X-On Electronics has gained recognition as a prominent supplier of CY62126ESL-45ZSXA SRAM across the USA, India, Europe, Australia, and various other global locations. CY62126ESL-45ZSXA SRAM are a product manufactured by Infineon. We provide cost-effective solutions for SRAM, ensuring timely deliveries around the world.

CY62126ESL-45ZSXA Infineon

CY62126ESL-45ZSXA electronic component of Infineon
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Part No.CY62126ESL-45ZSXA
Manufacturer: Infineon
Category: SRAM
Description: SRAM 1024Kb 45ns 64K x 16 LP SRAM
Datasheet: CY62126ESL-45ZSXA Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 5.1698
10 : USD 4.7263
25 : USD 4.6362
50 : USD 4.6085
100 : USD 4.1692
250 : USD 4.1692
500 : USD 4.1692
1000 : USD 4.1692
2000 : USD 4.1692
N/A

Obsolete
   
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RoHS - XON
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Cnhts
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Mxhts
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We are delighted to provide the CY62126ESL-45ZSXA from our SRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CY62126ESL-45ZSXA and other electronic components in the SRAM category and beyond.

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CY62126ESL MoBL Automotive 1-Mbit (64 K 16) Static RAM 1-Mbit (64 K 16) Static RAM applications such as cellular telephones. The device also has an Features automatic power down feature that significantly reduces power consumption when addresses are not toggling. Placing the Very high speed: 45 ns device into standby mode reduces power consumption by more Wide voltage range: 2.2 V to 3.6 V and 4.5 V to 5.5 V than 99 percent when deselected (CE HIGH). The input and output pins (I/O through I/O ) are placed in a high impedance 0 15 Ultra low standby power state when the device is deselected (CE HIGH), the outputs are Typical standby current: 1 A disabled (OE HIGH), both Byte High Enable and Byte Low Maximum standby current: 4 A Enable are disabled (BHE, BLE HIGH) or during a write operation (CE LOW and WE LOW). Ultra low active power Typical active current: 1.3 mA at f = 1 MHz To write to the device, take Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data Easy memory expansion with CE, and OE features from I/O pins (I/O through I/O ) is written into the location 0 7 Automatic power down when deselected specified on the address pins (A through A ). If Byte High 0 15 Enable (BHE) is LOW, then data from I/O pins (I/O through 8 Complementary metal oxide semiconductor (CMOS) for I/O ) is written into the location specified on the address pins 15 optimum speed and power (A through A ). 0 15 Available in Pb-free 44-Pin thin small outline package (TSOP) II To read from the device, take Chip Enable (CE) and Output package Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then data from the memory Functional Description location specified by the address pins appear on I/O to I/O . If 0 7 Byte High Enable (BHE) is LOW, then data from memory The CY62126ESL is a high performance CMOS static RAM appears on I/O to I/O . See the Truth Table on page 11 for a 8 15 organized as 64K words by 16 bits. This device features complete description of read and write modes. advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life (MoBL ) in portable Logic Block Diagram DATA IN DRIVERS A 10 A 9 A 8 A 7 A 64K x 16 6 A 5 I/O I/O RAM Array 0 7 A 4 A 3 I/O I/O 8 15 A 2 A 1 A 0 COLUMN DECODER BHE WE CE OE BLE Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 001-66522 Rev. *B Revised November 29, 2014 ROW DECODER A 11 A 12 A 13 A 14 A 15 SENSE AMPS CY62126ESL MoBL Automotive Contents Pin Configuration .............................................................3 Ordering Information ...................................................... 12 Product Portfolio ..............................................................3 Ordering Code Definitions ......................................... 12 Maximum Ratings .............................................................4 Package Diagram ............................................................ 13 Operating Range ...............................................................4 Acronyms ........................................................................14 Electrical Characteristics .................................................4 Document Conventions ................................................. 14 Capacitance ......................................................................5 Units of Measure ....................................................... 14 Thermal Resistance ..........................................................5 Document History Page ................................................. 15 AC Test Loads and Waveforms .......................................5 Sales, Solutions, and Legal Information ...................... 16 Data Retention Characteristics .......................................6 Worldwide Sales and Design Support ....................... 16 Data Retention Waveform ................................................6 Products ....................................................................16 Switching Characteristics ................................................7 PSoC Solutions ...................................................... 16 Switching Waveforms ......................................................8 Cypress Developer Community ................................. 16 Truth Table ......................................................................11 Technical Support ..................................................... 16 Document Number: 001-66522 Rev. *B Page 2 of 16

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory
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INTERNATIONAL RECTIFIER
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