RFMD + TriQuint = Qorvo QPC6034 Absorptive High Isolation SP3T Switch 5MHz to 6000MHz The QPC6034 is a Silicon on Insulator (SOI) single-pole, 3-throw Package: QFN, 24-pin, (SP3T) switch, designed for use in cellular, 3G, LTE, and other 4.0mm x 4.0mm high performance communications systems. It offers high Features isolation symmetric topology with excellent linearity and power handling capability. No blocking capacitors are necessary on the 5MHz to 6000MHz Operation RF ports. The design is non-reflective such that the RFX ports Symmetrical SP3T. are terminated into 50 in the off state. QPC6034 is +1.8V logic Non-Reflective (RFX ports) compatible, and incorporates a single pin to disable the internal Negative Voltage Generator (NVG) and supply a negative Terminated All-Off State mode voltage from off-chip, if necessary. No Blocking Caps Necessary unless voltage is on RF Line High Isolation: 62dB at 2GHz Functional Block Diagram Pin 1 High Input IP3: +59dBm Mark 2kV ESD 24 23 22 21 20 19 GND +1.8V Logic Compatible 1 18 V2 Logic/ Control GND 2 17 V1 GND 3 16 VDD GND 4 15 GND Applications GND 5 RF1 14 Cellular, 3G, LTE Infrastructure GND 6 GND 13 7 8 9 10 11 12 WiBro, WiMAX, LTE High Performance Communications Systems Ordering Information Test Equipment QPC6034SQ Sample Bag with 25 pieces QPC6034SR 7 Reel with 100 pieces QPC6034TR13 13 Reel with 2500 pieces QPC6034PCK401 5 MHz to 6000 MHz PCBA with 5-Piece Sample Bag Revision 4-24-2017 Disclaimer: Subject to change without notice - 1 of 10 - 2017 Qorvo, Inc. www.rfmd.com / www.qorvo.com GND GND RF3 GND GND RFC GND GND RF2 V /GND SS GND GND QPC6034 RFMD + TriQuint = Qorvo Absolute Maximum Ratings Parameter Rating Units Caution ESD sensitive device. Supply Voltage +6 V Control Voltage -0.2 to +6 V VSS Supply 6 V Max RF Input Power, RFC/RFX non- RFMD Green: RoHS status based on EU Directive +37.5 dBm 2011/65/EU (at time of this document revision), halogen terminated free per IEC 61249-2-21, < 1000ppm each of antimony Max RF Input Power, RFX terminated +29 dBm trioxide in polymeric materials and red phosphorus as a flame retardant, and <2% antimony in solder. Operating Temperature 40 to +105 C Exceeding any one or a combination of the Absolute Maximum Rating Storage Temperature 40 to +150 C conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may Maximum Junction Temperature +125 C reduce device reliability. Specified typical performance or functional - operation of the device under Absolute Maximum Rating conditions is not Human Body Model (HBM) 2000 ESD Rating V implied. Charge Device Model (CDM) 1000 Moisture Sensitivity Level (MSL) Rating 2 Recommended Operating Conditions Specifications Parameter Units Min Typ Max Operating Temperature Range 40 +25 +105 C Operating Junction Temperature +125 C Supply Voltage +2.7 +5.0 +5.5 V VSS Supply (Applicable for off-chip negative supply, otherwise 5.5 5.0 2.7 V 0V (zero) for internal NVG operation) Electrical Specifications Specification Parameter Units Conditions Min Typ Max Operating Frequency Range 5 6000 MHz 0.84 dB 450MHz 0.86 dB 900MHz 0.93 1.25 dB 2100MHz Insertion Loss 0.96 dB 2600MHz 0.98 dB 4000MHz 1.00 dB 6000MHz 75 dB 450MHz 70 dB 900MHz 50 62 dB 2100MHz Isolation (RFCRFX) 61 dB 2600MHz 61 dB 4000MHz 60 dB 6000MHz Test conditions unless otherwise specified: T =+25C, V = 0/+5 V, V = +5V, 50 system, Standard Application Circuit A CTRL DD Revision 4-24-2017 Disclaimer: Subject to change without notice - 2 of 10 - 2017 Qorvo, Inc. www.rfmd.com / www.qorvo.com