HSU276TRF-E Renesas

HSU276 Silicon Schottky Barrier Diode for Detector and Mixer REJ03G0141-0700Z (Previous: ADE-208-078F) Rev.7.00 Nov.10.2003 Features High forward current, Low capacitance. Ultra small Resin Package (URP) is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. Laser Mark Package Code HSU276 3 URP Pin Arrangement Cathode mark Mark 12 1. Cathode 2. Anode Rev.7.00, Nov.10.2003, page 1 of 4 3HSU276 Absolute Maximum Ratings (Ta = 25C) Item Symbol Value Unit Reverse voltage V 3 V R Average rectified current I 30 mA O Junction temperature Tj 125 C Storage temperature Tstg 55 to +125 C Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test Condition Reverse voltage V 3 V I = 1 mA R R Reverse current I 50 A V = 0.5 V R R Forward current I 35 mA V = 0.5 V F F Capacitance C 0.85 pF V = 0.5 V, f = 1 MHz R *1 ESD-Capability 30 V C = 200 pF, R = 0 , Both forward and reverse direction 1 pulse. Note: 1. Failure criterion I 100 A at V = 0.5 V R R Rev.7.00, Nov.10.2003, page 2 of 4