RMLV0816BGSB - 4S2 8Mb Advanced LPSRAM (512k word 16bit) R10DS0231EJ0200 Rev.2.00 2015.06.26 Description The RMLV0816BGSB is a family of 8-Mbit static RAMs organized 524,288-word 16-bit, fabricated by Renesass high-performance Advanced LPSRAM technologies. The RMLV0816BGSB has realized higher density, higher performance and low power consumption. The RMLV0816BGSB offers low power standby power dissipation therefore, it is suitable for battery backup systems. It is offered in 44pin TSOP (II). Features Single 3V supply: 2.4V to 3.6V Access time: Power supply voltage from 2.7V to 3.6V: 45ns (max.) Power supply voltage from 2.4V to 2.7V: 55ns (max.) Current consumption: Standby: 0.45A (typ.) Equal access and cycle times Common data input and output Three state output Directly TTL compatible All inputs and outputs Battery backup operation Part Name Information Temperature Part Name Power supply Access time Package Range 2.7V to 3.6V 45 ns RMLV0816BGSB-4S2 -40 ~ +85C 11.76mm18.41mm 44pin plastic TSOP(II) 2.4V to 2.7V 55 ns R10DS0231EJ0200 Rev.2.00 Page 1 of 12 2015.06.26 RMLV0816BGSB - 4S2 Pin Arrangement 44pin TSOP(II) A4 44 A5 1 A3 43 A6 2 A2 42 A7 3 A1 41 OE 4 A0 40 UB 5 CS 39 LB 6 DQ0 38 DQ15 7 DQ1 37 DQ14 8 DQ2 36 DQ13 9 DQ3 35 DQ12 10 Vcc 34 Vss 11 Vss 33 Vcc 12 DQ4 32 DQ11 13 DQ5 31 DQ10 14 DQ6 30 DQ9 15 DQ7 29 DQ8 16 WE 28 A8 17 A18 27 A9 18 A17 26 A10 19 A16 25 A11 20 A15 24 A12 21 A14 23 A13 22 (Top view) Pin Description Pin name Function V Power supply CC V Ground SS A0 to A18 Address input DQ0 to DQ15 Data input/output CS Chip select OE Output enable WE Write enable LB Lower byte select UB Upper byte select R10DS0231EJ0200 Rev.2.00 Page 2 of 12 2015.06.26