CM400DU-24NFH Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Dual IGBTMOD www.pwrx.com NFH-Series Module 400 Amperes/1200 Volts A M D M V L H J E B C2E1 E2 C1 H U R W N Y X L Description: AC Q Q P Powerex IGBTMOD Modules are AD S - NUTS (3 TYP) designed for use in high T - (4 TYP) frequency applications 30 kHz V for hard switching applications G G AA Z Z Z and 60 to 70 kHz for soft switching K K K applications. Each module AB M consists of two IGBT Transistors C in a half-bridge configuration with F LABEL each transistor having a reverse- connected super-fast recovery free-wheel diode. All components and interconnects are isolated from G2 Tolerance Otherwise Specified (mm) E2 the heat sinking baseplate, offering Division of Dimension Tolerance Di1 0.5 to 3 0.2 simplified system assembly and Tr2 over 3 to 6 0.3 E2 C1 C2E1 thermal management. over 6 to 30 0.5 Tr1 over 30 to 120 0.8 Di2 over 120 to 400 1.2 Features: E1 G1 Low E SW(off) Discrete Super-Fast Recovery Free-Wheel Diode Outline Drawing and Circuit Diagram Isolated Baseplate for Easy Dimensions Inches Millimeters Dimensions Inches Millimeters Heat Sinking A 4.33 110.0 Q 0.98 25.0 Applications: B 3.15 80.0 R 1.23 31.4 Power Supplies C 1.14+0.04/-0.01 29.0+1.0/-0.5 S M6 Metric M6 Induction Heating D 3.660.01 93.00.25 T 0.26 Dia. 6.5 Dia. Welders E 2.440.01 62.00.25 U 0.4 10.0 F 0.83 21.2 V 0.16 4.0 Ordering Information: G 0.28 7.0 W 0.87 22.2 Example: Select the complete H 0.24 6.0 X 0.72 18.25 part module number you desire J 0.59 15.0 Y 0.36 9.25 from the table below -i.e. K 0.55 14.0 Z 0.71 18.0 CM400DU-24NFH is a 1200V (V ), 400 Ampere Dual L 0.35 9.0 AA 0.11 2.8 CES IGBTMOD Power Module. M 0.33 8.5 AB 0.29 7.5 N 0.69 17.5 AC 0.21 5.3 Type Current Rating V CES P 0.85 21.5 AD 0.47 12.0 Amperes Volts (x 50) CM 400 24 7/11 Rev. 2 1 G1 E1 E2 G2Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM400DU-24NFH Dual IGBTMOD NFH-Series Module 400 Amperes/1200 Volts Absolute Maximum Ratings, T = 25 C unless otherwise specified j Ratings Symbol CM400DU-24NFH Units Junction Temperature T 40 to 150 C j Storage Temperature T 40 to 125 C stg Collector-Emitter Voltage (G-E Short) V 1200 Volts CES Gate-Emitter Voltage (C-E Short) V 20 Volts GES Collector Current (T = 25C) I 400* Amperes C C Peak Collector Current I 800* Amperes CM Emitter Current** (T = 25C) I 400* Amperes C E Peak Emitter Current** I 800* Amperes EM Maximum Collector Dissipation (T = 25C, T 150C) P 1040 Watts C j C Maximum Collector Dissipation (T = 25C, T 150C) P 2500 Watts C j C Mounting Torque, M6 Main Terminal 40 in-lb Mounting Torque, M6 Mounting 40 in-lb Weight 580 Grams Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V 2500 Volts ISO Static Electrical Characteristics, T = 25 C unless otherwise specified j Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current I V = V , V = 0V 1.0 mA CES CE CES GE Gate Leakage Current I V = V , V = 0V 1.4 A GES GE GES CE Gate-Emitter Threshold Voltage V I = 40mA, V = 10V 4.5 6.0 7.5 Volts GE(th) C CE Collector-Emitter Saturation Voltage V I = 400A, V = 15V, T = 25C 5.0 6.5 Volts CE(sat) C GE j I = 400A, V = 15V, T = 125C 5.0 Volts C GE j Total Gate Charge Q V = 600V, I = 400A, V = 15V 1800 nC G CC C GE Emitter-Collector Voltage** V I = 400A, V = 0V 3.5 Volts EC E GE Dynamic Electrical Characteristics, T = 25 C unless otherwise specified j Characteristics Symbol Test Conditions Min. Typ. Max. Units Input Capacitance C 63 nF ies Output Capacitance C V = 10V, V = 0V 5.3 nF oes CE GE Reverse Transfer Capacitance C 1.2 nF res Inductive Turn-on Delay Time t 300 ns d(on) Load Rise Time t V = 600V, I = 400A, 100 ns r CC C Switch Turn-off Delay Time t V = V = 15V, R = 0.78, 500 ns d(off) GE1 GE2 G Time Fall Time t Inductive Load 150 ns f Diode Reverse Recovery Time** t Switching Operation, 250 ns rr Diode Reverse Recovery Charge** Q I = 400A 16 C rr E * Pulse width and repetition rate should be such that device junction temperature (T ) does not exceed T rating. j j(max) **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). 2 7/11 Rev. 2