QPA9424 High Linearity 0.5 W Small Cell PA Product Overview The QPA9424 is a high-linearity three-stage power amplifier in a low-cost surface-mount package with on-chip bias control and temperature control circuits, suitable for small cell base station applications. The QPA9424 provides 35.8dB gain and +27dBm linear 7mmx7mm Leadless SMT Package power over the 23002400MHz frequency range covering band 30 and band 40. This amplifier is able to achieve 48.5dBc ACLR at +27dBm output power with 20 MHz LTE signal. The QPA9424 integrates three high performance amplifier Key Features stages onto a module to allow for a compact system design 2.3002.400GHz Frequency Range and requires very few external components for operation. The amplifier is bias adjustable allowing the amplifiers Fully integrated, 3 Stage Power Amplifier power consumption to be optimized. The QPA9424 is Internally Matched 50 Input/Output available in a 7x7mm surface mount package. 48.5dBc ACLR at Pavg = +27dBm 35.8dB Gain 14.6% PAE at +27dBm 455mA Quiescent Current On-chip Control Bias and Temp. Comp Circuit Functional Block Diagram Applications Small Cell/Picocell Band 30 & Band 40 Enterprise Femtocell Customer Premises Equipment (CPE) Data Cards and Terminals Distributed Antenna Systems (DAS) Booster Amps, Repeaters Ordering Information Top View Part No. Description QPA9424TR13 2500 pieces on a 13 reel QPA9424EVB-01 2300 2400 MHz Evaluation board Datasheet Rev. C, October 12, 2020 Subject to change without notice 1 of 10 www.qorvo.com QPA9424 High Linearity 0.5 W Small Cell PA Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Min Typ Max Units Storage Temperature 55 to +150C VCC1, Vcc2 +3.6 +4.5 +5.25 V V +2.75 +2.85 +2.95 V Supply Voltage (VCC) +6 V ref V +3.5 V TCASE 40 +85 C ref Tj at T max +156 C RF Input Power, CW, 50, T=25 C +13 dBm CASE Electrical specifications are measured at specified test conditions. Tj at T = 125C +196C CASE Specifications are not guaranteed over all recommended operating Operation of this device outside the parameter ranges given conditions. above may cause permanent damage. Electrical Specifications Test conditions unless otherwise noted: V = V = +4.5V, Vref = +2.85V, Temp= +25C CC1 CC2 Parameter Conditions Min Typ Max Units Operational Frequency Range 2300 2400 MHz Test Frequency 2350 MHz Gain POUT+27dBm,CW 32 35.8 38 dB (3) Input Return Loss 15 20 dB CW, small signal (3) Output Return Loss 15 21.5 dB P1dB CW 35.4 dBm ACLR P +27dBm,20MHzLTEE-TM1.1,9.5dB PAR 48.5 45 dBc OUT P +27dBm,20x2MHzLTEE-TM1.1,9.5dB PAR 44.8 dBc OUT Power Added Efficiency POUT+27dBm,20MHzLTEE-TM1.1,9.5dB PAR 13 14.6 % (1) Quiescent Current, ICQ VCC1 + VCC2 330 455 520 mA Leakage Current on VCC VCC +4.5V, Vref 0V 1.3 10 A (3) Reference Current , Iref Temp -40C to +85C, Vref = +2.85V 15 19.5 mA Operational Current, ICC POUT +27dBm, 20MHzLTEE-TM1.1,9.5dB PAR 763 870 mA (2) Wake Up Time 50% of control signal to 90% of the RF output 1290 ns (2) Power Down Time 50% of control signal to 10% of the RF output 670 ns Spurious Output Level P +27dBm, In & Out of band load VSWR 10:1 60 dBc OUT VSWR survivability No permanent degradation or failure 10:1 - 2F (P +27 dBm), CW signal 45 35 dBc 0 OUT (3) Harmonics 3F (P +27 dBm), CW signal 56 43 dBc 0 OUT 4F0 (POUT +27 dBm), CW signal 65 dBc Thermal Resistance, jc Module (junction to case) 17.4 C/W Notes: 1. Vcc1 draws very little current and provides the bias voltage to the current mirror circuit along with Vref to set the bias point for the whole amplifier. 2. Control signal applied to Vref Pin, 0 to 2.85V 3. Guaranteed by design, not tested in production Datasheet Rev. C, October 12, 2020 Subject to change without notice 2 of 10 www.qorvo.com