X-On Electronics has gained recognition as a prominent supplier of RQJ0203WGDQA#H6 MOSFETs across the USA, India, Europe, Australia, and various other global locations. RQJ0203WGDQA#H6 MOSFETs are a product manufactured by Renesas. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RQJ0203WGDQA#H6 Renesas

RQJ0203WGDQA#H6 electronic component of Renesas
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Part No.RQJ0203WGDQA#H6
Manufacturer: Renesas
Category: MOSFETs
Description: MOSFET, P CH, 20V, 2.1A, SC-59A
Datasheet: RQJ0203WGDQA#H6 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.3733 ea
Line Total: USD 1.87 
Availability - 0
MOQ: 5  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 5
Multiples : 1
5 : USD 0.3733
10 : USD 0.2958
100 : USD 0.2279
500 : USD 0.2021
1000 : USD 0.172
5000 : USD 0.1588

   
Manufacturer
Product Category
Transistor Polarity
Brand
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No. Of Pins
Operating Temperature Max
Msl
Svhc
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RQJ0203WGDQA#H6 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RQJ0203WGDQA#H6 and other electronic components in the MOSFETs category and beyond.

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Preliminary Datasheet RQJ0203WGDQA R07DS0292EJ0400 (Previous: REJ03G1319-0300) Silicon P Channel MOS FET Rev.4.00 Power Switching Mar 28, 2011 Features Low on-resistance R = 142 m typ (V = 4.5 V, I = 1.1 A) DS(on) GS D Low drive current High speed switching 2.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 D 3 G 1. Source 2 2. Gate 1 3. Drain 2 S 1 Note: Marking is WG. Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Drain to source voltage V 20 V DSS Gate to source voltage V +8 / 12 V GSS Drain current I 2.1 A D Note1 Drain peak current I 6.0 A D(pulse) Body - drain diode reverse drain current I 2.1 A DR Note2 Channel dissipation Pch 0.8 W Channel temperature Tch 150 C Storage temperature Tstg 55 to +150 C Notes: 1. PW 10 s, duty cycle 1% 2. When using the glass epoxy board (FR-4: 40 x 40 x 1 mm) R07DS0292EJ0400 Rev.4.00 Page 1 of 6 Mar 28, 2011 RQJ0203WGDQA Preliminary Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test conditions Drain to source breakdown voltage V 20 V I = 10 mA, V = 0 (BR)DSS D GS Gate to source breakdown voltage V +8 V I = +100 A, V = 0 (BR)GSS G DS V 12 V I = 100 A, V = 0 (BR)GSS G DS Gate to source leak current I +10 A V = +6 V, V = 0 GSS GS DS I 10 A V = 10 V, V = 0 GSS GS DS Drain to source leak current I 1 A V = 20 V, V = 0 DSS DS GS Gate to source cutoff voltage V 0.4 1.4 V V = 10 V, I = 1 mA GS(off) DS D Note3 Drain to source on state resistance R 142 180 m I = 1.1 A, V = 4.5 V DS(on) D GS Note3 R 216 300 m I = 1.1 A, V = 2.5 V DS(on) D GS Note3 Forward transfer admittance y 2.0 2.8 S I = 1.1 A, V = 10 V fs D DS Input capacitance Ciss 205 pF V = 10 V DS V = 0 GS Output capacitance Coss 57 pF f = 1 MHz Reverse transfer capacitance Crss 39 pF Turn - on delay time t 14 ns I = 1.1 A d(on) D V = 4.5 V Rise time t 36 ns GS r R = 9 L Turn - off delay time t 29 ns d(off) Rg = 4.7 Fall time t 9 ns f Total gate charge Qg 2.6 nC V = 10 V DD V = 4.5 V Gate to source charge Qgs 0.4 nC GS I = 2.1A D Gate to drain charge Qgd 1.1 nC Note3 Body - drain diode forward voltage V 0.85 1.1 V I = 2.1 A, V = 0 DF F GS Notes: 3. Pulse test R07DS0292EJ0400 Rev.4.00 Page 2 of 6 Mar 28, 2011

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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