2SK1835 Silicon N Channel MOS FET REJ03G0978-0400 Rev.4.00 Jun 04, 2008 Application High speed power switching Features High breakdown voltage (V = 1500 V) DSS High speed switching Low drive current No secondary breakdown Suitable for switching regulator Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D 1. Gate G 2. Drain (Flange) 3. Source S 1 2 3 REJ03G0978-0400 Rev.4.00 Jun 04, 2008 Page 1 of 6 2SK1835 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Drain to source voltage V 1500 V DSS Gate to source voltage V 20 V GSS Drain current I 4 A D Note1 Drain peak current I 10 A D(pulse) Body to drain diode reverse drain current I 4 A DR Note2 Channel dissipation Pch 125 W Channel temperature Tch 150 C Storage temperature Tstg 55 to +150 C Notes: 1. PW 10 s, duty cycle 1 % 2. Value at Tc = 25C Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V 1500 V I = 10 mA, V = 0 (BR)DSS D GS Gate to source leak current I 1 A V = 20 V, V = 0 GSS GS DS Zero gate voltage drain current I 500 A V = 1200 V, V = 0 DSS DS GS Gate to source cutoff voltage V 2.0 4.0 V I = 1 mA, V = 10 V GS(off) D DS Note 3 Static drain to source on state R 4.6 7.0 I = 2 A, V = 15 V DS(on) D GS resistance Note 3 Forward transfer admittance y 0.9 1.4 S I = 2 A, V = 20 V fs D DS Input capacitance Ciss 1700 pF V = 10 V, V = 0, DS GS f = 1 MHz Output capacitance Coss 230 pF Reverse transfer capacitance Crss 100 pF Turn-on delay time t 25 ns I = 2A, V = 10 V, d(on) D GS R = 15 L Rise time t 80 ns r Turn-off delay time t 230 ns d(off) Fall time t 80 ns f Body to drain diode forward voltage V 0.85 V I = 4 A, V = 0 DF F GS Body to drain diode reverse t 2500 ns I = 4 A, V = 0, rr F GS recovery time di /dt = 100 A/ s F Note: 3. Pulse Test REJ03G0978-0400 Rev.4.00 Jun 04, 2008 Page 2 of 6