Preliminary QPA2962 2 20 GHz 10 Watt GaN Amplifier Product Overview Qorvo s QPA2962 is a wideband power amplifier fabricated on Qorvo s QGaN15 GaN on SiC process. The QPA2962 operates from 2 to 20 GHz, providing 10 W of saturated power with 13 dB large signal gain and 22 % power-added efficiency at 22 V drain bias. RF ports are matched to 50 , including integrated DC blocking capacitors and a RF choke. Packaged in a 5 x 5 mm air cavity laminate package, QPA2962 provides designers with a convenient SMT Key Features compatible device that delivers a valuable combination of wideband power, gain and efficiency while reducing size Frequency Range: 2 20 GHz and cost. QPA2962 is ideally suited for wideband PSAT (PIN=27 dBm): 40 dBm communications systems, electronic warfare, test PAE (P =27 dBm): 22 % IN instrumentation and radar applications across both military and commercial markets. Power Gain (PIN=27 dBm): 13 dBm QPA2962 is 100% DC and RF tested on-wafer to ensure Small Signal Gain: 19 dB compliance to electrical specifications. Bias: V = 22 V, I = 1680 mA D DQ Package Dimensions: 5.0 x 5.0 x 1.455 mm Lead free and RoHS compliant. Performance is typical across frequency. Please reference electrical specification table and data plots for more details. Functional Block Diagram Applications Communication Systems V V V G D1 D2 5 4 3 Electronic Warfare Radar Test Equipment Ordering Information Part No. Description QPA2962 2 - 20 GHz 10 Watt GaN Amplifier RF RF IN OUT 1 2 QPA2962TR7 250 pieces on a 7 reel (standard) QPA2962EVB Evaluation Board for QPA2962 Data Sheet Rev. A, Sept. 2020 Subject to change without notice 1 of 27 www.qorvo.com 2020 Qorvo US, Inc. All rights reserved. Confidential Preliminary QPA2962 2 20 GHz 10 Watt GaN Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Value/ Range Parameter Min Typ Max Units Drain Voltage (V ) 29.5 V Drain Voltage (VD) 22 V D Drain Current, Quiescent (I ) 1680 mA DQ Gate Voltage Range (V ) 4 to 0 V G See charts page 6, 7, Drain Current (ID) 2848 mA Drain Current, RF (I ) mA D Drive 10, 13, 16 Gate Current (IG) 10 mA Gate Voltage Typ. Range (V ) 1.2 to -2.5 V G Power Dissipation (PDISS), TBASE = 85C 40 W Gate Current, RF (I ) See charts page 6 - 7 mA G Drive Input Power (PIN), 50 , VD = 22 V, IDQ = 33 dBm Operating Temp. Range, T 40 +25 +85 C BASE 1680 mA, TBASE = 85C Input Power (PIN), 3:1 VSWR, VD = 22 V, Electrical specifications are measured at specified test 32 dBm I = 1680 mA, T = 85C conditions. Specifications are not guaranteed over all DQ BASE recommended operating conditions. Mounting Temperature (30 seconds max) 260 C Storage Temperature 55 to 150 C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Electrical Specifications (1) (2) Parameter Conditions Min Typ Max Units Operational Frequency Range 2 20 GHz PIN = +27 dBm, Frequency = 2 - 18 GHz 40 Output Power at Saturation, P dBm SAT PIN = +27 dBm, Frequency = 19 - 20 GHz 39 PIN = +27 dBm, Frequency = 2 - 18 GHz 22 Power Added Efficiency, PAE % PIN = +27 dBm, Frequency = 19 - 20 GHz 15 Small Signal Gain, S21 19 dB Input Return Loss, IRL 10 dB Output Return Loss, ORL 7 dB PSAT Temperature Coefficient TDIFF = 40C to +85C PIN = +27 dBm 0.009 dBm/C S21 Temperature Coefficient TDIFF = 40C to +85C 0.04 dB/C Notes: 1. Test conditions unless otherwise noted: CW, VD = 22 V, IDQ = 1680 mA, adjusting VG, TBASE=+25C, Z0=50 2. T is back side of package BASE Data Sheet Rev. A, Sept. 2020 Subject to change without notice 2 of 27 www.qorvo.com 2020 Qorvo US, Inc. All rights reserved. Confidential