QPA3069 2.7 3.5 GHz 100 W GaN Power Amplifier Product Overview Qorvos QPA3069 is a packaged, high-power S-band amplifier fabricated on Qorvos production 0.25 um GaN on SiC process (QGaN25). Covering 2.73.5 GHz, the QPA3069 provides 50 dBm of saturated output power and 25 dB of large-signal gain while achieving 53% power- added efficiency. The QPA3069 is packaged in a 7 mm x 7 mm 48-pin plastic overmolded package. It can support a variety of operating conditions to best support system requirements. Key Features With good thermal properties, it can support a range of bias voltages. Frequency Range: 2.73.5 GHz PSAT (PIN=25 dBm): > 50 dBm The QPA3069 MMIC has DC blocking capacitors on both PAE (P =25 dBm): > 53 % IN RF ports, which are matched to 50 ohms. The QPA3069 is ideal for military radar systems. Power Gain (PIN=25 dBm): > 25 dB Bias: VD = 30 V, IDQ = 300 mA, PIN = 25 dBm Lead-free and RoHS compliant. Package Dimensions:7.00 x 7.00 x 0.85 mm Performance is typical across frequency. Please reference electrical specification table and data plots for more details. Functional Block Diagram 48 47 46 45 44 43 42 41 40 39 38 37 Applications 36 1 35 2 Radar 34 3 33 4 32 5 31 RF Out RF In 6 30 RF Out RF In 7 29 8 28 9 27 10 Ordering Information 26 11 Part No. Description 25 12 2.7 3.5 GHz 100 W GaN Power QPA3069 Amplifier (10 Pcs.) 13 14 15 16 17 18 19 20 21 22 23 24 QPA3069TR7 250 piece 7 reel Top View QPA3069EVB Evaluation Board for QPA3069 Data Sheet Rev. C, September 2019 1 of 19 www.qorvo.com QPA3069 2.7 3.5 GHz 100 W GaN Power Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Value/ Rang Parameter Value/ Range e Drain Voltage (VD) 40 V Drain Voltage (VD) 30 V Gate Voltage Range (V ) 8 to +1 V Drain Current (I ) 300 mA G DQ Drain Current (ID) 13.6 A Gate Voltage Range (VG) 2.8 to 2.0 V See plot on Operating Temperature 40 to +85 C Gate Current (I ) G page 12 Electrical specifications are measured at specified test Power Dissipation (P ), 85 C 117 W conditions. Specifications are not guaranteed over all DISS recommended operating conditions. Input Power (P ), Pulsed, 50 , V =28 IN D 31 dBm V, IDQ=300 mA, 85 C Input Power (P ), Pulsed, 3:1 VSWR, IN 28 dBm VD=28 V, IDQ=300 mA, 85 C Soldering Temperature (30 seconds) 260 C Storage Temperature 55 to 150 C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Electrical Specifications Parameter Min Typ Max Units Operational Frequency Range 2.7 3.5 GHz Output Power (P = 25 dBm) 2.7 GHz 50.4 dBm IN 3.1 GHz 50.5 dBm 3.5 GHz 50.1 dBm Power Added Efficiency (P = 25 dBm) 2.7 GHz 54.3 % IN 3.1 GHz 55.9 % 3.5 GHz 55.8 % Small Signal Gain (CW) 2.7 GHz 31.1 dB 3.1 GHz 31.7 dB 3.5 GHz 29.3 dB Input Return Loss (CW) 2.7 GHz 13 dB 3.1 GHz 10 dB 3.5 GHz 29 dB Output Return Loss (CW) 2.7 GHz 7 dB 3.1 GHz 5 dB 3.5 GHz 19 dB Second Harmonic (P = 25 dBm) 23 dBc IN Third Harmonic (P = 25 dBm) 40 dBc IN Gate Leakage (VD = 10 V, VG = 3.7 V) 42.0 4.5 0.0001 mA P Temp. Coeff. (8525 C, P = 25 dBm)) 0.001 dB/C OUT IN Sm. Sig. Gain Temp. Coefficient (85 to 40 C, CW) 0.041 dB/C Test conditions, unless otherwise noted: T = 25 C, VD = 30 V, IDQ = 300 mA, PW = 100 us, Duty Cycle = 10% Data Sheet Rev. C, September 2019 2 of 19 www.qorvo.com