QPA2212D 27.531 GHz 25 Watt GaN Power Amplifier Product Overview Qorvo s QPA2212D is a Ka-band power amplifier fabricated on Qorvo s 0.15um GaN on SiC process (QGaN15). Operating between 27.5 and 31 GHz, it achieves 10 W linear power with 25 dBc intermodulation distortion products and 22 dB small signal gain. Saturated output power is 25 W with power-added efficiency of 25%. QPA2212D is ideally suited to support satellite communications and 5G infrastructure. To simplify system integration, the QPA2212D is fully matched to 50 ohms with integrated DC blocking caps on Key Features both I/O ports. Frequency Range: 27.531 GHz The QPA2212D is 100% DC and RF tested on-wafer to P (P =25 dBm): > 43.4 dBm SAT IN ensure compliance to electrical specifications. PAE (P =25 dBm): > 25 % IN Lead-free and RoHS compliant. Power Gain (PIN=25 dBm): > 18.4 dB IMD3 (at 37 dBm/tone): < 25 dBc Small Signal Gain: 22 dB Bias: V = 22 V, I = 460 mA D DQ Die Dimensions: 3.630 x 4.792 x 0.050 mm Performance is typical across frequency. Please reference electrical specification table and data plots for more details. Functional Block Diagram Applications VG12 VG3 VD12 VD3 5G Infrastructure Satellite Communications RF IN RF OUT Ordering Information Part No. Description VG12 VG3 VD12 VD3 27.531 GHz 10 Watt GaN Amplifier QPA2212D (10 Pcs.) QPA2212DEVB04 Evaluation Board for QPA2212D Data Sheet Rev. C, April 2020 Subject to change without notice 1 of 22 www.qorvo.com QPA2212D 27.5 31 GHz 25 Watt GaN Power Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Value/Range Parameter Value/Range Drain Voltage (VD) 29.5 V Drain Voltage (VD) 22 V Gate Voltage Range (V ) 5 V to 0 V Drain Current (I ) 460 mA G DQ Drain Current (ID) 5860 mA Operating Temperature 40 to +85 C Gate Current (IG) See plot pg. 17 Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all Power Dissipation (P ), 85 C 80.3 W DISS recommended operating conditions. Input Power (P ), 50 , IN 34 dBm V =22 V, I =460 mA, 85 C D DQ Input Power (P ), 3:1 VSWR, IN 34 dBm VD=22 V, IDQ=460 mA, 85 C Soldering Temperature (30 s max.) 320 C Storage Temperature 55 to +150 C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Electrical Specifications Parameter Min Typ Max Units Operational Frequency 27.5 31 GHz 27.5GHz 44.0 dBm Output Power (P =25 dBm) 29 GHz 44.2 dBm IN 31 GHz 43.9 dBm 27.5GHz 27.2 % Power Added Efficiency (P =25 dBm) 29 GHz 26.9 % IN 31 GHz 25.3 % 27.5GHz 23.0 dB Small Signal Gain 29 GHz 22.4 dB 31 GHz 21.7 dB 27.5GHz 9 dB Input Return Loss 29 GHz 17 dB 31 GHz 29 dB 27.5GHz 9 dB Output Return Loss 29 GHz 14 dB 31 GHz 9 dB 27.5 GHz 38 dBc IMD3 (POUT/Tone = 37 dBm, 10 MHz tone 29 GHz 38 dBc spacing) 31 GHz 29 dBc POUT Temp. Coeff. (85C to25 C, PIN = 25 dBm)) 0.033 dB/C Sm. Sig. Gain Temp. Coefficient (85 C to40 C) 0.119 dB/C Test conditions, unless otherwise noted: T = +25 C, V = 22 V, I = 460 mA D DQ Data Sheet Rev. C, April 2020 Subject to change without notice 2 of 22 www.qorvo.com