QPA2610 2 Watt X-Band Power Amplifier Product Overview Qorvo s QPA2610 is a packaged, high performance power amplifier fabricated on Qorvo s production 0.15 um GaN on SiC process (QGaN15). Covering 8.5-10.5 GHz, the QPA2610 provides > 2 W of saturated output power and 23 dB of large-signal gain while achieving an impressive 47% power-added efficiency. 5 mm x 5 mm plastic overmold QFN Packaged in a small 5 x 5 mm plastic overmold QFN, tight lattice spacing requirements for phased array radar Key Features applications is easily supported. RF input and output ports Frequency Range: 8.5 10.5 GHz are matched to 50 and include integrated DC blocking capacitors. QPA2610 is part of a three-amplifier family and Output Power (PIN = 10 dBm): > 33 dBm is pin compatible to QPA2612 and QPA2611. PAE (P = 10 dBm): > 47 % IN Small Signal Gain: > 37.5 dB Lead-free and RoHS compliant. Input Return Loss: > 14 dB Output Return Loss: > 12 dB Recommended Bias: VD = 20 V, IDQ = 56 mA Package Size: 5.0 mm x 5.0 mm x 0.85 mm Applications Functional Block Diagram Radar Communications VG VD Satcom RF IN RF OUT Ordering Information Part No. Description QPA2610 2 Watt X-Band Power Amplifier QPA2610TR7 500 pcs. on 7 inch reel QPA2610EVB QPA2610 Evaluation Board Top View Data Sheet Rev. C, August 2020 Subject to change without notice 1 of 24 www.qorvo.com 2020 Qorvo US, Inc. All rights reserved. Confidential QPA2610 2 Watt X-Band Power Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Typ Drain Voltage (V ) 29.5 V Drain Voltage (V ) 20 V D D Gate Voltage Range (VG) 4 to 0 V Drain Current (IDQ) 56 mA Drain Current (I ) 700 mA Drain Current Under RF Drive (I ) See plots pg. 4 D D DRIVE Gate Current (IG) See plot pg. 16 Gate Voltage Range (VG) 2.8 to 2.0 V Power Dissipation (P ), T = 85 C 8.8 W Gate Current Under RF Drive (I ) See plots pg. 4 DISS BASE G DRIVE Electrical specifications are measured at specified test conditions. Input Power (PIN), Pulsed (100us/10%), 18 dBm Specifications are not guaranteed over all recommended operating 50 , VD = 20 V, TBASE = 85 C conditions. Input Power (PIN), Pulsed (100us/10%), 18 dBm VSWR 3:1, VD = 20 V, TBASE = 85 C Mounting Temperature (30 seconds max.) 260 C Storage Temperature 55 to 150 C Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Electrical Specifications Parameter Conditions Min Typ Max Units Operational Frequency 8.5 10.5 GHz Output Power (PIN = 10 dBm) Pulsed VD 33.9 dBm Power Added Efficiency (P = 10 dBm) Pulsed V 47.4 % IN D Small Signal Gain (CW) 38.5 dB Input Return Loss (CW) 19 dB Output Return Loss (CW) 14 dB RD 3 Order IMD (PIN/Tone = 0 dBm) 10 MHz tone spacing 15 dBc POUT Temp. Coeff. (85C to25 C, PIN = 10 dBm)) 0.21 dB/C Sm. Sig. Gain Temp. Coefficient (85 C to40 C) 0.09 dB/C Gate Leakage Current VD = 10 V, VG = 3.7 V 1.23 mA Test conditions, unless otherwise noted: T = +25 C, V = 20 V, I = 56 mA, Pulse Width = 100 us, Duty Cycle = 10% D DQ Data Sheet Rev. C, August 2020 Subject to change without notice 2 of 24 www.qorvo.com 2020 Qorvo US, Inc. All rights reserved. Confidential