AG603-89G InGaP HBT Gain Block Applications Mobile Infrastructure CATV / FTTX W-LAN / ISM WCDMA / LTE SOT-89 Package Product Features Functional Block Diagram DC 3000 MHz Backside Paddle - GND +19.5 dBm P1dB at 900 MHz +33 dBm OIP3 at 900 MHz 18.5 dB Gain at 900 MHz Single Voltage Supply SOT-89 package Internally matched to 50 1 2 3 RF IN GND RF OUT / V CC General Description Pin Configuration The AG603-89G is a general-purpose buffer amplifier Pin No. Label that offers high dynamic range in a low-cost, surface- 1 RF IN mount package. At 900MHz, the AG603-89 typically 2 GND provides 14dB of gain, +33dBm OIP3, and +18.5dBm 3 RF OUT/V P1dB. This amplifier combines dependable performance CC with consistent quality to maintain an MTTF exceeding Backside Paddle GND 1000 years at mounting temperatures of +85C. The AG603-89G consists of Darlington pair amplifiers using the high reliability InGaP/GaAs HBT process technology and only requires DC-blocking capacitors, a bias resistor, and an inductive RF choke for operation. The broadband MMIC amplifier can be directly applied to various current and next generation wireless technologies such as GSM, CDMA, W-CDMA and LTE. In addition, the AG603-89 will work for other various applications within the DC to 3.5 GHz frequency range such as CATV. The AG603-89G is housed in a lead-free/green/RoHS- Ordering Information compliant SOT-89 industry-standard SMT package. Part No. Description AG603-89G InGaP/GaAs HBT Gain Block AG603-89PCB 0.7-2.4 GHz Evaluation Board Standard T/R size = 3000 pieces on a 13 reel Datasheet: Rev B 6/26/14 Disclaimer: Subject to change without notice - 1 of 9 - 2014 TriQuint www.triquint.com AG603GAG603-89G InGaP HBT Gain Block Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Min Typ Max Units Storage Temperature 55 to 150C T 40 +85 C CASE 6 RF Input Power, CW, 50, T=25C +10 dBm Tj for >10 hours MTTF +177 C Device Voltage (V ) +7 V Electrical specifications are measured at specified test CC conditions. Specifications are not guaranteed over all Operation of this device outside the parameter ranges recommended operating conditions. given above may cause permanent damage. Electrical Specifications Test conditions unless otherwise noted: V =+6V, R =11.2, I =75mA (typ.), T = +25C, 50 system SUPPLY BIAS CC CASE Parameter Conditions Min Typ Max Units Operational Frequency Range DC 3500 MHz f=900 MHz 18.5 dB Gain f=1900 MHz 15.5 16.5 17.5 dB Input Return Loss 18 dB Output Return Loss 14 dB f=900 MHz +19.3 dBm Output P1dB f=1900 MHz +18.7 dBm +33.2 dBm f=900 MHz Pout=+2 dBm/tone, Output IP3 f= 10 MHz f=1900 MHz +33.0 dBm Output IP2 +45 dBm Noise Figure 3.9 dB Device Voltage (V ) 5.16 V CC Device Current (I ) 75 mA CC (1) Thermal Resistance, ( ) Junction to case 154 C/W jc Notes: 1. Thermal path is from the device junction to the backside ground paddle. Datasheet: Rev B 6/26/14 Disclaimer: Subject to change without notice - 2 of 9 - 2014 TriQuint www.triquint.com