IDTQS33X257 HIGH-SPEED CMOS QUICKSWITCH 24:12 MUX/DEMUX INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS IDTQS33X257 HIGH-SPEED CMOS QUICKSWITCH 24:12 MUX/DEMUX FEATURES: DESCRIPTION: Enhanced N channel FET with no inherent diode to Vcc The QS33X257 is a high-speed CMOS TTL-compatible 24:12 multi- Bidirectional signal flow plexer/demultiplexer. The QS33X257 is functionally compatible to three of 24:12 Mux/Demux switches connect inputs to outputs the QuickSwitch version of the 74F257, 74FCT257, and the 74ALS/AS/ Individual controls for each bank LS257 Quad 2:1 multiplexers. The low ON resistance of the QS33X257 Zero propagation delay, zero ground bounce allows inputs to be connected to outputs without adding propagation delay Undershoot clamp diodes on all switch and control inputs and without generating additional ground bounce noise. This part will be TTL-compatible control inputs used in wide bus multiplexing where board space is at a premium. Available in 48-pin QVSOP package Mux/Demux devices provide an order of magnitude faster speed than equivalent logic devices. The QS33X257 is characterized for operation at -40C to +85C. APPLICATIONS: Logic replacement Video, audio, graphics switching, muxing Hot-swapping, hot-docking Voltage translation (5V to 3.3V) Bus funneling FUNCTIONAL BLOCK DIAGRAM S0 S2 E0 E2 I0A I0I YA YI I1 A I1I I0B I0 J YB Y J I1B I1J I0C I0K YC Y K I1C I1K I0D L I0 YD Y L I1D I1L S1 E1 I0E Y E I1E I0 F Y F I1F I0 G Y G I1G I0H Y H I1H The IDT logo is a registered trademark of Integrated Device Technology, Inc. INDUSTRIAL TEMPERATURE RANGE AUGUST 2012 1 c 2012 Integrated Device Technology, Inc. DSC-5763/3IDTQS33X257 HIGH-SPEED CMOS QUICKSWITCH 24:12 MUX/DEMUX INDUSTRIAL TEMPERATURE RANGE (1) PIN CONFIGURATION ABSOLUTE MAXIMUM RATINGS Symbol Description Max Unit (2) VTERM Supply Voltage to Ground 0.5 to +7 V S0 1 48 VCC (3) VTERM DC Switch Voltage Vs 0.5 to +7 V I0A 2 E0 (3) 47 VTERM DC Input Voltage VIN 0.5 to +7 V VAC AC Input Voltage (pulse width 20ns) 3 V I1A 3 46 I0D IOUT DC Output Current Max. Sink Current/Pin 120 mA 4 45 YA I1D PMAX Maximum Power Dissipation 0.5 W I0B 5 44 YD TSTG Storage Temperature 65 to +150 C I1B 6 43 I0C NOTE: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause YB 7 42 I1C permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational GND 8 41 YC sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. S1 9 40 VCC 2. Vcc terminals. 3. All terminals except Vcc. I0E 10 E1 39 I1E 11 38 I0H CAPACITANCE YE 12 37 I1H (TA = +25C, f = 1.0MHZ, VIN = 0V, VOUT = 0V) I0F 13 36 YH (1) Pins Typ. Max. Unit I1F 14 35 I0G Control Pins 4 5 pF 15 YF 34 I1G Quickswitch Channels Demux 5 7 pF GND 16 33 (Switch OFF) Mux 9 10 YG NOTE: S2 17 32 VCC 1. This parameter is measured at characterization but not tested. I0I 18 31 E2 I1I 19 30 I0L PIN DESCRIPTION YI 20 29 I1L Pin Names I/O Description I0J 21 28 YL I x x I/O Data Inputs I1J 22 27 S x I Select Input I0K Ex I/O Enable Input YJ 23 26 I1K Y x I/O Data Outputs GND 24 25 YK QVSOP TOP VIEW (1) FUNCTION TABLE Enable Outputs Ex Sx YA YB YC YD Function H X Z Z Z Z Disable LL I0A I0B I0C I0X Select 0 LH I1A I1B I1C I1X Select 1 NOTE: 1. H = HIGH Voltage Level L = LOW Voltage Level X = Don t Care Z = High-Impedance 2