DATASHEET HIP2100 FN4022 Rev.16.00 100V/2A Peak, Low Cost, High Frequency Half Bridge Driver Aug 8, 2019 The HIP2100 is a high frequency, 100V Half Bridge Features N-Channel power MOSFET driver IC. The low-side and Drives N-Channel MOSFET Half Bridge high-side gate drivers are independently controlled and matched to 8ns. This gives the user maximum flexibility in SOIC, EPSOIC, and QFN Package Options dead-time selection and driver protocol. Undervoltage SOIC and EPSOIC Packages Compliant with 100V protection on both the low-side and high-side supplies force Conductor Spacing Guidelines of IPC-2221 the outputs low. An on-chip diode eliminates the discrete Pb-Free (RoHS Compliant) diode required with other driver ICs. A new level-shifter topology yields the low-power benefits of pulsed operation Bootstrap Supply Max Voltage to 114VDC with the safety of DC operation. Unlike some competitors, On-Chip 1 Bootstrap Diode the high-side output returns to its correct state after a momentary undervoltage of the high-side supply. Fast Propagation Times for Multi-MHz Circuits Drives 1000pF Load with Rise and Fall Times Typ 10ns Applications CMOS Input Thresholds for Improved Noise Immunity Telecom Half Bridge Power Supplies Independent Inputs for Non-Half Bridge Topologies Avionics DC/DC Converters No Start-Up Problems Two-Switch Forward Converters Outputs Unaffected by Supply Glitches, HS Ringing Below Active Clamp Forward Converters Ground, or HS Slewing at High dv/dt Related Literature Low Power Consumption For a full list of related documents, visit our website: Wide Supply Range HIP2100 device page Supply Undervoltage Protection 3 Driver Output Resistance QFN Package: - Compliant to JEDEC PUB95 MO-220 QFN - Quad Flat No Leads - Package Outline - Near Chip Scale Package Footprint, which Improves PCB Efficiency and has a Thinner Profile FN4022 Rev.16.00 Page 1 of 14 Aug 8, 2019HIP2100 Ordering Information PART NUMBER PART TEMP. RANGE TAPE AND REEL PACKAGE PKG. (Notes 2, 3) MARKING (C) (Units) (Note 1) (RoHS Compliant) DWG. HIP2100IBZ 2100 IBZ -40 to +125 - 8 Ld SOIC M8.15 HIP2100IBZT 2100 IBZ -40 to +125 2.5k 8 Ld SOIC M8.15 HIP2100EIBZ 2100 EIBZ -40 to +125 - 8 Ld EPSOIC M8.15C HIP2100EIBZT 2100 EIBZ -40 to +125 2.5k 8 Ld EPSOIC M8.15C HIP2100IRZ HIP 2100IRZ -40 to +125 - 16 Ld 5x5 QFN L16.5x5 HIP2100IRZT HIP 2100IRZ -40 to +125 6k 16 Ld 5x5 QFN L16.5x5 HIP2100EVAL2 Evaluation Board NOTES: 1. See TB347 for details about reel specifications. 2. These Pb-free plastic packaged products employ special Pb-free material sets, molding compounds/die attach materials, and 100% matte tin plate plus anneal (e3 termination finish, which is RoHS compliant and compatible with both SnPb and Pb-free soldering operations). Pb-free products are MSL classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J-STD-020. 3. For Moisture Sensitivity Level (MSL), see the HIP2100 device page. For more information about MSL, see TB363. Pinouts (8 LD SOIC, EPSOIC) (16 LD QFN) TOP VIEW TOP VIEW 1 8 V LO DD 16 15 14 13 HB 2 7 V SS EPAD HO LI 3 6 NC 1 12 NC HS 4 5 HI HB 2 11 V SS EPAD EPAD = Exposed PAD. HO 3 10 LI NC NC 4 9 576 8 Pin Descriptions SYMBOL DESCRIPTION V Positive Supply to lower gate drivers. De-couple this pin to V . Bootstrap diode connected to HB. DD SS HB High-Side Bootstrap supply. External bootstrap capacitor is required. Connect positive side of bootstrap capacitor to this pin. Bootstrap diode is on-chip. HO High-Side Output. Connect to gate of High-Side power MOSFET. HS High-Side Source connection. Connect to source of High-Side power MOSFET. Connect negative side of bootstrap capacitor to this pin. HI High-Side input. LI Low-Side input. V Chip negative supply, generally will be ground. SS LO Low-Side Output. Connect to gate of Low-Side power MOSFET. EPAD Exposed Pad. Connect to ground or float. The EPAD is electrically isolated from all other pins. FN4022 Rev.16.00 Page 2 of 14 Aug 8, 2019 NC NC HS V DD HI LO NC NC