X-On Electronics has gained recognition as a prominent supplier of QPA9908SR RF Amplifier across the USA, India, Europe, Australia, and various other global locations. QPA9908SR RF Amplifier are a product manufactured by Qorvo. We provide cost-effective solutions for RF Amplifier, ensuring timely deliveries around the world.

QPA9908SR Qorvo

QPA9908SR electronic component of Qorvo
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Part No.QPA9908SR
Manufacturer: Qorvo
Category: RF Amplifier
Description: RF Amplifier 0.9-0.99 GHz PA
Datasheet: QPA9908SR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 23.499 ea
Line Total: USD 23.5 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 04 Dec to Fri. 06 Dec
MOQ : 1
Multiples : 1
1 : USD 23.499
25 : USD 16.4043
100 : USD 13.3148

   
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We are delighted to provide the QPA9908SR from our RF Amplifier category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the QPA9908SR and other electronic components in the RF Amplifier category and beyond.

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QPA9908 850-960MHz 4 W High-Efficiency Amplifier Product Overview The QPA9908 is a high-efficiency, linearizable power amplifier targeting Band 8 small-cell wireless infrastructure systems. The product delivers high efficiency of 36% at +28dBm average output power, while providing excellent DPD linearized ACPR of -48dBc for signal bandwidths of up to 40MHz. The QPA9908 is housed in a 5x5mm SMT package. It is 16 Pad 5x5mm Package pin-to-pin compatible to QPA9903 (band 3 high-efficiency small cell PA). Key Features 850960MHz Up to 40MHz IBW capability 32.6 dB Gain typical 36% PAE at +28 dBm power output Functional Block Diagram <-48 dBc ACPR DPD linearized at +28 dBm Pout 1.8V logic compatible PA ON/OFF control On chip ESD protection Applications 3GPP Band 8 Small Cells M-MIMO Repeaters / DAS Mobile Infrastructure General Purpose Wireless Top View Ordering Information Part No. Description QPA9908TR13 2500 on reel QPA9908EVB-01 850-960 MHz EVB th Datasheet, Aug. 10 , 2021 Subject to change without notice 1 of 14 www.qorvo.com QPA9908 850-960MHz 4 W High-Efficiency Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Min Typ Max Units Storage Temperature 55 to +125C Device Voltage (VCC) +4.75 +5 +5.25 V (1) RF Input Power, Pulsed CW, 50 +10 dBm TCASE 40 +85 C 6 Device Voltage (VCC) +5.5 V Tj for >10 hours MTTF +175 C Exceeding any one or a combination of the Absolute Maximum Rating Electrical specifications are measured at specified test conditions. conditions may cause permanent damage to the device. Extended Specifications are not guaranteed over all recommended operating application of Absolute Maximum Rating conditions to the device may conditions. reduce device reliability. Note: 1. 850-960 MHz, Pulsed CW, 10% duty cycle, 100us period Electrical Specifications (1) Parameter Conditions Min Typ Max Units Operational Frequency Range 850 960 MHz Test Frequency 942 MHz Gain Pout=+28dBm 30 32.6 dB Input Return Loss -20 dB Output P3dB 100 s/1 ms, 10% duty cycle +33 +35.5 dBm (2) Power Added Efficiency Pout=+28dBm 36 % (3) ACPR(Uncorrected) Pout=+28dBm -32 dBc Quiescent Current, ICQ Pins 12, 14 and 16 40 70 100 mA Total Operating Current Pins 5, 12, 14 and 16, Pout=+28dBm 370 mA Thermal Resistance, jc Junction to case 24 C/W V High 1.17 1.8 V V EN CC V Low 0 0 0.63 V EN 2nd Harmonic Pout=+28dBm -40 dBc 3rd Harmonic Pout=+28dBm -50 dBc Notes: 1. Test conditions unless otherwise noted: All VCC& VBIAS =+5.0V, VEN = +1.8V, Temp=+25C, 50 system. 2. LTE, 20 MHz E-UTRA Test Model 1.1 or 3.1, PAR = 8.5 dB at 0.01% Probability 3. LTE, 20 MHz x 2 E-UTRA Test Model 1.1 or 3.1, PAR = 8.5 dB at 0.01% Probability Power Amplifier Enable Logic Table Parameter High Low V Power Amplifier ON Power Amplifier OFF EN th Datasheet, Aug. 10 , 2021 Subject to change without notice 2 of 14 www.qorvo.com

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8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
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