QPA3503 3 W, 28 V, 3.4 3.6 GHz GaN PA Module Product Description The QPA3503 is an integrated 2-stage Power Amplifier Module designed for massive MIMO applications with 3 W RMS at the device output covering frequency range from 3.4 to 3.6 GHz. The module is 50 input and output and requisr eminimal 36 Pin 6x10 mm Plastic Package external components. The module is also compact and offers a much smaller footprint than traditional discrete component solutions. Product Features The QPA3503 incorporates a Doherty final stage Operating Frequency Range: 3.4 - 3.6 GHz delivering high power added efficiency for the entire Operating Drain Voltage: +28 V module at 3 W average power. 50 Input / Outpu t Integrated Doherty Final Stage RoHS compliant. Gain at 3 W avg.: 32 dB Power Added Efficiency at 3 W avg.: 33% Functional Block Diagram 6x10 mm Plastic Surface Mount Package Applications 5G Massive MIMO W-CDMA / LTE Macrocell Base Station Driver Microcell Base Station Small Cell Final Stage Active Antenna General Purpose Applications Ordering Information Part No. Description QPA3503SB Sample Bag 5 Pieces QPA3503SR Short Reel 100 Pieces QPA3503TR13 13 Reel 2500 Pieces QPA3503EVB01 Tested 3.4-3.6 GHz EVB - 1 of 11 - Data Sheet Rev. B Subject to change without notice. www.qorvo.com QPA3503 3 W, 28 V, 3.4 3.6 GHz GaN PA Module 2 Absolute Maximum Ratings Recommended Operating Conditions Parameter Range/ Value Units Parameter Min Typ Max Units Breakdown Voltage, BV 120 V DG Gate Voltage (VG1) 2.6 V Gate Voltage (VG1,2,3) 7 to +2 V Gate Voltage (VG2) 4.5 V Drain Voltage (V ) +40 V D1,2,3 Gate Voltage (V ) 2.6 V G3 (1) RF Input Power +25 dBm Drain Voltage (VD1,2,3) +28 V VSWR Mismatch, P3dB Quiescent Current (IDQ1) 50 mA Pulse (10% duty cycle, 10:1 Quiescent Current (I ) 75 mA DQ3 100 width), T = 25C Electrical performance is measured under conditions noted in the Storage Temperature 65 to +150 C electrical specifications table. Specifications are not guaranteed 1. Tested at 3.5 GHZ, T = +25C, single-carrier, 20 MHz LTE over all recommended operating conditions. signal with 7.8 dB PAR 0.01% CCDF. 2. Operation of this device outside the parameter ranges given above may cause permanent damage. Electrical Specifications Parameter Conditions Min Typ Max Units Frequency Range 3.4 3.6 GHz Driver Quiescent Current 50 mA Carrier Quiescent Current 75 mA Gain P = 34.8 dBm 32 dB AVG P3dB 3 dB PAR compression 44 dBm Power Added Efficiency PAVG = 34.8 dBm 33 % Raw ACLR P = 34.8 dBm 28 dBc AVG Test conditions unless otherwise noted: VD1,2,3 = +28V, IDQ1 = 50mA, IDQ3 = 75 mA, VG2 = 4.5 V, T =+ 25C, single-carrier, 20 MHz LTE signal with 7.8 dB PAR 0.01% CCDF, de-embedded from EVB measurements. Thermal and Reliability Information Parameter Test Conditions Value Units TCASE = +85C, TCH = 101C Peak IR Surface Thermal Resistance at 2.6 C/W Average Power ( ) JC CW: PDISS = 6.1 W, POUT = 3 W Notes: 1. Thermal resistance measured to package backside. 2. Based on expected carrier amplifier efficiency of Doherty. 3. POUT assumes 20% peaking amplifier contribution of total average Doherty rated power. 4. Refer to the following document: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates - 2 of 11 - Data Sheet Rev. B Subject to change without notice. www.qorvo.com