S Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Dual IGBTMOD www.pwrx.com S-Series Module 450 Amperes/1200 Volts A D L K (4 PLACES) K K V G G2 E2 C2E1 E2 C1 B E H N J E1 G1 M G (3 PLACES) X Z F F Description: Y U Powerex Dual IGBTMOD Q Q V P P P Modules are designed for use in switching applications. Each W module consists of two IGBT C LABEL S R Transistors in a half-bridge configuration with each transistor having a reverse-connected G2 Tolerance Otherwise Specified E2 Division of Dimension Tolerance super-fast recovery free-wheel 0.5 to 3 0.2 Tr2 Di1 diode. All components and C2E1 E2 over 3 to 6 0.3 C1 Tr1 over 6 to 30 0.5 interconnects are isolated from the Di2 over 30 to 120 0.8 E1 heat sinking baseplate, offering over 120 to 400 1.2 G1 simplified system assembly and thermal management. Outline Drawing and Circuit Diagram Features: Low Drive Power Dimensions Inches Millimeters Dimensions Inches Millimeters Low V CE(sat) N 1.18 30.0 A 4.33 110.0 Discrete Super-Fast Recovery P 0.71 18.0 B 3.15 80.0 Free-Wheel Diode Isolated Baseplate for Easy Q 0.28 7.0 C 1.14+0.04/-0.02 29.0+1.0/-0.5 Heat Sinking R 0.83 21.2 D 3.660.01 93.00.25 S 0.33 8.5 E 2.440.01 62.00.25 Applications: AC Motor Control T 0.0157 0.4 F 0.98 25.0 Motion/Servo Control U 0.110 2.8 G 0.24 6.0 UPS V 0.16 4.0 H 0.59 15.0 Welding Power Supplies W 0.30 7.5 J 0.81 20.5 Laser Power Supplies X 0.21 5.3 K 0.55 14.0 Ordering Information: Y 0.47 12.0 L 0.26 Dia. Dia. 6.5 Example: Select the complete Z 0.85 21.5 M M6 Metric M6 module number you desire from the table - i.e. CM450DY-24S is a 1200V (V ), 450 Ampere Dual CES IGBTMOD Power Module. Current Rating V CES Type Amperes Volts (x 50) CM 450 24 08/13 Rev. 2 1Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM450DY-24S Dual IGBTMOD S-Series Module 450 Amperes/1200 Volts Absolute Maximum Ratings, T = 25C unless otherwise specified j Inverter Part IGBT/FWDi Characteristics Symbol Rating Units Collector-Emitter Voltage (V = 0V) V 1200 Volts GE CES Gate-Emitter Voltage (V = 0V) V 20 Volts CE GES *2,*8 Collector Current (DC, T = 125C) I 410 Amperes C C *3 Collector Current (Pulse, Repetitive) I 900 Amperes CRM *2,*4 Total Power Dissipation (T = 25C) P 3330 Watts C tot *2,*4,*8 *1 Emitter Current (T = 25C) I 410 Amperes C E *3 *1 Emitter Current (Pulse, Repetitive) I 900 Amperes ERM Module Characteristics Symbol Rating Units Maximum Junction Temperature T +175 C j(max) Operating Junction Temperature T -40 to +150 C j(op) Storage Temperature T -40 to +125 C stg ,*2 Case Temperature T -40 to +125 C C Isolation Voltage (Terminals to Baseplate, RMS, f = 60Hz, AC 1 minute) V 2500 Volts ISO *1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi). *2 Case temperature (T ) and heatsink temperature (T ) is measured on the surface C s (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. 0 0 The heatsink thermal resistance should be measured just under the chips. *3 Pulse width and repetition rate should be such that device junction temperature (T ) j does not exceed T rating. Tr1 21.5 j(max) Di1 21.6 *4 Junction temperature (T ) should not increase beyond maximum junction j Tr2 Tr2 Tr2 33.3 Tr1 35.0 Di1 temperature (T ) rating. j(max) 48.2 45.6 *8 This model has 450A size IGBT and FWDi chips. This package limitation is based Di2 Di2 Di2 Di1 Tr1 48.4 on package issue. LABEL SIDE Tr1 / Tr2: IGBT, Di1 / Di2: FWDi Each mark points to the center position of each chip. 2 08/13 Rev. 2 0 0 20.4 20.6 33.6 33.6 46.8 46.6 66.2 77.4