HSD88KRF-E Renesas

HSD88 Silicon Schottky Barrier Diode for Detector, Mixer REJ03G0602-0100 (Previous: ADE-208-1386) Rev.1.00 Apr 26, 2005 Features Low capacitance. (C = 0.8 pF max) Low forward voltage. Super small Flat Lead Package (SFP) is suitable for surface mount design. Ordering Information Package Code Type No. Cathode Mark (Previous Code) Package Name HSD88 S3 SFP PUSF0002ZB-A (SFP) Pin Arrangement Cathode mark Mark 12 S3 1. Cathode 2. Anode Rev.1.00 Apr 26, 2005 page 1 of 4 HSD88 Absolute Maximum Ratings (Ta = 25C) Item Symbol Value Unit Reverse voltage V 10 V R Average rectified current I 15 mA O Junction temperature Tj 125 C Storage temperature Tstg 55 to +125 C Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test Condition Forward voltage V 0.350 0.420 V I = 1 mA F1 F V 0.500 0.580 I = 10 mA F2 F Reverse current I 0.2 A V = 2 V R1 R I 10 V = 10 V R2 R Capacitance C 0.80 pF V = 0 V, f = 1 MHz R 1 ESD-Capability * 30 C = 200 pF, Both forward and reverse direction 1 pulse. Notes: 1. Failure criterion I > 0.4 A at V = 2 V R R 2. Please do not use the soldering iron due to avoid high stress to the SFP package. Rev.1.00 Apr 26, 2005 page 2 of 4