Preliminary Datasheet RQJ0203WGDQA R07DS0292EJ0400 (Previous: REJ03G1319-0300) Silicon P Channel MOS FET Rev.4.00 Power Switching Mar 28, 2011 Features Low on-resistance R = 142 m typ (V = 4.5 V, I = 1.1 A) DS(on) GS D Low drive current High speed switching 2.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 D 3 G 1. Source 2 2. Gate 1 3. Drain 2 S 1 Note: Marking is WG. Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Drain to source voltage V 20 V DSS Gate to source voltage V +8 / 12 V GSS Drain current I 2.1 A D Note1 Drain peak current I 6.0 A D(pulse) Body - drain diode reverse drain current I 2.1 A DR Note2 Channel dissipation Pch 0.8 W Channel temperature Tch 150 C Storage temperature Tstg 55 to +150 C Notes: 1. PW 10 s, duty cycle 1% 2. When using the glass epoxy board (FR-4: 40 x 40 x 1 mm) R07DS0292EJ0400 Rev.4.00 Page 1 of 6 Mar 28, 2011 RQJ0203WGDQA Preliminary Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test conditions Drain to source breakdown voltage V 20 V I = 10 mA, V = 0 (BR)DSS D GS Gate to source breakdown voltage V +8 V I = +100 A, V = 0 (BR)GSS G DS V 12 V I = 100 A, V = 0 (BR)GSS G DS Gate to source leak current I +10 A V = +6 V, V = 0 GSS GS DS I 10 A V = 10 V, V = 0 GSS GS DS Drain to source leak current I 1 A V = 20 V, V = 0 DSS DS GS Gate to source cutoff voltage V 0.4 1.4 V V = 10 V, I = 1 mA GS(off) DS D Note3 Drain to source on state resistance R 142 180 m I = 1.1 A, V = 4.5 V DS(on) D GS Note3 R 216 300 m I = 1.1 A, V = 2.5 V DS(on) D GS Note3 Forward transfer admittance y 2.0 2.8 S I = 1.1 A, V = 10 V fs D DS Input capacitance Ciss 205 pF V = 10 V DS V = 0 GS Output capacitance Coss 57 pF f = 1 MHz Reverse transfer capacitance Crss 39 pF Turn - on delay time t 14 ns I = 1.1 A d(on) D V = 4.5 V Rise time t 36 ns GS r R = 9 L Turn - off delay time t 29 ns d(off) Rg = 4.7 Fall time t 9 ns f Total gate charge Qg 2.6 nC V = 10 V DD V = 4.5 V Gate to source charge Qgs 0.4 nC GS I = 2.1A D Gate to drain charge Qgd 1.1 nC Note3 Body - drain diode forward voltage V 0.85 1.1 V I = 2.1 A, V = 0 DF F GS Notes: 3. Pulse test R07DS0292EJ0400 Rev.4.00 Page 2 of 6 Mar 28, 2011