QS34X245Q3G Renesas

IDTQS34X245 HIGH-SPEED CMOS QUICKSWITCH 32-BIT MULTIWIDTH BUS SWITCHES INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS IDTQS34X245 HIGH-SPEED CMOS QUICKSWITCH 32-BIT MULTIWIDTH BUS SWITCHES DESCRIPTION: FEATURES: TM Enhanced N channel FET with no inherent diode to Vcc The QS34X245 is a member of the MultiWidth family of QuickSwitch Bidirectional switches connect inputs to outputs devices and provides a set of 32 high-speed CMOS compatible bus switches Zero propagation delay, zero ground bounce in a flow-through pinout. This device is available in the MilliPaQ package, QS34X245 is 32-bit version of QS3245 the world s first small outline 32-bit solution. The low ON-resistance of the Flow-through pinout for easy layout QS34X245 allows inputs to be connected to outputs without adding propa- Undershoot clamp diodes on all switch and control inputs gation delay and without generating additional ground bounce noise. When TTL-compatible control inputs Output Enable (OEn) is low, the switches are turned on, connecting bus A Available in 80-pin MilliPaQ package to bus B. When OEn is high, the switches are turned off. This device is ideally suited for 32/64 bit applications where board space is at a premium. QuickSwitch devices provide speeds an order of magnitude faster than conventional logic devices. APPLICATIONS: The QS34X245 is characterized for operation at -40C to +85C. Hot-swapping, hot-docking Voltage translation (5V to 3.3V) Bus switching and isolation Power conservation Logic replacement (data processing) Capacitance isolation Clock gating FUNCTIONAL BLOCK DIAGRAM A7 A0 A1 A2 A3 A4 A5 A6 A23 A16 A17 A18 A19 A20 A21 A22 OE3 OE1 B0 B1 B2 B3 B4 B5 B6 B7 B16 B17 B18 B19 B20 B21 B22 B23 A12 A8 A9 A10 A11 A13 A14 A15 A24 A25 A26 A27 A28 A29 A30 A31 OE4 OE2 B8 B9 B10 B11 B12 B13 B14 B15 B24 B25 B26 B27 B28 B29 B30 B31 The IDT logo is a registered trademark of Integrated Device Technology, Inc. INDUSTRIAL TEMPERATURE RANGE AUGUST 2012 1 c 2012 Integrated Device Technology, Inc. DSC-5481/5IDTQS34X245 HIGH-SPEED CMOS QUICKSWITCH 32-BIT MULTIWIDTH BUS SWITCHES INDUSTRIAL TEMPERATURE RANGE (1) PIN CONFIGURATION ABSOLUTE MAXIMUM RATINGS Symbol Description Max Unit NC 1 80 VCC (2) VTERM Supply Voltage to Ground 0.5 to +7 V A0 OE1 (3) 79 2 VTERM DC Switch Voltage Vs 0.5 to +7 V A1 (3) B0 3 78 VTERM DC Input Voltage VIN 0.5 to +7 V A2 B1 VAC AC Input Voltage (pulse width 20ns) 3 V 4 77 IOUT DC Output Current 120 mA A3 B2 5 76 PMAX Maximum Power Dissipation (TA =70C) 1.4 W A4 B3 6 75 TSTG Storage Temperature 65 to +150 C A5 7 74 B4 NOTE: A6 8 73 B5 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause A7 9 72 B6 permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational GND 10 71 B7 sections of this specification is not implied. Exposure to absolute maximum rating 11 VCC NC 70 conditions for extended periods may affect reliability. 2. Vcc terminals. A8 12 OE2 69 3. All terminals except Vcc. A9 13 68 B8 A10 14 67 B9 A11 15 66 B10 A12 16 65 B11 A13 17 B12 64 A14 18 B13 63 CAPACITANCE A15 19 B14 62 (TA = +25C, f = 1.0MHZ, VIN = 0V, VOUT = 0V) GND 20 61 B15 (1) Pins Typ. Max. Unit VCC NC 21 60 Control Pins 3 4 pF A16 22 OE3 Quickswitch Channels (Switch OFF) 7 8 pF 59 A17 23 B16 58 NOTE: A18 1. This parameter is measured at characterization but not tested. 24 B17 57 A19 25 56 B18 A20 26 55 B19 A21 27 54 B20 A22 28 53 B21 A23 29 52 B22 PIN DESCRIPTION GND 30 51 B23 Pin Names Description NC 31 VCC 50 OEn Output Enable A24 32 OE4 49 An Data I/Os A25 33 B24 48 Bn Data I/Os A26 34 B25 47 A27 35 B26 46 A28 36 B27 45 (1) FUNCTION TABLE A29 37 B28 44 OEn Function A30 38 43 B29 H Disconnected A31 39 42 B30 L An = Bn 40 GND 41 B31 NOTE: 1. H = HIGH Voltage Level L = LOW Voltage Level MILLIPAQ TOP VIEW 2