X-On Electronics has gained recognition as a prominent supplier of 71256L35YGI8 SRAM across the USA, India, Europe, Australia, and various other global locations. 71256L35YGI8 SRAM are a product manufactured by Renesas. We provide cost-effective solutions for SRAM, ensuring timely deliveries around the world.

71256L35YGI8 Renesas

71256L35YGI8 electronic component of Renesas
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Part No.71256L35YGI8
Manufacturer: Renesas
Category: SRAM
Description: SRAM 32Kx8 ASYNCHRONOUS 5.0V STATIC RAM
Datasheet: 71256L35YGI8 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
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Obsolete
Availability Price Quantity
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MOQ : 1000
Multiples : 1000
1000 : USD 5.0391
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MOQ : 1
Multiples : 1
1 : USD 9.3048
10 : USD 8.2274
25 : USD 8.0564
100 : USD 7.2123
250 : USD 6.988
500 : USD 6.7742
1000 : USD 6.7636
N/A

Obsolete
   
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We are delighted to provide the 71256L35YGI8 from our SRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 71256L35YGI8 and other electronic components in the SRAM category and beyond.

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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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71256S CMOS Static RAM 71256L 256K (32K x 8-Bit) Features Description High-speed address/chip select time The IDT 71256 is a 262,144-bit high-speed static RAM organized as Commercial: 20/25/35ns (max.) 32K x 8. It is fabricated using high-performance, high-reliability CMOS Industrial: 20/25/35ns (max.) technology. Military: 25/35/45/55/70/85/100ns (max.) Address access times as fast as 20ns are available with power Low-power operation consumption of only 350mW (typ.). The circuit also offers a reduced power Battery Backup operation 2V data retention standby mode. When CS goes HIGH, the circuit will automatically go to and Produced with advanced high-performance CMOS remain in, a low-power standby mode as long as CS remains HIGH. This technology capability provides significant system level power and cooling savings. Input and output directly TTL-compatible The low-power (L) version also offers a battery backup data retention Available in standard 28-pin (300 or 600 mil) ceramic DIP, capability where the circuit typically consumes only 5W when operating 28-pin (300 mil) SOJ off a 2V battery. Military product compliant to MIL-STD-883, Class B The IDT71256 is packaged in a 28-pin (300 or 600 mil) ceramic DIP, Industrial temperature range (40C to +85C) is available a 28-pin 300 mil SOJ providing high board level packing densities. for selected speeds The IDT71256 military RAM is manufactured in compliance with the Green parts available, see ordering information latest revision of MIL-STD-883, Class B, making it ideally suited to military temperature applications demanding the highest level of performance and reliability. Functional Block Diagram A0 VCC GND 262,144 BIT ADDRESS MEMORY ARRAY DECODER A14 I/O0 I/O CONTROL INPUT DATA CIRCUIT I/O7 , CS CONTROL OE CIRCUIT 2946 drw 01 WE 1 Aug.06.2071256S/L CMOS Static RAM 256K (32K x 8-Bit) Military, Commercial, and Industrial Temperature Ranges (1) (1) Pin Configurations Truth Table WE CS OE I/O Function 1 VCC A14 28 XH X High-Z Standby (ISB) 2 A12 27 WE 3 A7 26 A13 XVHC X High-Z Standby (ISB1) A6 4 25 A8 H L H High-Z Output Disabled 71256S/L 5 24 A5 A9 A4 6 SD28 23 A11 HL L DOUT Read Data CD28 7 22 A3 OE LL X DIN Write Data PJG28 A2 8 21 A10 9 20 2946 tbl 02 A1 CS NOTE: A0 10 19 I/O7 1. H = VIH, L = VIL, X = Don t care. 11 18 I/O0 I/O6 I/O1 12 17 I/O5 13 I/O2 16 I/O4 14 GND 15 I/O3 (1) 2946 drw 02 Absolute Maximum Ratings Symbol Rating Com l. Ind. Mil. Unit DIP/SOJ VTERM Terminal Voltage -0.5 to +7.0 -0.5 to +7.0 -0.5 to +7.0 V Top View with Respect to GND NOTE: 1. This text does not indicate orientation of actual part-marking. o TA Operating 0 to +70 -40 to +85 -55 to +125 C Temperature o TBIAS Temperature -55 to +125 -55 to +125 -65 to +135 C Under Bias Pin Descriptions Storage o TSTG -55 to +125 -55 to +125 -65 to +150 C Name Description Temperature A0 - A14 Address Inputs Power PT 1.0 1.0 1.0 W Dissipation I/O0 - I/O7 Data Input/Output IOUT DC Output Current 50 50 50 mA Chip Select CS 2946 tbl 03 NOTE: WE Write Enable 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and OE Output Enable functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure GND Ground to absolute maximum rating conditions for extended periods may affect reliability. VCC Power 2946 tbl 01 Capacitance (TA = +25C, f = 1.0MHz) (1) Symbol Parameter Conditions Max. Unit CIN Input Capacitance VIN = 0V 11 pF CI/O I/O Capacitance VOUT = 0V 11 pF 2946 tbl 04 NOTE: 1. This parameter is determined by device characterization, but is not production tested. 2 Aug.06.20

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory
ID4
IDT
IDT, Integrated Device Technology Inc
INTEGRATED DEVICE
INTEGRATED DEVICE TECHNOLOGY
INTEGRATED DEVICES TECH AID
Intersil
INTERSIL - FGC
Intersil(Renes as Electronics)
Intersil(Renesas Electronics)
ITS
REA
RENESAS
RENESAS (IDT)
RENESAS (INTERSIL)
Renesas / IDT
Renesas / Intersil
Renesas Electronics
Renesas Electronics America
RENESAS TECHNOLOGY
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