74FCT16374CTPVG Renesas

IDT74FCT16374AT/CT/ET FAST CMOS 16-BIT REGISTER (3-STATE) INDUSTRIAL TEMPERATURE RANGE FAST CMOS 16-BIT IDT74FCT16374AT/CT/ET REGISTER (3-STATE) FEATURES: DESCRIPTION: 0.5 MICRON CMOS Technology The FCT16374T 16-bit edge-triggered D-type register is built using High-speed, low-power CMOS replacement for ABT functions advanced dual metal CMOS technology. These high-speed, low-power Typical tSK(o) (Output Skew) < 250ps registers are ideal for use as buffer registers for data synchronization and Low input and output leakage 1A (max.) storage. The Output Enable (xOE) and clock (xCLK) controls are organized ESD > 2000V per MIL-STD-883, Method 3015 > 200V using to operate each device as two 8-bit registers or one 16-bit register with machine model (C = 200pF, R = 0) common clock. Flow-through organization of signal pins simplifies layout. All VCC = 5V 10% inputs are designed with hysteresis for improved noise margin. High drive outputs (32mA IOH, 64mA IOL) The FCT16374T is ideally suited for driving high-capacitance loads and Power off disable outputs permit live insertion low-impedance backplanes. The output buffers are designed with power off Typical VOLP (Output Ground Bounce) < 1.0V at VCC = 5V, disable capability to allowlive insertio of boards when used as backplane TA = 25C drivers. Available in the following packages: Industrial: SSOP, TSSOP FUNCTIONAL BLOCK DIAGRAM 2OE 1OE 1CLK 2CLK D 1D1 D 2D1 1O1 2O1 C C TO SEVEN OTHER CHANNELS TO SEVEN OTHER CHANNELS INDUSTRIAL TEMPERATURE RANGE MARCH 2019 1 DSC-5452/12IDT74FCT16374AT/CT/ET FAST CMOS 16-BIT REGISTER (3-STATE) INDUSTRIAL TEMPERATURE RANGE (1) PIN CONFIGURATION ABSOLUTE MAXIMUM RATINGS Symbol Description Max Unit (2) VTERM Terminal Voltage with Respect to GND 0.5 to 7 V 1 48 1CLK 1OE (3) VTERM Terminal Voltage with Respect to GND 0.5 to VCC+0.5 V 2 47 1O1 1D1 TSTG Storage Temperature 65 to +150 C IOUT DC Output Current 60 to +120 mA 3 46 1O2 1D2 NOTES: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause GND 4 45 GND permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational 5 44 1O3 1D3 sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 6 43 1O4 1D4 2. All device terminals except FCT162XXX Output and I/O terminals. 3. Outputs and I/O terminals for FCT162XXX. VCC 7 42 VCC 8 41 1O5 1D5 CAPACITANCE (TA = +25C, f = 1.0MHz) 9 40 1O6 1D6 (1) Symbol Parameter Conditions Typ. Max. Unit GND 10 39 GND CIN Input Capacitance VIN = 0V 3.5 6 pF COUT Output Capacitance VOUT = 0V 3.5 8 pF 11 38 1O7 1D7 NOTE: 12 37 1O8 1D8 1. This parameter is measured at characterization but not tested. 13 36 2O1 2D1 14 35 2O2 2D2 GND 15 34 GND PIN DESCRIPTION Pin Names Description 16 33 2O3 2D3 x D x Data Inputs 17 32 xCLK Clock Inputs 2O4 2D4 x O x 3-State Outputs VCC 18 31 VCC xOE 3-State Output Enable Input (Active LOW) 19 30 2O5 2D5 20 29 2O6 2D6 GND 21 28 GND (1) FUNCTION TABLE 22 27 2O7 2D7 Inputs Outputs 23 26 2O8 2D8 Function xDx xCLK xOE xOx ZX L H Z 24 25 2CLK 2OE XH H Z Load L LL TOP VIEW Register H LH Package Type Package Code Order Code L HZ H HZ TSSOP PAG48 PAG SSOP PVG48 PVG NOTE: 1. H = HIGH voltage level L = LOW voltage level X = Dont care Z = High-impedance = LOW-to-HIGH transition 2