R1LV1616HSA-4SI#B0 Renesas

R1LV1616HSA-I Series Wide Temperature Range Version 16 M SRAM (1-Mword 16-bit / 2-Mword 8-bit) REJ03C0195-0102 Rev. 1.02 Feb.23.2017 Description The R1LV1616HSA-I Series is 16-Mbit static RAM organized 1-Mword 16-bit / 2-Mword 8-bit with embedded ECC. R1LV1616HSA-I Series has realized higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell). It offers low power standby power dissipation therefore, it is suitable for battery backup systems. It is packaged in 48-pin plastic TSOPI for high density surface mounting. Features Single 3.0 V supply: 2.7 V to 3.6 V Fast access time: 45/55 ns (max) Power dissipation: Active: 9 mW/MHz (typ) Standby: 1.5 W (typ) Completely static memory. No clock or timing strobe required Equal access and cycle times Common data input and output. Three state output Battery backup operation. 2 chip selection for battery backup Temperature range: 40 to +85C Byte function (x8 mode) available by BYTE & A-1 Embedded ECC (error checking and correction) for single-bit error correction Rev.1.02, Feb.23.2017, page 1 of 19 R1LV1616HSA-I Series Ordering Information Type No. Access time Package R1LV1616HSA-4SI 45 ns 48-pin plastic TSOPI R1LV1616HSA-5SI 55 ns Rev.1.02, Feb.23.2017, page 2 of 19