X-On Electronics has gained recognition as a prominent supplier of 2SK1835-E MOSFETs across the USA, India, Europe, Australia, and various other global locations. 2SK1835-E MOSFETs are a product manufactured by Renesas. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

2SK1835-E Renesas

2SK1835-E electronic component of Renesas
2SK1835-E Renesas
2SK1835-E MOSFETs
2SK1835-E  Semiconductors

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See Product Specifications
Part No. 2SK1835-E
Manufacturer: Renesas
Category: MOSFETs
Description: MOSFET MOSFET - Pb Free
Datasheet: 2SK1835-E Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 14.4354 ea
Line Total: USD 14.44 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
172
Ship by Fri. 11 Apr to Tue. 15 Apr
MOQ : 1
Multiples : 1
1 : USD 28.1855
10 : USD 23.4385
30 : USD 22.3852
120 : USD 20.5659
270 : USD 19.619

   
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RoHS - XON
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We are delighted to provide the 2SK1835-E from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SK1835-E and other electronic components in the MOSFETs category and beyond.

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2SK1835 Silicon N Channel MOS FET REJ03G0978-0400 Rev.4.00 Jun 04, 2008 Application High speed power switching Features High breakdown voltage (V = 1500 V) DSS High speed switching Low drive current No secondary breakdown Suitable for switching regulator Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D 1. Gate G 2. Drain (Flange) 3. Source S 1 2 3 REJ03G0978-0400 Rev.4.00 Jun 04, 2008 Page 1 of 6 2SK1835 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Drain to source voltage V 1500 V DSS Gate to source voltage V 20 V GSS Drain current I 4 A D Note1 Drain peak current I 10 A D(pulse) Body to drain diode reverse drain current I 4 A DR Note2 Channel dissipation Pch 125 W Channel temperature Tch 150 C Storage temperature Tstg 55 to +150 C Notes: 1. PW 10 s, duty cycle 1 % 2. Value at Tc = 25C Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V 1500 V I = 10 mA, V = 0 (BR)DSS D GS Gate to source leak current I 1 A V = 20 V, V = 0 GSS GS DS Zero gate voltage drain current I 500 A V = 1200 V, V = 0 DSS DS GS Gate to source cutoff voltage V 2.0 4.0 V I = 1 mA, V = 10 V GS(off) D DS Note 3 Static drain to source on state R 4.6 7.0 I = 2 A, V = 15 V DS(on) D GS resistance Note 3 Forward transfer admittance y 0.9 1.4 S I = 2 A, V = 20 V fs D DS Input capacitance Ciss 1700 pF V = 10 V, V = 0, DS GS f = 1 MHz Output capacitance Coss 230 pF Reverse transfer capacitance Crss 100 pF Turn-on delay time t 25 ns I = 2A, V = 10 V, d(on) D GS R = 15 L Rise time t 80 ns r Turn-off delay time t 230 ns d(off) Fall time t 80 ns f Body to drain diode forward voltage V 0.85 V I = 4 A, V = 0 DF F GS Body to drain diode reverse t 2500 ns I = 4 A, V = 0, rr F GS recovery time di /dt = 100 A/ s F Note: 3. Pulse Test REJ03G0978-0400 Rev.4.00 Jun 04, 2008 Page 2 of 6

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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