X-On Electronics has gained recognition as a prominent supplier of 2SA1577T106R Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SA1577T106R Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SA1577T106R ROHM

2SA1577T106R electronic component of ROHM
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See Product Specifications
Part No.2SA1577T106R
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor PNP 32 V 500 mA 200MHz 200 mW Surface Mount UMT3
Datasheet: 2SA1577T106R Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.1947 ea
Line Total: USD 0.19 
Availability - 22822
Ship by Fri. 29 Nov to Tue. 03 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
22822
Ship by Fri. 29 Nov to Tue. 03 Dec
MOQ : 1
Multiples : 1
1 : USD 0.1947
10 : USD 0.1331
100 : USD 0.0704
1000 : USD 0.0638
3000 : USD 0.0418
9000 : USD 0.0407

4915
Ship by Tue. 03 Dec to Mon. 09 Dec
MOQ : 326
Multiples : 1
326 : USD 0.1249
500 : USD 0.1142
1000 : USD 0.1092
2000 : USD 0.1035
3000 : USD 0.0592

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2SA1577T106R from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SA1577T106R and other electronic components in the Bipolar Transistors - BJT category and beyond.

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2SA1577 Datasheet Medium Power Transistor (-32V, -500mA) llOutline Parameter Value UMT3 V -32V CEO I -500mA C SOT-323 SC-70 llFeatures 1)Large I . llInner circuit C I =-500mA CMAX 2)Low V . Ideal for low-voltage operation. CE(sat) 3)Complements the 2SC4097. llApplication GENERAL PURPOSE SMALL SIGNAL AMPLIFIER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) 2SA1577 UMT3 2021 T106 180 8 3000 H www.rohm.com 1/6 20150730 - Rev.002 2015 ROHM Co., Ltd. All rights reserved. 2SA1577 Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage -40 V CBO V Collector-emitter voltage -32 V CEO V Emitter-base voltage -5 V EBO I Collector current -500 mA C *1 Power dissipation P 200 mW D Junction temperature T 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = -100A -40 - - V CBO C voltage Collector-emitter breakdown BV I = -1mA -32 - - V CEO C voltage BV Emitter-base breakdown voltage I = -100A -5 - - V EBO E Collector cut-off current I V = -20V - - -1.0 A CBO CB Emitter cut-off current I V = -4V - - -1.0 A EBO EB Collector-emitter saturation voltage V I = -300mA, I = -30mA - - -600 mV CE(sat) C B DC current gain h V = -3V, I = -10mA 120 - 390 - FE CE C V = -5V, I = 20mA, CE E f Transition frequency - 200 - MHz T f = 100MHz V = -10V, I = 0A, CB E C Output capacitance - 7.0 - pF ob f = 1MHz hFE values are calssified as follows : rank Q R - - - h 120-270 180-390 - - - FE *1 Each terminal mounted on a reference land. www.rohm.com 2/6 2015 ROHM Co., Ltd. All rights reserved. 20150730 - Rev.002

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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