TQP5523 High Power 5GHz WLAN Power Amplifier Product Overview The TQP5523 is high power WLAN power amplifier module that contains internally matched 3-stage PA, compensated DC biasing circuit and output power detector. This PA module provides high gain (32dB), high linearity, industry leading EVM floor, and excellent spectral 20 Pad 4.0 x 4.0 x 0.85 mm QFN Package purity for wideband OFDM applications. The architecture and interface are optimized for most stringent EVM requirements of next generation 802.11.ac WLAN devices. Key Features Fully Integrated, 802.11ac Power Amplifier Module With The TQP5523 features chipset logic compatible control Power Detector voltages that draw very low current to facilitate ease of Internally Matched Input/Output use and compatibility with current and future transceiver Temperature Compensated Bias Network generation. With its optimized power dissipation, the High Gain = 32dB amplifier module is well suited for implementation into next Integrated CMOS Compatible Logic and Shutdown generation MIMO configurations and well designed to work with or without digital pre-distortion (DPD). P =+23.5dBm(typ.) at 30dB EVM OUT (802.11n/HT40/MCS7) The TQP5523 is manufactured using Qorvos high- P =+16dBm(typ.) at 40dB EVM OUT reliability HBT technology and is assembled in a small (802.11ac/VHT80/MCS9) footprint 4.0mm x 4.0mm x 0.85 mm 20 pad QFN POUT=+21dBm(typ.) at 37dB EVM package. (802.11ac/VHT80/MCS9) Supply Voltage: +3.3V to +5.0V Leadless 4.0 x 4.0 x 0.85 mm SMT Pb-Free Package Applications Functional Block Diagram 802.11a/n/ac Wireless LAN Systems CPE (Set Top Box, Routers, Gateways) WiFi Access Points and Small Cells Telematics Gaming and Infotainment Portable Devices Point-to-point and Backhaul ISM Band Ordering Information Part No. Description TQP5523 2500 Pieces on a 13 reel (standard) TQP5523-EVB Assembled Evaluation Board Dat a Sheet Oct 19, 2018 Subject to change without notice 1 of 11 www.qorvo.com TQP5523 TQP5523 High Power 5GHz WLAN Power Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Min Typ Max Units Storage Temperature 40 to 150C VCC1, VCC2, VCC3 +3.3 +5.0 +5.25 V Case Temperature, Survival 40 to 100C TAMB 30 +25 +85 C 6 RF Input Power, CW, 50, T=25C +5dBm Tj (for>10 hours MTTF) +170 C Device Voltage +6.0 V Electrical performance is measured under conditions noted in the electrical specifications table. Specifications are not Operation of this device outside the parameter ranges given guaranteed over all recommended operating conditions. above may cause permanent damage. Electrical Specifications DC Characteristics (1) Parameter Conditions Min Typ Max Units Quiescent Current No RF 195 250 mA Operational Current Pout = +21dBm, 802.11ac/MCS9/HT80 300 mA TX Shut Down Current PA EN= Low, No RF 8 A Input Voltage for High State +1.8 +3.0 V V CC1 PA Enable Voltage Input Voltage for Low State 0 +0.45 V PA Enable Current 10 100 A Rise/Fall Time 0.4 0.8 uS Thermal Resistance, jc Junction to backside paddle 35 C/W Notes: 1. Test conditions unless otherwise noted: V V , V =+5.0 V, Temp=+25C. CC1, CC2 CC3 Logic Truth Table PA Mode PA EN State Disabled Low Enabled High Data Sheet Oct 19, 2018 Subject to change without notice 2 of 11 www.qorvo.com