DATASHEET ISL6622A FN6601 Rev 2.00 VR11.1 Compatible Synchronous Rectified Buck MOSFET Drivers March 19, 2009 The ISL6622A is a high frequency MOSFET driver designed Features to drive upper and lower power N-Channel MOSFETs in a Dual MOSFET Drives for Synchronous Rectified Bridge synchronous rectified buck converter topology. The advanced PWM protocol of ISL6622A is specifically designed to work Advanced Adaptive Zero Shoot-Through Protection with Intersil VR11.1 controllers and combined with 36V Internal Bootstrap Schottky Diode N-Channel MOSFETs, form a complete core-voltage regulator Diode Emulation For Enhanced Light Load Efficiency solution for advanced microprocessors. When ISL6622A detects a PSI protocol sent by an Intersil VR11.1 controller, it Bootstrap Capacitor Overcharging Prevention activates Diode Emulation (DE) operation otherwise, it Supports High Switching Frequency operates in normal Continuous Conduction Mode (CCM) - 3A Sinking Current Capability PWM mode. - Fast Rise/Fall Times and Low Propagation Delays In the 8 Ld SOIC package, the ISL6622A drives the upper Advanced PWM Protocol (Patent Pending) to Support PSI gate to 12V while the lower get can be driven from 5V to 12V. Mode, Diode Emulation, Three-State Operation The 10 Ld DFN part allows for more flexibility. The upper gate can be driven from 5V to 12V using the UVCC pin and the Pre-POR Overvoltage Protection for Start-up and lower gate can also be driven from 5V to 12V using the LVCC Shutdown pin. This provides the flexibility necessary to optimize VCC Undervoltage Protection applications involving trade-offs between gate charge and Expandable Bottom Copper Pad for Enhanced Heat conduction losses. Sinking To further enhance light load efficiency, the ISL6622A Dual Flat No-Lead (DFN) Package enables diode emulation operation during PSI mode. This - Near Chip-Scale Package Footprint Improves PCB allows Discontinuous Conduction Mode (DCM) by detecting Efficiency and Thinner in Profile when the inductor current reaches zero and subsequently turning off the low side MOSFET to prevent it from sinking Pb-Free (RoHS Compliant) current. Applications An advanced adaptive shoot-through protection is integrated to prevent both the upper and lower MOSFETs from High Light Load Efficiency Voltage Regulators conducting simultaneously and to minimize dead time. The Core Regulators for Advanced Microprocessors ISL6622A has a 20k integrated high-side gate-to-source High Current DC/DC Converters resistor to prevent self turn-on due to high input bus dV/dt. This driver adds an overvoltage protection feature High Frequency and High Efficiency VRM and VRD operational while VCC is below its POR threshold the PHASE node is connected to the gate of the low side Related Literature MOSFET (LGATE) via a 10k resistor limiting the output Technical Brief TB363 Guidelines for Handling and voltage of the converter close to the gate threshold of the low Processing Moisture Sensitive Surface Mount Devices side MOSFET, dependent on the current being shunted, (SMDs) which provides some protection to the load should the upper Technical Brief TB417 Designing Stable Compensation MOSFET(s) become shorted. Networks for Single Phase Voltage Mode Buck Regulators for Power Train Design, Layout Guidelines, and Feedback Compensation Design FN6601 Rev 2.00 Page 1 of 11 March 19, 2009ISL6622A Ordering Information PART NUMBER PART TEMP. RANGE PACKAGE PKG. (Note) MARKING (C) (Pb-Free) DWG. ISL6622ACBZ* 6622A CBZ 0 to +70 8 Ld SOIC M8.15 ISL6622ACRZ* 622A 0 to +70 10 Ld 3x3 DFN L10.3x3 ISL6622AIBZ* 6622A IBZ -40 to +85 8 Ld SOIC M8.15 ISL6622AIRZ* 22AI -40 to +85 10 Ld 3x3 DFN L10.3x3 *Add -T suffix for tape and reel. Please refer to TB347 for details on reel specifications. NOTE: These Intersil Pb-free plastic packaged products employ special Pb-free material sets, molding compounds/die attach materials, and 100% matte tin plate plus anneal (e3 termination finish, which is RoHS compliant and compatible with both SnPb and Pb-free soldering operations). Intersil Pb-free products are MSL classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020. Pinouts ISL6622A ISL6622A (8 LD SOIC) (10 LD 3x3 DFN) TOP VIEW TOP VIEW UGATE 1 8 PHASE UGATE 1 10 PHASE BOOT 2 7 VCC 2 9 BOOT VCC PWM 3 6 LVCC 3 PAD 8 UVCC NC 4 7 LVCC PWM GND 4 5 LGATE LGATE 5 6 GND Block Diagrams ISL6622A UVCC BOOT UGATE 20k VCC PHASE +5V SHOOT- PRE-POR OVP THROUGH FEATURES LVCC PROTECTION 11.2k LVCC 10k PWM POR/ CONTROL LOGIC LGATE 9.6k GND UVCC = VCC FOR SOIC FN6601 Rev 2.00 Page 2 of 11 March 19, 2009