FR801 RECTRON SEMICONDUCTOR THRU TECHNICAL SPECIFICATION FR807 FAST RECOVERY GLASS PASSIVATED RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 8.0 Amperes FEATURES * Fast switching * Low leakage * Low forward voltage drop * High current capability * High surge capability TO-220A * High reliability .187 (4.7) MECHANICAL DATA .148 (3.8) ( ) ( ) .153 3.9 .413 10.5 * Case: TO-220A molded plastic .108 .146 (3.7) ( ) .374 9.5 (2.75) * Epoxy: Device has UL flammability classification 94V-O ( ) .053 1.3 .047 (1.2) * Lead: MIL-STD-202E method 208C guaranteed .270 (6.9) ( ) .230 5.8 * Mounting position: Any .610 (15.5) * Weight: 2.24 grams ( ) .583 14.8 * Polarity: As marking .04MAX. (1.0) .157 (4.0) ( ) .583 14.8 .051 ( ) .531 13.5 (1.3) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS .035 (0.9) o .028 (0.7) Ratings at 25 C ambient temperature unless otherwise specified022 (0.56) ( ) .102 2.6 Single phase, half wave, 60 Hz, resistive or inductive load. ( ) .014 0.36 .091 (2.3) .126 For capacitive load, derate current by 20%. ( ) 3.2 Dimensions in inches and (millimeters) o MAXIMUM RATINGS (At TA = 25 C unless otherwise noted) RATINGS SYMBOL FR801 FR802 FR803 FR804 FR805 FR806 FR807 UNITS Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 Volts Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 Volts VDC 1000 Maximum DC Blocking Voltage 50 100 200 400 600 800 Volts o Maximum Average Forward Rectified Current at TC = 75 C IO 8.0 Amps Peak Forward Surge Current 8.3 ms single half sine-wave IFSM 200 Amps superimposed on rated load (JEDEC method) 0 Typical Thermal Resistance (Note 3) R JC 3 C/W CJ 50 pF Typical Junction Capacitance (Note 2) 0 Operating and Storage Temperature Range TJ, TSTG -55 to + 150 C o ELECTRICAL CHARACTERISTICS (At TA = 25 C unless otherwise noted) UNITS CHARACTERISTICS SYMBOL FR801 FR802 FR803 FR804 FR805 FR806 FR807 Maximum Instantaneous Forward Voltage at 8.0A DC VF 1.3 Volts Maximum DC Reverse Current 10 uAmps o at Rated DC Blocking Voltage TA = 25 C IR Maximum Full Load Reverse Current Average, 150 uAmps o Full Cycle at TC = 100 C Maximum Reverse Recovery Time (Note 1) trr 150 250 500 nSec NOTES : 1. Test Conditions: IF = 0.5A, IR = -1.0A, IRR = -0.25A 2003-1 2. Measured at 1 MHz and applied reverse voltage of 4.0 volts 3. Thermal Resistance Junction to Case. 4. Suffix R for Reverse Polarity.( ) RATING AND CHARACTERISTIC CURVES FR801 THRU FR807 FIG. 2 - MAXIMUM NON-REPETITIVE FORWARD FIG. 1 - TYPICAL FORWARD CURRENT SURGE CURRENT DERATING CURVE 8 300 8.3ms Single Half 250 Sine-Wave (JEDED Method) 6 200 4 150 Single Phase Half Wave 100 60Hz Inductive or 2 Resistive Load 50 0 0 0 25 50 75 100 125 150 175 1 2 5 10 20 50 100 o CASE TEMPERATURE, ( C) NUMBER OF CYCLES AT 60Hz FIG. 3 - TYPICAL INSTANTANEOUS FIG. 4 - TYPICAL REVERSE CHARACTERISTICS FORWARD CHARACTERISTICS 20 10 10 6 4 2 3.0 1.0 o T = 25 C 1.0 J .6 Pulse Width=300uS .4 1% Duty Cycle 0.3 .2 TJ = 25 .1 0.1 .06 .04 .03 .02 .01 .01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE, (%) INSTANTANEOUS FORWARD VOLTAGE, (V) FIG. 5 - TYPICAL JUNCTION CAPACITANCE FIG. 6 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC 200 50 10 trr NONINDUCTIVE NONINDUCTIVE 100 +0.5A 60 ( - ) D.U.T 0 40 ( + ) PULSE 25 Vdc -0.25A GENERATOR 20 (approx) (NOTE 2) ( - ) 1 OSCILLOSCOPE ( + ) 10 NON- o (NOTE 1) T = 25 C J INDUCTIVE 6 -1.0A 1cm SET TIME BASE FOR NOTES: 1 Rise Time = 7ns max. Input Impedance = 4 50/100 ns/cm 1 megohm. 22pF. 2. Rise Time = 10ns max. Source Impedance = 2 50 ohms. 1 .1 .2 .4 1.0 2 4 10 20 40 100 REVERSE VOLTAGE, ( V ) RREECCTTRROONN RRREEECCCTTTRRROOONNN AVERAGE FORWARD CURRENT, (A) JUNCTION CAPACITANCE, (pF) INSTANTANEOUS FORWARD CURRENT, (A) INSTANTANEOUS REVERSE PEAK FORWARD SURGE CURRENT, (uA) CURRENT, (A)