CM300DY-24NF Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Dual IGBTMOD NF-Series Module 300 Amperes/1200 Volts T MEASURED POINT C (BASEPLATE) A F F W G2 G E2 B H E N J E1 G G1 C2E1 E2 C1 Description: Powerex IGBTMOD Modules L K K K are designed for use in switching (4 PLACES) M NUTS applications. Each module D (3 PLACES) consists of two IGBT Transistors in a half-bridge conguration with T THICK P P P U WIDTH Q Q each transistor having a reverse- connected super-fast recovery free-wheel diode. All components S and interconnects are isolated C V LABEL R from the heat sinking baseplate, offering simplied system assem- bly and thermal management. G2 Features: E2 Low Drive Power Low V CE(sat) Discrete Super-Fast Recovery C2E1 E2 C1 Free-Wheel Diode Isolated Baseplate for Easy E1 Heat Sinking G1 Applications: AC Motor Control Outline Drawing and Circuit Diagram UPS Battery Powered Supplies Dimensions Inches Millimeters Dimensions Inches Millimeters M M6 Metric M6 A 4.33 110.0 Ordering Information: N 1.18 30.0 B 3.15 80.0 Example: Select the complete part module number you de- P 0.71 18.0 C 1.14+0.04/-0.02 29.0+1.0/-0.5 sire from the table below -i.e. Q 0.28 7.0 D 3.660.01 93.00.25 CM300DY-24NF is a 1200V R 0.83 21.2 E 2.440.01 62.00.25 (V ), 300 Ampere Dual IGBT- CES S 0.33 8.5 F 0.98 25.0 MOD Power Module. Type Current Rating V T 0.02 0.5 G 0.24 6.0 CES Amperes Volts (x 50) U 0.110 2.8 H 0.59 15.0 CM 300 24 V 0.16 4.0 J 0.81 20.5 W 0.85 21.5 K 0.55 14.0 L 0.26 Dia. Dia. 6.5 1Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM300DY-24NF Dual IGBTMOD NF-Series Module 300 Amperes/1200 Volts Absolute Maximum Ratings, T = 25 C unless otherwise specied j Ratings Symbol CM300DY-24NF Units Junction Temperature T 40 to 150 C j Storage Temperature T 40 to 125 C stg Collector-Emitter Voltage (G-E Short) V 1200 Volts CES Gate-Emitter Voltage (C-E Short) V 20 Volts GES Collector Current*** (DC, T = 111C) I 300 Amperes C C Peak Collector Current I 600* Amperes CM Emitter Current** (T = 25C) I 300 Amperes C E Peak Emitter Current** I 600* Amperes EM Maximum Collector Dissipation (T = 25C, T 150C) P 1130 Watts C j C Mounting Torque, M6 MainTerminal 40 in-lb Mounting Torque, M6 Mounting 40 in-lb Weight 580 Grams Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V 2500 Volts ISO Static Electrical Characteristics, T = 25 C unless otherwise specied j Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current I V = V , V = 0V 1.0 mA CES CE CES GE Gate Leakage Current I V = V , V = 0V 0.5 A GES GE GES CE Gate-Emitter Threshold Voltage V I = 30mA, V = 10V 6.0 7.0 8.0 Volts GE(th) C CE Collector-Emitter Saturation Voltage V I = 300A, V = 15V, T = 25C 1.8 2.5 Volts CE(sat) C GE j I = 300A, V = 15V, T = 125C 2.0 Volts C GE j Total Gate Charge Q V = 600V, I = 300A, V = 15V 2000 nC G CC C GE Emitter-Collector Voltage** V I = 300A, V = 0V 3.2 Volts EC E GE Dynamic Electrical Characteristics, T = 25 C unless otherwise specied j Characteristics Symbol Test Conditions Min. Typ. Max. Units Input Capacitance C 70 nf ies Output Capacitance C V = 10V, V = 0V 6.0 nf oes CE GE Reverse Transfer Capacitance C 1.4 nf res Inductive Turn-on Delay Time t 500 ns d(on) Load Rise Time t V = 600V, I = 300A, 120 ns r CC C Switch Turn-off Delay Time t V = V = 15V, R = 1.0, 600 ns d(off) GE1 GE2 G Time Fall Time t Inductive Load 350 ns f Diode Reverse Recovery Time** t Switching Operation, 250 ns rr Diode Reverse Recovery Charge** Q I = 300A 13 C rr E *Pulse width and repetition rate should be such that device junction temperature (T ) does not exceed T rating. j j(max) **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). ***T measured point is just under the chips. If this value is used, R should be measured just under the chips. C th(f-a) 2