IPD180N10N3 G TM OptiMOS 3 Power-Transistor Product Summary Features V 100 V DS N-channel, normal level R 18 mW DS(on),max TO-263 Excellent gate charge x R product (FOM) DS(on) I 43 A D Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating RoHS compliant 1) Qualified according to JEDEC for target application Ideal for high-frequency switching and synchronous rectification Halogen-free according to IEC61249-2-21 Type IPD180N10N3 G Package PG-TO252-3 Marking 180N10N Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit 2) Continuous drain current I 43 A T =25C D C T =100C 30 C 2) I T =25C 172 Pulsed drain current D,pulse C Avalanche energy, single pulse E I =33A, R =25W 50 mJ AS D GS Gate source voltage V 20 V GS P T =25C Power dissipation 71 W tot C T , T Operating and storage temperature -55 ... 175 C j stg IEC climatic category DIN IEC 68-1 55/175/56 1) J-STD20 and JESD22 2) See figure 3 Rev. 2.3 page 1 2014-05-19IPD180N10N3 G Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics R Thermal resistance, junction - case - - 2.1 K/W thJC Thermal resistance, R minimal footprint - - 75 thJA 2 3) junction - ambient - - 50 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =0V, I =1mA 100 - - V (BR)DSS GS D Gate threshold voltage V V =V , I =33A 2 2.7 3.5 GS(th) DS GS D V =100V, V =0V, DS GS Zero gate voltage drain current I - 0.1 1 A DSS T =25C j V =100V, V =0V, DS GS - 10 100 T =125C j Gate-source leakage current I V =20V, V =0V - 1 100 nA GSS GS DS Drain-source on-state resistance R V =10V, I =33A - 14.7 18 mW DS(on) GS D V =6V, I =16A - 18.4 33 GS D R Gate resistance - 1.4 - W G V >2 I R , DS D DS(on)max g Transconductance 20 40 - S fs I =33A D 3) 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. Rev. 2.3 page 2 2014-05-19