ISL95808IRZ-T Renesas

DATASHEET ISL95808 FN8689 Rev 2.00 High Voltage Synchronous Rectified Buck MOSFET Driver May 25, 2016 The ISL95808 is a high frequency, dual MOSFET driver with low Features shutdown current, optimized to drive two N-Channel power Dual MOSFET drivers for synchronous rectified bridge MOSFETs in a synchronous-rectified buck converter topology. It is especially suited for mobile computing applications that Adaptive shoot-through protection require high efficiency and excellent thermal performance. The 0.5 ON-resistance and 4A sink current capability driver, combined with an Intersil multiphase Buck PWM Supports high switching frequency up to 2MHz controller, forms a complete single-stage core-voltage - Fast output rise and fall time regulator solution for advanced mobile microprocessors. - Low propagation delay The ISL95808 features a 4A typical sinking current for the Three-state PWM input for power stage shutdown lower gate driver. This current is capable of holding the lower MOSFET gate off during the rising edge of the phase node. This Internal bootstrap Schottky diode prevents shoot-through power loss caused by the high dv/dt of Low shutdown supply current (5V, 3A) phase voltages. The operating voltage matches the 30V Diode emulation for enhanced light-load efficiency and breakdown voltage of the MOSFETs commonly used in mobile prebiased start-up applications computer power supplies. VCC POR (Power-On Reset) feature integrated The ISL95808 also features a three-state PWM input. This Low three-state shutdown hold-off time (typical 160ns) PWM input, working together with Intersils multiphase PWM controllers, will prevent negative voltage output during CPU DFN package shutdown. This feature eliminates a protective Schottky diode Pb-free (RoHS compliant) usually seen in microprocessor power systems. MOSFET gates can be efficiently switched up to 2MHz using Applications the ISL95808. Each driver is capable of driving a 3000pF load Core voltage supplies for Intel and AMD mobile with propagation delays of 8ns and transition times under microprocessors 10ns. Bootstrapping is implemented with an internal Schottky High frequency low profile DC/DC converters diode. This reduces system cost and complexity, while allowing for the use of higher performance MOSFETs. Adaptive High current low output voltage DC/DC converters shoot--through protection is integrated to prevent both High input voltage DC/DC converters MOSFETs from conducting simultaneously. A diode emulation feature is integrated in the ISL95808 to Related Literature enhance converter efficiency at light load conditions. This TB389, PCB Land Pattern Design and Surface Mount feature also allows for monotonic start-up into prebiased Guidelines for MLFP Packages outputs. When diode emulation is enabled, the driver will allow discontinuous conduction mode by detecting when the TB447, Guidelines for Preventing Boot-to-Phase Stress on inductor current reaches zero and subsequently turning off the Half-Bridge MOSFET Driver ICs low-side MOSFET gate. The ISL95808 also features very low shutdown supply current (5V, 3A) to ensure the low power consumption. VCC BOOT FCCM UGATE PHASE SHOOT- THROUGH PROTECTION VCC CONTROL PWM LOGIC 10k LGATE GND THERMAL PAD FIGURE 1. BLOCK DIAGRAM FN8689 Rev 2.00 Page 1 of 9 May 25, 2016ISL95808 Ordering Information PART NUMBER PART TEMP. RANGE TAPE AND REEL PACKAGE PKG. (Notes 1, 2, 3) MARKING (C) (UNITS) (RoHS Compliant) DWG. # ISL95808HRZ-T 08 -10 to +100 6k 8 Ld 2x2 DFN L8.2x2D ISL95808IRZ-T 08I -40 to +100 6k 8 Ld 2x2 DFN L8.2x2D NOTES: 1. Please refer to TB347 for details on reel specifications. 2. These Intersil Pb-free plastic packaged products employ special Pb-free material sets, molding compounds/die attach materials, and 100% matte tin plate plus anneal (e3 termination finish, which is RoHS compliant and compatible with both SnPb and Pb-free soldering operations). Intersil Pb- free products are MSL classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020. 3. For Moisture Sensitivity Level (MSL), please see product information page for ISL95808. For more information on MSL, please see tech brief TB363. Pin Configuration ISL95808 (8 LD 2x2 DFN) TOP VIEW 6 UGATE 1 8 PHASE 2 BOOT 7 FCCM 6 PWM 3 6 VCC 4 GND 5 LGATE Pin Descriptions PIN NUMBER PIN NAME DESCRIPTION 1 UGATE The UGATE pin is the upper gate drive output. Connect to the gate of high-side power N-Channel MOSFET. 2 BOOT BOOT is the floating bootstrap supply pin for the upper gate drive. Connect the bootstrap capacitor between this pin and the PHASE pin. The bootstrap capacitor provides the charge to turn on the upper MOSFET. See Internal Bootstrap Diode on page 7 for guidance in choosing the appropriate capacitor value. 3 PWM The PWM signal is the control input for the driver. The PWM signal can enter three distinct states during operation. See Three-State PWM Input on page 6 for further details. Connect this pin to the PWM output of the controller. 4 GND GND is the ground pin for the IC. 5 LGATE LGATE is the lower gate drive output. Connect to gate of the low-side power N-Channel MOSFET. 6 VCC Connect the VCC pin to a +5V bias supply. Place a high quality bypass capacitor from this pin to GND. The VCC pin of the driver(s) and related VCC or +5V bias supply pin of the Intersil controller must share a common +5V supply. 7 FCCM The FCCM pin enables or disables diode emulation. When FCCM is LOW, diode emulation is allowed. When FCCM is HIGH, continuous conduction mode is forced. See Diode Emulation on page 6 for more detail. High impedance on the input of FCCM will shut down ISL95808. 8 PHASE Connect the PHASE pin to the source of the upper MOSFET and the drain of the lower MOSFET. This pin provides a return path for the upper gate driver. FN8689 Rev 2.00 Page 2 of 9 May 25, 2016