R1RW0416DSB-2PI#D0 Renesas

Datasheet R1RW0416DI Series REJ03C0109-0201 Wide Temperature Range Version Rev.2.01 4M High Speed SRAM (256-kword 16-bit) Jun 16, 2010 Description The R1RW0416DI is a 4-Mbit high speed static RAM organized 256-kword 16-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology. It is most appropriate for the application which requires high speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. The R1RW0416DI is packaged in 400-mil 44-pin SOJ and 400-mil 44-pin plastic TSOPII for high density surface mounting. Features Single 3.3 V supply: 3.3 V 0.3 V Access time: 10ns/12 ns (max) Completely static memory No clock or timing strobe required Equal access and cycle times Directly TTL compatible All inputs and outputs Operating current: 145/130 mA (max) TTL standby current: 40 mA (max) CMOS standby current: 5 mA (max) Center V and V type pin out CC SS Temperature range: 40 to +85C Ordering Information Type No. Access time Package R1RW0416DGE-0PI 10ns 400-mil 44-pin plastic SOJ (44P0K) R1RW0416DGE-2PI 12 ns R1RW0416DSB-0PI 10 ns 400-mil 44-pin plastic TSOPII (44P3W-H) R1RW0416DSB-2PI 12 ns REJ03C0109-0201 Rev.2.01 Page 1 of 11 Jun 16, 2010 R1RW0416DI Series Pin Arrangement Pin Description Pin name Function A0 to A17 Address input I/O1 to I/O16 Data input/output CS Chip select OE Output enable WE Write enable UB Upper byte select LB Lower byte select V Power supply CC V Ground SS NC No connection REJ03C0109-0201 Rev.2.01 Page 2 of 11 Jun 16, 2010